產品詳細資料

Package name USON Peak pulse power (8/20 μs) (max) (W) 45 Vrwm (V) 5.5 Bi-/uni-directional Uni-Directional Number of channels 4 IO capacitance (typ) (pF) 0.8 IEC 61000-4-2 contact (±V) 8000 IEC 61000-4-5 (A) 5 Features ESD Protection Clamping voltage (V) 8 Dynamic resistance (typ) 0.6 Interface type USB 3.0 Breakdown voltage (min) (V) 7 IO leakage current (max) (nA) 100 Rating Catalog Operating temperature range (°C) -40 to 85
Package name USON Peak pulse power (8/20 μs) (max) (W) 45 Vrwm (V) 5.5 Bi-/uni-directional Uni-Directional Number of channels 4 IO capacitance (typ) (pF) 0.8 IEC 61000-4-2 contact (±V) 8000 IEC 61000-4-5 (A) 5 Features ESD Protection Clamping voltage (V) 8 Dynamic resistance (typ) 0.6 Interface type USB 3.0 Breakdown voltage (min) (V) 7 IO leakage current (max) (nA) 100 Rating Catalog Operating temperature range (°C) -40 to 85
USON (DQA) 10 2.5 mm² 2.5 x 1
  • Supports USB 3.0 data rates (5 Gbps)
  • IEC 61000-4-2 ESD protection (level 4 contact)
  • IEC 61000-4-5 surge protection
    • 5 A (8/20 µs)
  • Low capacitance
    • DRT: 0.7 pF (typical)
    • DQA: 0.8 pF (typical)
  • Dynamic resistance: 0.6 Ω (typical)
  • Space-saving DRT, DQA packages
  • Flow-through pin mapping
  • Supports USB 3.0 data rates (5 Gbps)
  • IEC 61000-4-2 ESD protection (level 4 contact)
  • IEC 61000-4-5 surge protection
    • 5 A (8/20 µs)
  • Low capacitance
    • DRT: 0.7 pF (typical)
    • DQA: 0.8 pF (typical)
  • Dynamic resistance: 0.6 Ω (typical)
  • Space-saving DRT, DQA packages
  • Flow-through pin mapping

The TPD2EUSB30, TPD2EUSB30A, and TPD4EUSB30 are 2 and 4 channel Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode arrays. The TPDxEUSB30/A devices are rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Contact). These devices also offer 5 A (8/20 µs) peak pulse current ratings per IEC 61000-4-5 (Surge) specification.

The TPD2EUSB30A offers low 4.5-V DC break-down voltage. The low capacitance, low break-down voltage, and low dynamic resistance make the TPD2EUSB30A a superior protection device for high-speed differential IOs.

The TPD2EUSB30 and TPD2EUSB30A are offered in space saving DRT (1 mm × 1 mm) package. The TPD4EUSB30 is offered in space saving DQA (2.5 mm × 1.0 mm) package.

The TPD2EUSB30, TPD2EUSB30A, and TPD4EUSB30 are 2 and 4 channel Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode arrays. The TPDxEUSB30/A devices are rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Contact). These devices also offer 5 A (8/20 µs) peak pulse current ratings per IEC 61000-4-5 (Surge) specification.

The TPD2EUSB30A offers low 4.5-V DC break-down voltage. The low capacitance, low break-down voltage, and low dynamic resistance make the TPD2EUSB30A a superior protection device for high-speed differential IOs.

The TPD2EUSB30 and TPD2EUSB30A are offered in space saving DRT (1 mm × 1 mm) package. The TPD4EUSB30 is offered in space saving DQA (2.5 mm × 1.0 mm) package.

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類型 標題 日期
* Data sheet TPDxEUSB30 2-, 4-Channel ESD Protection for Super-Speed USB 3.0 Interface datasheet (Rev. G) PDF | HTML 2021年 6月 1日
User guide Reading and Understanding an ESD Protection Data Sheet (Rev. A) PDF | HTML 2023年 9月 19日
Application note ESD Protection Layout Guide (Rev. A) PDF | HTML 2022年 4月 7日
White paper Designing USB for short-to-battery tolerance in automotive environments 2016年 2月 10日
Analog Design Journal Design Considerations for System-Level ESD Circuit Protection 2012年 9月 25日

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ESDEVM — ESD 評估模組

靜電敏感裝置 (ESD) 評估模組 (EVM) 是我們大多數 ESD 產品組合的開發平台。此電路板配備所有傳統 ESD 元件封裝,可測試任意數量的裝置。裝置可以焊接到其相應的元件封裝上,然後進行測試。對於一般高速 ESD 二極體,會實作阻抗控制的配置以取得 S 參數並取消內嵌電路板軌跡。對於非高速 ESD 二極體,其元件封裝會包含連接至測試點的軌跡,讓您輕鬆執行 DC 測試,例如崩潰電壓、保持電壓、洩漏等。電路板配置也可以透過將訊號針腳短路到訊號所在的任何地方,讓任何裝置針腳都能輕鬆地連接到電源 (VCC) 或接地。
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