SLUAAY2 December   2024 ISO5451 , ISO5451-Q1 , ISO5452 , ISO5452-Q1 , ISO5851 , ISO5851-Q1 , ISO5852S , ISO5852S-EP , ISO5852S-Q1 , UCC21710 , UCC21710-Q1 , UCC21717-Q1 , UCC21732 , UCC21732-Q1 , UCC21736-Q1 , UCC21737-Q1 , UCC21738-Q1 , UCC21739-Q1 , UCC21750 , UCC21750-Q1 , UCC21755-Q1 , UCC21756-Q1 , UCC21759-Q1

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 SiC and IGBT Characteristics
  6. 3 Failure Modes
  7. 4 Short-Circuit Protection Approaches
    1. 4.1 Short-Circuit Current-Based Protection Implementation
    2. 4.2 Short Circuit Voltage-Based Protection Implementation
  8. 5 DESAT Circuitry Design
    1. 5.1 DESAT Circuit Component Selection
    2. 5.2 Effect of Parasitic Elements
    3. 5.3 Effect of Rlim on DESAT Noise
  9. 6 Safe Shutdown
    1. 6.1 Safe Shutdown Mechanisms
    2. 6.2 Safe Shutdown Considerations
  10. 7 Short-Circuit Test Setup and Data
    1. 7.1 Short-Circuit Bench Measurement Setup
    2. 7.2 SC Board Setup for Data Collection
    3. 7.3 Different Circuit Configurations for SC Testing
    4. 7.4 Bench Measurement Results
    5. 7.5 Overall Summary of SiC vs IGBT Power Module SC Observation
  11. 8 Key Consideration in Designing SC Protection Circuit
  12. 9 Summary
  13. 10References

7.1 Short-Circuit Bench Measurement Setup

To exercise short-circuit event, a half-bridge gate driver board UCC21710QDWEVM-054 is used. This half-bridge board is capable of doing double pulse or SC testing. To exercise SC, the high side driver input is permanently set to high and the low side gate driver is turned on while the high sides switch is on.

High voltage power supply + bulk capacitance used as HV source. The schematic representation of the SC testing is shown in Figure 7-1.

UCC21750Q1 Half Bridge SC Schematic Representation Figure 7-1 Half Bridge SC Schematic Representation

IGBT (FF800R12KE7) and SiC (CAB450M12XM3) power modules are used to collect data for the SC event. VSC-based protection approach used to capture SC event for both DESAT and OC capable gate drivers.

The power modules key parameters are shown in Table 7-1.

Table 7-1 Power Modules Key Parameters
SiC CAB450M12XM3 IGBT FF800R12KE7
VCE/VDS (V) IC/ID (A) 1200V
450A		 1200V
800A
Qg 1330 nC (Vds=800V) 12.8 uC (Vcc=600V) (10x)
Cies / Ciss,
Cres/ Crss		 38 nF, 90 pF 122 nF (3x), 0.6 nF (6x)