Gehäuseinformationen
| Gehäuse | Pins SOIC (DW) | 24 |
| Betriebstemperaturbereich (°C) -40 to 85 |
| Gehäusemenge | Träger 2.000 | LARGE T&R |
Merkmale von CY74FCT827T
- Function, Pinout, and Drive Compatible With FCT, F, and AM29827 Logic
- Reduced VOH (Typically = 3.3 V) Versions of Equivalent FCT Functions
- Edge-Rate Control Circuitry for Significantly Improved Noise Characteristics
- Ioff Supports Partial-Power-Down Mode Operation
- ESD Protection Exceeds JESD 22
- 2000-V Human-Body Model (A114-A)
- 200-V Machine Model (A115-A)
- 1000-V Charged-Device Model (C101)
- 3-State Outputs
- Matched Rise and Fall Times
- Fully Compatible With TTL Input and Output Logic Levels
- CY54FCT827T
- 32-mA Output Sink Current
- 12-mA Output Source Current
- CY74FCT827T
- 64-mA Output Sink Current
- 32-mA Output Source Current
Beschreibung von CY74FCT827T
The \x92FCT827T devices are 10-bit bus drivers that provide high-performance bus-interface buffering for wide data/address paths or buses carrying parity. The 10-bit buffers have NANDed output enables for maximum control flexibility. The \x92FCT827T devices are designed for high-capacitance-load drive capability, while providing low-capacitance bus loading at both inputs and outputs. All outputs are designed for low-capacitance bus loading in the high-impedance state.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.