Berechnungstool
BLDC-MAX-QG-MOSFET-CALCULATOR — Calculate the maximum QG MOSFET for your motor driver
Calculate the maximum QG MOSFET that can be driven based on the PWM switching frequency, algorithm type, and additional external capacitance.
DRV8350R
Maximal 3-phasiger intelligenter Gate-Treiber, 102 V, mit Abwärtsregler
Datenblatt
DRV8350R
- 9 to 100-V, Triple half-bridge gate driver
- Optional integrated buck regulator
- Optional triple low-side current shunt amplifiers
- Smart gate drive architecture
- Adjustable slew rate control for EMI performance
- VGS handshake and minimum dead-time insertion to prevent shoot-through
- 50-mA to 1-A peak source current
- 100-mA to 2-A peak sink current
- dV/dt mitigation through strong pulldown
- Integrated gate driver power supplies
- High-side doubler charge pump For 100% PWM duty cycle control
- Low-side linear regulator
- Integrated LM5008A buck regulator
- 6 to 95-V operating voltage range
- 2.5 to 75-V, 350-mA output capability
- Integrated triple current shunt amplifiers
- Adjustable gain (5, 10, 20, 40 V/V)
- Bidirectional or unidirectional support
- 6x, 3x, 1x, and independent PWM modes
- Supports 120° sensored operation
- SPI or hardware interface available
- Low-power sleep mode (20 µA at VVM = 48-V)
- Integrated protection features
- VM undervoltage lockout (UVLO)
- Gate drive supply undervoltage (GDUV)
- MOSFET VDS overcurrent protection (OCP)
- MOSFET shoot-through prevention
- Gate driver fault (GDF)
- Thermal warning and shutdown (OTW/OTSD)
- Fault condition indicator (nFAULT)
The DRV835x family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. These applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes and a buck regulator to power the gate driver or external controller.
The DRV835x uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events
Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.
Ähnliche Produkte, die für Sie interessant sein könnten
Selbe Funktionalität wie der verglichene Baustein bei abweichender Anschlussbelegung
Technische Dokumentation
Keine Ergebnisse gefunden. Bitte geben Sie einen anderen Begriff ein und versuchen Sie es erneut.
Alle anzeigen 17 Design und Entwicklung
Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.
Evaluierungsplatine
DRV8353RH-EVM — DRV8353RH – Dreiphasiges Smart Gate-Treiber-Evaluierungsmodul
The DRV8353RH-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RH gate driver and CSD19532Q5B NexFET™ MOSFETs.
The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)
Benutzerhandbuch: PDF
Evaluierungsplatine
DRV8353RS-EVM — DRV8353RS-Dreiphasiges Smart Gate-Treiber-Evaluierungsmodul
The DRV8353RS-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RS gate driver and CSD19532Q5B NexFET™ MOSFETs.
The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)
Benutzerhandbuch: PDF
Referenzdesigns
TIDA-01629 — Referenzdesign eines Drehstromwechselrichters mit einem Smart Gate-Treiber für Servoantriebe mit 48
Efficiency, protection, and integration are important design factors for compact DC-fed drives up to 60VDC. This reference design shows a three-phase inverter with nominal 48-V DC input and a 10-ARMS output current. The 100-V intelligent three-phase gate driver DRV8350R with integrated buck (...)
Referenzdesigns
TIDA-010056 — Leistungsstufen-Referenzdesign für 3-phasige BLDC-Antriebe mit 54 V, 1,5 kW, >99 % Wirkungsgrad, 70
This reference design demonstrates a 1.5-kW power stage for driving a three-phase brushless DC motor in cordless tools operating from a 15-cell Li-ion battery with a voltage up to 63-V. The design is a 70mm x 69mm compact drive, bringing 25-ARMS continuous current at 20-kHz switching frequency (...)
| Gehäuse | Pins | CAD-Symbole, Footprints und 3D-Modelle |
|---|---|---|
| VQFN (RGZ) | 48 | Ultra Librarian |
Bestellen & Qualität
Beinhaltete Information:
- RoHS
- REACH
- Bausteinkennzeichnung
- Blei-Finish/Ball-Material
- MSL-Rating / Spitzenrückfluss
- MTBF-/FIT-Schätzungen
- Materialinhalt
- Qualifikationszusammenfassung
- Kontinuierliches Zuverlässigkeitsmonitoring
Beinhaltete Information:
- Werksstandort
- Montagestandort
Support und Schulungen
TI E2E™-Foren mit technischem Support von TI-Ingenieuren
Inhalte werden ohne Gewähr von TI und der Community bereitgestellt. Sie stellen keine Spezifikationen von TI dar. Siehe Nutzungsbedingungen.
Bei Fragen zu den Themen Qualität, Gehäuse oder Bestellung von TI-Produkten siehe TI-Support.