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Treiber für Gleichstrom-Bürstenmotoren

DRV8705-Q1

AKTIV

40-V-H-Brücken-Smart-Gate-Treiber mit Offline-Diagnose für die Automobilindustrie

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Datenblatt

DRV8705-Q1

AKTIV
Datenblatt Jetzt bestellen

Produktdetails

Number of full bridges 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 40 Sleep current (µA) 2.5 Control mode Independent 1/2-Bridge, PH/EN, PWM Control interface Hardware (GPIO), SPI Features Current sense Amplifier, Smart Gate Drive Rating Automotive TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125
Number of full bridges 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 40 Sleep current (µA) 2.5 Control mode Independent 1/2-Bridge, PH/EN, PWM Control interface Hardware (GPIO), SPI Features Current sense Amplifier, Smart Gate Drive Rating Automotive TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125
VQFN (RHB) 32 25 mm² 5 x 5
  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA
  • Functional Safety-Capable
  • H-bridge smart gate driver
    • 4.9V to 37V (40V abs. max) operating range
    • Doubler charge pump for 100% PWM
    • Half-bridge and H-bridge control modes
  • Pin to pin gate driver variants
  • Smart gate drive architecture
    • Adjustable slew rate control
    • 0.5mA to 62mA peak source current output
    • 0.5mA to 62mA peak sink current output
    • Integrated dead-time handshaking
  • Low-side current shunt amplifier
    • Adjustable gain settings (10, 20, 40, 80V/V)
    • Integrated feedback resistors
    • Adjustable PWM blanking scheme
  • Multiple interface options available
    • SPI: Detailed configuration and diagnostics
    • H/W: Simplified control and less MCU pins
  • Spread spectrum clocking for EMI reduction
  • Compact VQFN package with wettable flanks
  • Integrated protection features
    • Dedicated driver disable pin (DRVOFF)
    • Supply and regulator voltage monitors
    • MOSFET VDS overcurrent monitors
    • MOSFET VGS gate fault monitors
    • Charge pump for reverse polarity MOSFET
    • Offline open load and short circuit diagnostics
    • Device thermal warning and shutdown
    • Fault condition interrupt pin (nFAULT)
  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA
  • Functional Safety-Capable
  • H-bridge smart gate driver
    • 4.9V to 37V (40V abs. max) operating range
    • Doubler charge pump for 100% PWM
    • Half-bridge and H-bridge control modes
  • Pin to pin gate driver variants
  • Smart gate drive architecture
    • Adjustable slew rate control
    • 0.5mA to 62mA peak source current output
    • 0.5mA to 62mA peak sink current output
    • Integrated dead-time handshaking
  • Low-side current shunt amplifier
    • Adjustable gain settings (10, 20, 40, 80V/V)
    • Integrated feedback resistors
    • Adjustable PWM blanking scheme
  • Multiple interface options available
    • SPI: Detailed configuration and diagnostics
    • H/W: Simplified control and less MCU pins
  • Spread spectrum clocking for EMI reduction
  • Compact VQFN package with wettable flanks
  • Integrated protection features
    • Dedicated driver disable pin (DRVOFF)
    • Supply and regulator voltage monitors
    • MOSFET VDS overcurrent monitors
    • MOSFET VGS gate fault monitors
    • Charge pump for reverse polarity MOSFET
    • Offline open load and short circuit diagnostics
    • Device thermal warning and shutdown
    • Fault condition interrupt pin (nFAULT)

The DRV8705-Q1 is a highly integrated H-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side.

The device uses a smart gate drive architecture to reduce system cost and improve reliability. The gate driver optimizes dead time to avoid shoot-through conditions, provides control to decreasing electromagnetic interference (EMI) through adjustable gate drive current, and protects against drain to source and gate short conditions with VDS and VGS monitors.

A low-side shunt amplifier allows for current sensing in order to measure motor current and provide feedback to the external controller for current limiting or stall detection.

The DRV8705-Q1 provide an array of protection features to ensure robust system operation. These include under and overvoltage monitors for the power supply and charge pump, VDS overcurrent and VGS gate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection.

The DRV8705-Q1 is a highly integrated H-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side.

The device uses a smart gate drive architecture to reduce system cost and improve reliability. The gate driver optimizes dead time to avoid shoot-through conditions, provides control to decreasing electromagnetic interference (EMI) through adjustable gate drive current, and protects against drain to source and gate short conditions with VDS and VGS monitors.

A low-side shunt amplifier allows for current sensing in order to measure motor current and provide feedback to the external controller for current limiting or stall detection.

The DRV8705-Q1 provide an array of protection features to ensure robust system operation. These include under and overvoltage monitors for the power supply and charge pump, VDS overcurrent and VGS gate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection.
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Technische Dokumentation

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Typ Titel Datum
* Data sheet DRV8705-Q1 Automotive H-Bridge Smart Gate Driver With Low-Side Current Sense Amplifier datasheet (Rev. B) PDF | HTML 20 Mai 2024
More literature TI Motor Drives Automotive Body Motors Webinar 02 Jul 2021
Application note Daisy Chain Implementation for Serial Peripheral Interface (Rev. A) 07 Apr 2021
Application note Understanding Smart Gate Drive (Rev. D) 01 Mär 2021
Functional safety information DRV8705-Q1 Functional Safety, FIT Rate, Failure Mode Distribution, and Pin FMA PDF | HTML 17 Feb 2021
Application note Methods to Configure Current Regulation for Brushed and Stepper Motors (Rev. B) PDF | HTML 19 Jan 2021
Technical article How analog integration simplifies automotive body motor controller designs PDF | HTML 23 Okt 2020
Application note Detecting Short to Battery and Ground Conditions with TI Motor Gate Drivers PDF | HTML 29 Mai 2020
White paper Smart Gate Drive 02 Jul 2019
Application note Protecting Automotive Motor Drive Systems from Reverse Polarity Conditions (Rev. A) 19 Feb 2019
Application note Cut-Off Switch in High-Current Motor-Drive Applications (Rev. A) 20 Aug 2018
Application note Relay Replacement for Brushed DC Motor Drive in Automotive Applications 14 Nov 2016

Design und Entwicklung

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Evaluierungsplatine

DRV8705H-Q1EVM — H-Brücken-Smart-Gate-Treiber-EVM für den Automobilbereich mit Low-Side-Strommessverstärker

Das DRV8705H-Q1EVM wurde entwickelt, um den DRV8705H-Q1 zu evaluieren, einen integrierten Treiber für bürstenbehaftete Gleichstrommotoren, der für den Automobilbereich qualifiziert ist. Der DRV8705H-Q1 ist ein hochintegrierter H-Brücken-Gate-Treiber. Er kann sowohl Highside- als auch (...)

Benutzerhandbuch: PDF
Nicht verfügbar auf TI.com
Evaluierungsplatine

DRV8705S-Q1EVM — H-Brücken-Smart-Gate-Treiber-EVM für den Automobilbereich mit Low-Side-Strommessverstärker

Das DRV8705S-Q1EVM wurde entwickelt, um den DRV8705H-Q1 zu evaluieren, einen integrierten Treiber für bürstenbehaftete Gleichstrommotoren, der für den Automobilbereich qualifiziert ist. Der DRV8705S-Q1 ist ein hochintegrierter H-Brücken-Gate-Treiber. Er kann sowohl Highside- als auch (...)

Benutzerhandbuch: PDF
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Simulationsmodell

DRV8701E Transient Simulation Model (Rev. A)

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VQFN (RHB) 32 Ultra Librarian
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  • Blei-Finish/Ball-Material
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  • Qualifikationszusammenfassung
  • Kontinuierliches Zuverlässigkeitsmonitoring
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