Gehäuseinformationen
| Gehäuse | Pins HTSSOP (PWP) | 24 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 2.000 | LARGE T&R |
Merkmale von DRV8873-Q1
- AEC-Q100 qualified for automotive applications
- Device temperature grade 1: –40°C to +125°C, TA
- N-channel H-bridge motor driver
- Drives one bidirectional brushed DC motor
- Two unidirectional brushed DC motors
- Solenoids or other resistive and inductive loads
- 4.5-V to 38-V Operating voltage range
- 10-A Peak current drive
- Low HS + LS RDS(ON)
- 150 mΩ at TJ = 25°C, 13.5 V
- 250 mΩ at TJ = 150°C, 13.5 V
- Integrated current sensing
- Proportional current output (IPROPI)
- Configurable control interface
- PH/EN
- PWM (IN1/IN2)
- Independent half-bridge control
- Supports 1.8-V, 3.3-V, 5-V logic inputs
- SPI or hardware interface options
- Small package and footprint
- 24 HTSSOP PowerPAD™ IC package
- Protection features
- VM undervoltage lockout (UVLO)
- Charge pump undervoltage (CPUV)
- Overcurrent protection (OCP)
- Output short to battery and short to ground protection
- Open load detection
- Thermal shutdown (TSD)
- Fault condition output (nFAULT / SPI)
- Spread spectrum clocking for low electromagnetic interference (EMI)
- Functional Safety-Capable
Beschreibung von DRV8873-Q1
The DRV8873-Q1 device is an integrated driver IC for driving a brushed DC motor in automotive applications. Two logic inputs control the H-bridge driver, which consists of four N-channel MOSFETs that drive motors bi-directionally with up to 10-A peak current. The device operates from a single power supply and supports a wide input supply range from 4.5 V to 38 V.
A PH/EN or PWM interface allows simple interfacing to controller circuits. Alternatively, independent half-bridge control is available to drive two solenoid loads.
Integrated current sensing provides an output current proportional to the motor load current of both hide-side FETs without the need for high-power sense resistors. This can be used to detect motor stall or change in load conditions.
A low-power sleep mode is provided to achieve very-low quiescent current draw by shutting down much of the internal circuitry. Internal protection functions are provided for undervoltage lockout, charge pump faults, overcurrent protection, short-circuit protection, open-load detection, and overtemperature. Fault conditions are indicated on an nFAULT pin and through the SPI registers.