Gehäuseinformationen
| Gehäuse | Pins SOIC (D) | 8 |
| Betriebstemperaturbereich (°C) -55 to 125 |
| Gehäusemenge | Träger 75 | TUBE |
Merkmale von LT1013D
- Single-Supply Operation
- Input Voltage Range Extends to Ground
- Output Swings to Ground While Sinking Current
- Phase Reversal Protection
- Input Offset Voltage
- 150 µV Maximum at 25°C for LT1013AM
- Offset-Voltage Temperature Coefficient
- 2 µV/°C Maximum for LT1013AM
- Input Offset Current
- 0.8 nA Maximum at 25°C for LT1013AM
- High Gain
- 1.5 V/µV Minimum (RL = 2 kΩ) for LT1013AM
- 0.8 V/µV Minimum (RL = 600 kΩ) for LT1013AM
- Low Supply Current
- 0.5 mA Maximum at TA = 25°C for LT1013AM
- Low Peak-to-Peak Noise Voltage
- 0.55 µV Typical
- Low Current Noise
- 0.07 pA/√Hz Typical
- For Die Only Option, See LT1013-DIE
Beschreibung von LT1013D
The LT1013x devices are dual precision operational amplifiers, featuring high gain, low supply current, low noise, and low-offset-voltage temperature coefficient.
The LT1013x devices can be operated from a single 5-V power supply; the common-mode input voltage range includes ground, and the output can also swing to within a few millivolts of ground. Crossover distortion is eliminated. The LT1013x can be operated with both dual ± 15-V and single 5-V supplies.
The LT1013C and LT1013D are characterized for operation from 0°C to 70°C. The LT1013DI is characterized for operation from –40°C to 105°C. The LT1013M, LT1013AM, and LT1013DM are characterized for operation over the full military temperature range of –55°C to 125°C.