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SN74BCT2827C

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10-Kanal-Puffer, 4,5 bis 5,5 V mit Tri-State-Ausgängen

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Datenblatt

SN74BCT2827C

AKTIV
Datenblatt Jetzt bestellen

Produktdetails

Technology family BCT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 10 IOL (max) (mA) 12 Supply current (max) (µA) 40000 IOH (max) (mA) -1 Input type Bipolar Output type 3-State Features Damping resistors, Over-voltage tolerant inputs, Power up 3-state, Very high speed (tpd 5-10ns) Rating Catalog Operating temperature range (°C) 0 to 70
Technology family BCT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 10 IOL (max) (mA) 12 Supply current (max) (µA) 40000 IOH (max) (mA) -1 Input type Bipolar Output type 3-State Features Damping resistors, Over-voltage tolerant inputs, Power up 3-state, Very high speed (tpd 5-10ns) Rating Catalog Operating temperature range (°C) 0 to 70
SOIC (DW) 24 159.65 mm² 15.5 x 10.3
  • BiCMOS Design Substantially Reduces ICCZ
  • Output Ports Have Equivalent 25- Resistors; No External Resistors Are Required
  • Specifically Designed to Drive MOS DRAMs
  • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers
  • Flow-Through Architecture Optimizes PCB Layout
  • Power-Up High-Impedance State
  • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015
  • Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)
  • BiCMOS Design Substantially Reduces ICCZ
  • Output Ports Have Equivalent 25- Resistors; No External Resistors Are Required
  • Specifically Designed to Drive MOS DRAMs
  • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers
  • Flow-Through Architecture Optimizes PCB Layout
  • Power-Up High-Impedance State
  • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015
  • Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)

These 10-bit buffers and bus drivers are specifically designed to drive the capacitive input characteristics of MOS DRAMs. They provide high-performance bus interface for wide data paths or buses carrying parity.

The 3-state control gate is a 2-input AND gate with active-low inputs so if either output-enable ( or ) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down.

The SN54BCT2827C is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74BCT2827C is characterized for operation from 0°C to 70°C.

These 10-bit buffers and bus drivers are specifically designed to drive the capacitive input characteristics of MOS DRAMs. They provide high-performance bus interface for wide data paths or buses carrying parity.

The 3-state control gate is a 2-input AND gate with active-low inputs so if either output-enable ( or ) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down.

The SN54BCT2827C is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74BCT2827C is characterized for operation from 0°C to 70°C.
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Typ Titel Datum
* Data sheet 10-Bit Bus/MOS Memory Drivers With 3-State Outputs datasheet (Rev. E) 01 Jan 1991

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