Produktdetails

Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 6 IOH (max) (mA) -6 Input type TTL Output type CMOS Features Balanced outputs, High speed (tpd 10-50ns), Positive input clamp diode Technology family HCT Rating Catalog Operating temperature range (°C) -40 to 85
Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 6 IOH (max) (mA) -6 Input type TTL Output type CMOS Features Balanced outputs, High speed (tpd 10-50ns), Positive input clamp diode Technology family HCT Rating Catalog Operating temperature range (°C) -40 to 85
SOIC (DW) 24 159.65 mm² 15.5 x 10.3
  • Operating Voltage Range of 4.5 V to 5.5 V
  • Low Power Consumption, 80-µA Max ICC
  • Typical tpd = 12 ns
  • ±6-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max
  • Inputs Are TTL-Voltage Compatible
  • Independent Registers and Enables for A and B Buses
  • Multiplexed Real-Time and Stored Data
  • True Data Paths
  • High-Current 3-State Outputs Can Drive Up To 15 LSTTL Loads

  • Operating Voltage Range of 4.5 V to 5.5 V
  • Low Power Consumption, 80-µA Max ICC
  • Typical tpd = 12 ns
  • ±6-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max
  • Inputs Are TTL-Voltage Compatible
  • Independent Registers and Enables for A and B Buses
  • Multiplexed Real-Time and Stored Data
  • True Data Paths
  • High-Current 3-State Outputs Can Drive Up To 15 LSTTL Loads

The ’HCT652 devices consist of bus-transceiver circuits, D-type flip-flops, and control circuitry arranged for multiplexed transmission of data directly from the data bus or from the internal storage registers. Output-enable (OEAB and OEBA\) inputs are provided to control the transceiver functions. Select-control (SAB and SBA) inputs are provided to select real-time or stored data transfer. A low input level selects real-time data; a high input level selects stored data. Figure 1 illustrates the four fundamental bus-management functions that can be performed with these devices.

Data on the A or B data bus, or both, can be stored in the internal D-type flip-flops by low-to-high transitions at the appropriate clock (CLKAB or CLKBA) terminals, regardless of the select- or output-control terminals. When SAB and SBA are in the real-time transfer mode, it is possible to store data without using the internal D-type flip-flops by simultaneously enabling OEAB and OEBA\. In this configuration, each output reinforces its input. When all other data sources to the two sets of bus lines are at high impedance, each set of bus lines remains at its last state.

To ensure the high-impedance state during power up or power down, OEBA\ should be tied to VCC through a pullup resistor and OEAB should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver.

The ’HCT652 devices consist of bus-transceiver circuits, D-type flip-flops, and control circuitry arranged for multiplexed transmission of data directly from the data bus or from the internal storage registers. Output-enable (OEAB and OEBA\) inputs are provided to control the transceiver functions. Select-control (SAB and SBA) inputs are provided to select real-time or stored data transfer. A low input level selects real-time data; a high input level selects stored data. Figure 1 illustrates the four fundamental bus-management functions that can be performed with these devices.

Data on the A or B data bus, or both, can be stored in the internal D-type flip-flops by low-to-high transitions at the appropriate clock (CLKAB or CLKBA) terminals, regardless of the select- or output-control terminals. When SAB and SBA are in the real-time transfer mode, it is possible to store data without using the internal D-type flip-flops by simultaneously enabling OEAB and OEBA\. In this configuration, each output reinforces its input. When all other data sources to the two sets of bus lines are at high impedance, each set of bus lines remains at its last state.

To ensure the high-impedance state during power up or power down, OEBA\ should be tied to VCC through a pullup resistor and OEAB should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver.

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Typ Titel Datum
* Data sheet SN54HCT652, SN74HCT652 datasheet (Rev. D) 18 Mär 2003
Application note Implications of Slow or Floating CMOS Inputs (Rev. E) 26 Jul 2021
Selection guide Logic Guide (Rev. AB) 12 Jun 2017
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 02 Dez 2015
User guide LOGIC Pocket Data Book (Rev. B) 16 Jan 2007
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 Jul 2004
User guide Signal Switch Data Book (Rev. A) 14 Nov 2003
Application note TI IBIS File Creation, Validation, and Distribution Processes 29 Aug 2002
Application note CMOS Power Consumption and CPD Calculation (Rev. B) 01 Jun 1997
Application note Designing With Logic (Rev. C) 01 Jun 1997
Application note SN54/74HCT CMOS Logic Family Applications and Restrictions 01 Mai 1996
Application note Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc 01 Apr 1996

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