SN54SC6T06-SEP
- Vendor item drawing available, VID V62/24616
- Total ionizing dose characterized at 30 krad (Si)
- Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si)
- Single-event effects (SEE) characterized:
- Single event latch-up (SEL) immune to linear energy transfer (LET) = 43 MeV-cm2 /mg
- Single event transient (SET) characterized to 43 MeV-cm2 /mg
- Wide operating range of 1.2V to 5.5V
- Single-supply translating gates at 5/3.3/2.5/1.8/1.2V VCC
- TTL compatible inputs:
- Up translation:
- 1.8V – Inputs from 1.2V
- 2.5V – Inputs from 1.8V
- 3.3V – Inputs from 1.8V, 2.5V
- 5.0V – Inputs from 2.5V, 3.3V
- Down translation:
-
1.2V – Inputs from 1.8V, 2.5V, 3.3V, 5.0V
- 1.8V – Inputs from 2.5V, 3.3V, 5.0V
- 2.5V – Inputs from 3.3V, 5.0V
- 3.3V – Inputs from 5.0V
-
- Up translation:
- TTL compatible inputs:
- 5.5V tolerant input pins
- Output drive up to 25mA AT 5V
- Latch-up performance exceeds 250mA per JESD 17
- Space enhanced plastic (SEP)
- Controlled baseline
- Gold bondwire
- NiPdAu lead finish
- One assembly and test site
- One fabrication site
- Military (–55°C to 125°C) temperature range
- Extended product life cycle
- Product traceability
- Meets NASAs ASTM E595 outgassing specification
The SN54SC6T06-SEP device contains six independent inverters with open-drain outputs and extended voltage operation to allow for level translation. Each inverter performs the Boolean function Y = A in positive logic. The output level is referenced to the supply voltage (VCC) and supports 1.2V, 1.8V, 2.5V, 3.3V, and 5V CMOS levels.
The input is designed with a lower threshold circuit to support up translation for lower voltage CMOS inputs (for example 1.2V input to 1.8V output or 1.8V input to 3.3V output). Additionally, the 5V tolerant input pins enable down translation (for example 3.3V to 2.5V output).
기술 자료
유형 | 직함 | 날짜 | ||
---|---|---|---|---|
* | Data sheet | SN54SC6T06-SEP Radiation Tolerant, Hex Inverter Buffers/Drivers With Open-Drain Outputs datasheet | PDF | HTML | 2024/01/19 |
* | Radiation & reliability report | SN54SC6T06-SEP Production Flow and Reliability Report | PDF | HTML | 2024/04/10 |
* | Radiation & reliability report | SN54SC6T07-SEP Single Event Effects Radiation Report | PDF | HTML | 2024/02/21 |
* | Radiation & reliability report | SN54SC6T06-SEP Total Ionizing Dose (TID) Report | PDF | HTML | 2024/02/08 |
Application note | Schematic Checklist - A Guide to Designing With Fixed or Direction Control Translators | PDF | HTML | 2024/10/02 | |
Application brief | TI Space Enhanced Plastic Logic Overview and Applications in Low-Earth Orbit Satellite Platforms | PDF | HTML | 2024/09/10 | |
Application note | Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators | PDF | HTML | 2024/07/12 | |
Application note | Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) | PDF | HTML | 2024/07/03 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
14-24-LOGIC-EVM — 14핀~24핀 D, DB, DGV, DW, DYY, NS 및 PW 패키지용 로직 제품 일반 평가 모듈
14-24-LOGIC-EVM 평가 모듈(EVM)은 14핀~24핀 D, DW, DB, NS, PW, DYY 또는 DGV 패키지에 있는 모든 로직 장치를 지원하도록 설계되었습니다.
패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
---|---|---|
TSSOP (PW) | 14 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치