패키징 정보
패키지 | 핀 VQFN (RGY) | 16 |
작동 온도 범위(°C) -40 to 85 |
패키지 수량 | 캐리어 3,000 | LARGE T&R |
SN74CB3Q3253의 주요 특징
- High-Bandwidth Data Path (Up to 500 MHz) (1)
- 5-V Tolerant I/Os With Device Powered Up or Powered Down
- Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4 Ω Typical)
- Rail-to-Rail Switching on Data I/O Ports
- 0- to 5-V Switching With 3.3-V VCC
- 0- to 3.3-V Switching With 2.5-V VCC
- Bidirectional Data Flow With Near-Zero Propagation Delay
- Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5 pF Typical)
- Fast Switching Frequency (fOE = 20 MHz Max)
- Data and Control Inputs Provide Undershoot Clamp Diodes
- Low Power Consumption (ICC = 0.6 mA Typical)
- VCC Operating Range From 2.3 V to 3.6 V
- Data I/Os Support 0- to 5-V Signal Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
- Control Inputs Can be Driven by TTL or 5-V and 3.3-V CMOS Outputs
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- Supports Both Digital and Analog Applications: USB Interface, Differential Signal Interface Bus Isolation, Low-Distortion Signal Gating (1)
(1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report CBT-C, CB3T, and CB3Q Signal-Switch Families, (SCDA008).
SN74CB3Q3253에 대한 설명
The SN74CB3Q3253 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input and output (I/O) ports.