TXS02326A

활성

듀얼 공급 2:1 SIM 카드 멀티플렉서/트랜스레이터(자동 감지 및 슬롯 전용 듀얼 LDO 지원)

제품 상세 정보

Technology family TXS Applications SIM Card Rating Catalog Operating temperature range (°C) -40 to 85
Technology family TXS Applications SIM Card Rating Catalog Operating temperature range (°C) -40 to 85
VQFN (RGE) 24 16 mm² 4 x 4
  • Level Translator
    • VDDIO Range of 1.7-V to 3.3-V
  • Low-Dropout (LDO) Regulator
    • 50-mA LDO Regulator With Enable
    • 1.8-V or 2.95-V Selectable Output Voltage
    • 2.3-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 100 mV (Max) at 50 mA
  • Control and Communication Through I2C Interface
    With Baseband Processor
  • ESD Protection Exceeds JESD 22
    • 2500-V Human-Body Model (A114-B)
    • 6000-V Human-Body Model (A114-B) on VSIM1, SIM1CLK,
      SIM1I/O, SIM1RST, VSIM2, SIM2CLK, SIM2I/O, SIM2RST
    • 1000-V Charged-Device Model (C101)
  • Package
    • 24-Pin QFN (4 mm × 4 mm)

  • Level Translator
    • VDDIO Range of 1.7-V to 3.3-V
  • Low-Dropout (LDO) Regulator
    • 50-mA LDO Regulator With Enable
    • 1.8-V or 2.95-V Selectable Output Voltage
    • 2.3-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 100 mV (Max) at 50 mA
  • Control and Communication Through I2C Interface
    With Baseband Processor
  • ESD Protection Exceeds JESD 22
    • 2500-V Human-Body Model (A114-B)
    • 6000-V Human-Body Model (A114-B) on VSIM1, SIM1CLK,
      SIM1I/O, SIM1RST, VSIM2, SIM2CLK, SIM2I/O, SIM2RST
    • 1000-V Charged-Device Model (C101)
  • Package
    • 24-Pin QFN (4 mm × 4 mm)

The TXS02326A is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with two individual SIM subscriber cards to store data for mobile handset applications. It is a custom device which is used to extend a single SIM/UICC interface to support two SIMs/UICCs.

The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95-V) and Class-C (1.8-V) interfaces; two low-dropout (LDO) voltage regulators with output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces; an integrated "fast-mode" 400 kb/s "slave" I2C control register interface, for configuration purposes; and a 32-kHz clock input, for internal timing generation. The TXS02326A also includes a shutdown input and a comparator input that detects battery pack removal to safely power-down the two SIM cards. The shutdown input and comparator input are equipped with two programmable debounce counter (i.e. BSI input and SDN input) circuits realized by an 8 bit counter.

The voltage-level translator has two supply voltage pins. VDDIO sets the reference for the baseband interface and can be operated from 1.7-V to 3.3-V. VSIM1 and VSIM2 are programmed to either 1.8-V or 2.95-V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input battery voltages from 2.3-V to 5.5-V and outputs up to 50 mA to the B-side circuitry and external Class-B or Class-C SIM card.

The TXS02326A is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with two individual SIM subscriber cards to store data for mobile handset applications. It is a custom device which is used to extend a single SIM/UICC interface to support two SIMs/UICCs.

The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95-V) and Class-C (1.8-V) interfaces; two low-dropout (LDO) voltage regulators with output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces; an integrated "fast-mode" 400 kb/s "slave" I2C control register interface, for configuration purposes; and a 32-kHz clock input, for internal timing generation. The TXS02326A also includes a shutdown input and a comparator input that detects battery pack removal to safely power-down the two SIM cards. The shutdown input and comparator input are equipped with two programmable debounce counter (i.e. BSI input and SDN input) circuits realized by an 8 bit counter.

The voltage-level translator has two supply voltage pins. VDDIO sets the reference for the baseband interface and can be operated from 1.7-V to 3.3-V. VSIM1 and VSIM2 are programmed to either 1.8-V or 2.95-V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input battery voltages from 2.3-V to 5.5-V and outputs up to 50 mA to the B-side circuitry and external Class-B or Class-C SIM card.

다운로드 스크립트와 함께 비디오 보기 동영상

기술 자료

star =TI에서 선정한 이 제품의 인기 문서
검색된 결과가 없습니다. 검색어를 지우고 다시 시도하십시오.
4개 모두 보기
유형 직함 날짜
* Data sheet Dual-Supply 2:1 SIM Card Multiplexer/Translator With Automatic Detection datasheet (Rev. A) 2013/08/02
Application note Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators PDF | HTML 2024/07/12
Application note Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 2024/07/03
Selection guide Voltage Translation Buying Guide (Rev. A) 2021/04/15

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

시뮬레이션 모델

TXS02326A IBIS Model

SCEM552.ZIP (144 KB) - IBIS Model
패키지 CAD 기호, 풋프린트 및 3D 모델
VQFN (RGE) 24 Ultra Librarian

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

지원 및 교육

TI 엔지니어의 기술 지원을 받을 수 있는 TI E2E™ 포럼

콘텐츠는 TI 및 커뮤니티 기고자에 의해 "있는 그대로" 제공되며 TI의 사양으로 간주되지 않습니다. 사용 약관을 참조하십시오.

품질, 패키징, TI에서 주문하는 데 대한 질문이 있다면 TI 지원을 방문하세요. ​​​​​​​​​​​​​​

동영상