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LMH5485-SEP

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耐輻射 850MHz 全差動放大器

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產品規格表

LMH5485-SEP

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.7 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.1 BW at Acl (MHz) 620 Acl, min spec gain (V/V) 1 Slew rate (typ) (V/µs) 1500 Architecture Fully Differential ADC Driver Vn at flatband (typ) (nV√Hz) 2.2 Iq per channel (typ) (mA) 10.1 Rail-to-rail In to V-, Out Vos (offset voltage at 25°C) (max) (mV) 0.45 Operating temperature range (°C) -55 to 125 Iout (typ) (mA) 100 2nd harmonic (dBc) 140 3rd harmonic (dBc) 140 Frequency of harmonic distortion measurement (MHz) 0.1 GBW (typ) (MHz) 850 Input bias current (max) (pA) 13000000 Features Shutdown CMRR (typ) (dB) 100 Rating Space
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.7 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.1 BW at Acl (MHz) 620 Acl, min spec gain (V/V) 1 Slew rate (typ) (V/µs) 1500 Architecture Fully Differential ADC Driver Vn at flatband (typ) (nV√Hz) 2.2 Iq per channel (typ) (mA) 10.1 Rail-to-rail In to V-, Out Vos (offset voltage at 25°C) (max) (mV) 0.45 Operating temperature range (°C) -55 to 125 Iout (typ) (mA) 100 2nd harmonic (dBc) 140 3rd harmonic (dBc) 140 Frequency of harmonic distortion measurement (MHz) 0.1 GBW (typ) (MHz) 850 Input bias current (max) (pA) 13000000 Features Shutdown CMRR (typ) (dB) 100 Rating Space
VSSOP (DGK) 8 14.7 mm² 3 x 4.9
  • Radiation tolerant
    • TID assured for every wafer lot up to 30 krad (Si)
    • Single event latch-up (SEL) immune to LET = 43 MeV-cm2 /mg
    • Qualified over the military temperature range: .. –55°C to 125°C
  • Gain bandwidth product (GBWP): 850 MHz
  • Slew rate: 1300 V/µs
  • HD2, HD3: –118 dBc, –147 dBc (100 kHz, 2 VPP)
  • Input voltage noise: 2.4 nV/√Hz
  • Low offset drift: ±0.5 µV/°C (typical)
  • Negative rail input (NRI), rail-to-rail output (RRO)
  • Power supply:
    • Supply voltage range: 2.7 V to 5.4 V
    • Quiescent current: 10.1 mA
    • Power-down capability: 2 µA (typical)
  • Radiation tolerant
    • TID assured for every wafer lot up to 30 krad (Si)
    • Single event latch-up (SEL) immune to LET = 43 MeV-cm2 /mg
    • Qualified over the military temperature range: .. –55°C to 125°C
  • Gain bandwidth product (GBWP): 850 MHz
  • Slew rate: 1300 V/µs
  • HD2, HD3: –118 dBc, –147 dBc (100 kHz, 2 VPP)
  • Input voltage noise: 2.4 nV/√Hz
  • Low offset drift: ±0.5 µV/°C (typical)
  • Negative rail input (NRI), rail-to-rail output (RRO)
  • Power supply:
    • Supply voltage range: 2.7 V to 5.4 V
    • Quiescent current: 10.1 mA
    • Power-down capability: 2 µA (typical)

The LMH5485-SEP is a radiation tolerant, low-power, voltage-feedback, fully differential amplifier (FDA). This part is able to achieve a high gain bandwidth product (GBWP) of 850-MHz, allowing it to maintain excellent distortion performance over a wide range of frequencies as shown in the following figure. This wide bandwidth range is also achieved with a relatively low power consumption of 10.1-mA and broadband voltage noise of 2.4nV/√Hz. This combination of power consumption, bandwidth and noise allows the LMH5485-SEP to be well suited for power sensitive data acquisition systems with frequencies >10 MHz that require both the best signal-to-noise ratio (SNR) and spurious-free dynamic range (SFDR).

The LMH5485-SEP features the negative-rail input required when interfacing with a DC-coupled, ground-centered, source signal. This negative-rail input, with a rail-to-rail output, allows for easy interface between single-ended, ground-referenced, bipolar signal sources and a wide variety of successive approximation register (SAR), delta-sigma (ΔΣ), or pipeline ADCs using only a single 2.7 V to 5.4 V power supply. This device also features a low offset voltage drift of ±0.5 µV/°C, allowing it to maintain excellent DC performance over it’s wide temperature range of –55°C to +125°C.

The LMH5485-SEP is a radiation tolerant, low-power, voltage-feedback, fully differential amplifier (FDA). This part is able to achieve a high gain bandwidth product (GBWP) of 850-MHz, allowing it to maintain excellent distortion performance over a wide range of frequencies as shown in the following figure. This wide bandwidth range is also achieved with a relatively low power consumption of 10.1-mA and broadband voltage noise of 2.4nV/√Hz. This combination of power consumption, bandwidth and noise allows the LMH5485-SEP to be well suited for power sensitive data acquisition systems with frequencies >10 MHz that require both the best signal-to-noise ratio (SNR) and spurious-free dynamic range (SFDR).

The LMH5485-SEP features the negative-rail input required when interfacing with a DC-coupled, ground-centered, source signal. This negative-rail input, with a rail-to-rail output, allows for easy interface between single-ended, ground-referenced, bipolar signal sources and a wide variety of successive approximation register (SAR), delta-sigma (ΔΣ), or pipeline ADCs using only a single 2.7 V to 5.4 V power supply. This device also features a low offset voltage drift of ±0.5 µV/°C, allowing it to maintain excellent DC performance over it’s wide temperature range of –55°C to +125°C.
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類型 標題 日期
* Data sheet LMH5485-SEP Radiation Tolerant, Negative Rail Input, Rail-to-Rail Output, Precision, 850 MHz Fully Differential Amplifier datasheet (Rev. A) PDF | HTML 2022年 11月 22日
* Radiation & reliability report LMH5485-SEP Production Flow and Reliability Report PDF | HTML 2022年 12月 12日
Technical article 航太級強化產品如何因應低地球軌道應用的挑戰 (Rev. A) PDF | HTML 2024年 1月 11日
Circuit design Space-Grade, SE-to-Diff ADC Driver Circuit Using a Fully-Differential Amplifier PDF | HTML 2023年 6月 15日
Application brief Analog Front-End Design With Texas Instruments’ Tooling Landscape PDF | HTML 2022年 3月 7日

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使用指南: PDF | HTML
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LMH5485-SEP PSpice Model

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LMH5485-SEP TINA-TI Model

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