現在提供此產品的更新版本

open-in-new 比較替代產品
可直接投入的替代產品,相較於所比較的裝置,具備升級功能
TPD4E05U06 現行 適於 USB、HDMI 和高速介面的四 0.5-pF、5.5-V、±12-kV ESD 防護二極體 Lower capacitance and clamping voltage intended for use on high speed data lines

產品詳細資料

Package name USON Peak pulse power (8/20 μs) (max) (W) 25 Vrwm (V) 5.5 Bi-/uni-directional Uni-Directional Number of channels 4 IO capacitance (typ) (pF) 0.8 IEC 61000-4-2 contact (±V) 8000 IEC 61000-4-5 (A) 2.5 Clamping voltage (V) 20 Dynamic resistance (typ) 1.1 Interface type Ethernet, HDMI 1.4/1.3, LVDS, SATA/PCIe, USB 2.0 Breakdown voltage (min) (V) 9 IO leakage current (max) (nA) 100 Rating Catalog Operating temperature range (°C) -40 to 85
Package name USON Peak pulse power (8/20 μs) (max) (W) 25 Vrwm (V) 5.5 Bi-/uni-directional Uni-Directional Number of channels 4 IO capacitance (typ) (pF) 0.8 IEC 61000-4-2 contact (±V) 8000 IEC 61000-4-5 (A) 2.5 Clamping voltage (V) 20 Dynamic resistance (typ) 1.1 Interface type Ethernet, HDMI 1.4/1.3, LVDS, SATA/PCIe, USB 2.0 Breakdown voltage (min) (V) 9 IO leakage current (max) (nA) 100 Rating Catalog Operating temperature range (°C) -40 to 85
USON (DQA) 10 2.5 mm² 2.5 x 1
  • IEC 61000-4-2 Level 4 ESD Protection
    • ±8-kV Contact Discharge
  • IEC 61000-4-5 Surge Protection
    • 2.5A (8/20µs)
  • I/O Capacitance: 0.8 pF (Typical)
  • Low Leakage Current: 10 nA (Typical)
  • Supports High-Speed Differential Data Rates
    (3-dB Bandwidth > 4 GHz)
  • Ultra-low Matching Capacitance Between
    Differential Signal Pairs
  • Ioff Feature for the TPD4S009
  • Industrial Temperature Range:
    –40°C to 85°C
  • Easy Straight through Routing, Space-Saving
    Package Options
  • IEC 61000-4-2 Level 4 ESD Protection
    • ±8-kV Contact Discharge
  • IEC 61000-4-5 Surge Protection
    • 2.5A (8/20µs)
  • I/O Capacitance: 0.8 pF (Typical)
  • Low Leakage Current: 10 nA (Typical)
  • Supports High-Speed Differential Data Rates
    (3-dB Bandwidth > 4 GHz)
  • Ultra-low Matching Capacitance Between
    Differential Signal Pairs
  • Ioff Feature for the TPD4S009
  • Industrial Temperature Range:
    –40°C to 85°C
  • Easy Straight through Routing, Space-Saving
    Package Options

The TPD4S009 and TPD4S010 are four-channel TVS diode arrays for electrostatic discharge (ESD) protection. TPD4S009 and TPD4S010 are rated to dissipate contact ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4), with ±8-kV contact discharge ESD protection. The low capacitance (0.8-pF) of these devices, coupled with the excellent matching between differential signal pairs (0.05-pF line-line capacitance for the TPD4S009DRY) enables this device to provide transient voltage suppression circuit protection for high-speed differential data rates (3-dB bandwidth > 4 GHz).

The TPD4S009 is offered in DBV, DCK, DGS, and DRY packages. The TPD4S009DRYR is the most space saving package option available for dual pair high-speed differential lines. The TPD4S010 is offered in the industry standard DQA package. The TPD4S009DGSR and TPD4S010DQAR offer flow-through board layout options to reduce signal glitches normally caused by routing mismatches between the D+ and D– signal pair. See also TPD4E05U06DQAR which is P2P compatible with TPD4S010DQAR. This device offers higher IEC ESD protection, lower capacitance, lower RDYN, lower DC breakdown voltage, and lower clamping voltage.

The TPD4S009 and TPD4S010 are four-channel TVS diode arrays for electrostatic discharge (ESD) protection. TPD4S009 and TPD4S010 are rated to dissipate contact ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4), with ±8-kV contact discharge ESD protection. The low capacitance (0.8-pF) of these devices, coupled with the excellent matching between differential signal pairs (0.05-pF line-line capacitance for the TPD4S009DRY) enables this device to provide transient voltage suppression circuit protection for high-speed differential data rates (3-dB bandwidth > 4 GHz).

The TPD4S009 is offered in DBV, DCK, DGS, and DRY packages. The TPD4S009DRYR is the most space saving package option available for dual pair high-speed differential lines. The TPD4S010 is offered in the industry standard DQA package. The TPD4S009DGSR and TPD4S010DQAR offer flow-through board layout options to reduce signal glitches normally caused by routing mismatches between the D+ and D– signal pair. See also TPD4E05U06DQAR which is P2P compatible with TPD4S010DQAR. This device offers higher IEC ESD protection, lower capacitance, lower RDYN, lower DC breakdown voltage, and lower clamping voltage.

下載 觀看有字幕稿的影片 影片

技術文件

star =TI 所選的此產品重要文件
找不到結果。請清除您的搜尋條件,然後再試一次。
檢視所有 6
類型 標題 日期
* Data sheet TPD4S009 4-Channel ESD Solution for High-Speed Differential Interface datasheet (Rev. G) PDF | HTML 2015年 6月 26日
User guide Reading and Understanding an ESD Protection Data Sheet (Rev. A) PDF | HTML 2023年 9月 19日
Selection guide System-Level ESD Protection Guide (Rev. D) 2022年 9月 7日
Application note ESD Protection Layout Guide (Rev. A) PDF | HTML 2022年 4月 7日
White paper Designing USB for short-to-battery tolerance in automotive environments 2016年 2月 10日
Analog Design Journal Design Considerations for System-Level ESD Circuit Protection 2012年 9月 25日

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

DRV8353RH-EVM — DRV8353RH 評估模組、三相無刷 DC 智慧型閘極驅動器

The DRV8353RH-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RH gate driver and CSD19532Q5B NexFET™ MOSFETs.

The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)

使用指南: PDF
開發板

DRV8353RS-EVM — DRV8353RS 評估模組、三相無刷 DC 智慧型閘極驅動器

The DRV8353RS-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RS gate driver and CSD19532Q5B NexFET™ MOSFETs.

The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)

使用指南: PDF
TI.com 無法提供
開發板

ESDEVM — ESD 評估模組

靜電敏感裝置 (ESD) 評估模組 (EVM) 是我們大多數 ESD 產品組合的開發平台。此電路板配備所有傳統 ESD 元件封裝,可測試任意數量的裝置。裝置可以焊接到其相應的元件封裝上,然後進行測試。對於一般高速 ESD 二極體,會實作阻抗控制的配置以取得 S 參數並取消內嵌電路板軌跡。對於非高速 ESD 二極體,其元件封裝會包含連接至測試點的軌跡,讓您輕鬆執行 DC 測試,例如崩潰電壓、保持電壓、洩漏等。電路板配置也可以透過將訊號針腳短路到訊號所在的任何地方,讓任何裝置針腳都能輕鬆地連接到電源 (VCC) 或接地。
使用指南: PDF | HTML
TI.com 無法提供
封裝 針腳 CAD 符號、佔位空間與 3D 模型
USON (DQA) 10 Ultra Librarian

訂購與品質

內含資訊:
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊:
  • 晶圓廠位置
  • 組裝地點

建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

內容係由 TI 和社群貢獻者依「現狀」提供,且不構成 TI 規範。檢視使用條款

若有關於品質、封裝或訂購 TI 產品的問題,請參閱 TI 支援。​​​​​​​​​​​​​​

影片