UCC27200-Q1
- AEC-Q100 qualified for automotive applications: device temperature grade 1
- –40°C to +150°C junction temperature range
- Drives two N-channel MOSFETs in high-side and low-side configuration
- Maximum boot voltage: 120V
- Maximum VDD voltage: 20V
- On-chip 0.65V VF, 0.65Ω RD bootstrap diode
- 22ns propagation delay times
- 3A sink, 3A source output currents
- 8ns rise and 7ns fall time with 1000pF load
- 1ns delay matching
The UCC27200-Q1 high frequency N-channel MOSFET drivers includes a 120V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward, and active-clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1ns between the turnon and turnoff of each other.
An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers, forcing the outputs low if the drive voltage is below the specified threshold.
The UCC27200-Q1 has high-noise-immune CMOS input thresholds.
The device is offered in the 8-pin SO PowerPAD™ (DDA) package.
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UCC27200 and UCC27200A TINA-TI Transient Reference Design
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
HSOIC (DDA) | 8 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點