UCC27201A-Q1
- AEC-Q100 qualified for automotive applications: device temperature grade 1
- –40°C to +150°C junction temperature range
- Negative voltage handling on HS: -18V
- Drives two N-channel MOSFETs in high-side/low-side configuration
- Maximum boot voltage: 120V
- Maximum VDD voltage: 20V
- On-chip 0.65V VF, 0.65Ω RD bootstrap diode
- 22ns propagation delay times
- 3A sink, 3A source output currents
- 8ns rise and 7ns fall time with 1000pF load
- 1ns delay matching
- Undervoltage lockout for high-side and low-side driver
- Offered in 8-pin PowerPad™ SOIC-8 (DDA)
The UCC27201A-Q1 high frequency N-Channel MOSFET driver includes a 120V bootstrap diode and high-side/low-side driver with independent inputs for maximum control flexibility. This allows for N-Channel MOSFET control in half-bridge, full-bridge, two-switch forward and active clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1ns between the turn-on and turn-off of each other. In order to improve performance in noisy power supply environments the UCC27201A-Q1 has the ability to withstand an absolute maximum of -18V on its HS pin.
An on-chip bootstrap diode eliminates the external discrete diodes. Under-voltage lockout is provided for both the high-side and the low-side drivers forcing the outputs low if the drive voltage is below the specified threshold.
The UCC27201A-Q1 has TTL-compatible thresholds and is offered in an 8-pin SOIC with a thermal pad.
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封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
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HSOIC (DDA) | 8 | Ultra Librarian |
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