UCC27288

現行

具有 8-V UVLO 且無內部自舉二極體的 2.5-A 至 3.5-A 120-V 半橋驅動器

產品詳細資料

Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 16 Peak output current (A) 3.5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.016 Rise time (ns) 12 Fall time (ns) 10 Iq (mA) 0.002 Input threshold TTL Channel input logic TTL Switch node voltage (V) -14 Features External bootstrap diode Driver configuration Dual inputs
Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 16 Peak output current (A) 3.5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.016 Rise time (ns) 12 Fall time (ns) 10 Iq (mA) 0.002 Input threshold TTL Channel input logic TTL Switch node voltage (V) -14 Features External bootstrap diode Driver configuration Dual inputs
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Drives two N-channel MOSFETs in high-side low-side configuration
  • 16-ns typical propagation delay
  • 12-ns rise, 10-ns typical fall time with 1800-pF load
  • 1-ns typical delay matching
  • Configurable external bootstrap diode
  • 8-V typical undervoltage lockout
  • Absolute maximum negative voltage handling on inputs (–5 V)
  • Absolute maximum negative voltage handling on HS (–14 V)
  • ±3-A peak output current
  • Absolute maximum boot voltage 120 V
  • Inputs are independent of each other and VDD
  • Under voltage lockout for both channels
  • Specified from –40°C to 140°C junction temperature
  • Drives two N-channel MOSFETs in high-side low-side configuration
  • 16-ns typical propagation delay
  • 12-ns rise, 10-ns typical fall time with 1800-pF load
  • 1-ns typical delay matching
  • Configurable external bootstrap diode
  • 8-V typical undervoltage lockout
  • Absolute maximum negative voltage handling on inputs (–5 V)
  • Absolute maximum negative voltage handling on HS (–14 V)
  • ±3-A peak output current
  • Absolute maximum boot voltage 120 V
  • Inputs are independent of each other and VDD
  • Under voltage lockout for both channels
  • Specified from –40°C to 140°C junction temperature

The UCC27288 is a robust N-channel MOSFET driver with a maximum switch node (HS) voltage rating of 100 V. It allows for two N-channel MOSFETs to be controlled in half-bridge or synchronous buck configuration based topologies. Its 3-A peak source and sink current along with low pull-up and pull-down resistance allows the UCC27288 to drive large power MOSFETs with minimum switching losses during the transition of the MOSFET Miller plateau. Since the inputs are independent of the supply voltage, UCC27288 can be used in conjunction with both analog and digital controllers. Two inputs are completely independent of each other and therefore provides added control design flexibility.

The input pins as well as the HS pin are able to tolerate significant negative voltage, which improves system robustness. The inputs are completely independent of each other. This allows for control flexibility where two outputs can be overlapped by overlapping inputs if needed. Small propagation delay and delay matching specifications minimize the dead-time requirement which improves system efficiency.

Under voltage lockout (UVLO) is provided for both the high-side and low-side driver stages forcing the outputs low if the VDD voltage is below the specified threshold. No integrated bootstrap diode allows user to use application-appropriate external bootstrap diode. UCC27288 is offered in an SOIC8 package to improve system robustness in harsh environments.

The UCC27288 is a robust N-channel MOSFET driver with a maximum switch node (HS) voltage rating of 100 V. It allows for two N-channel MOSFETs to be controlled in half-bridge or synchronous buck configuration based topologies. Its 3-A peak source and sink current along with low pull-up and pull-down resistance allows the UCC27288 to drive large power MOSFETs with minimum switching losses during the transition of the MOSFET Miller plateau. Since the inputs are independent of the supply voltage, UCC27288 can be used in conjunction with both analog and digital controllers. Two inputs are completely independent of each other and therefore provides added control design flexibility.

The input pins as well as the HS pin are able to tolerate significant negative voltage, which improves system robustness. The inputs are completely independent of each other. This allows for control flexibility where two outputs can be overlapped by overlapping inputs if needed. Small propagation delay and delay matching specifications minimize the dead-time requirement which improves system efficiency.

Under voltage lockout (UVLO) is provided for both the high-side and low-side driver stages forcing the outputs low if the VDD voltage is below the specified threshold. No integrated bootstrap diode allows user to use application-appropriate external bootstrap diode. UCC27288 is offered in an SOIC8 package to improve system robustness in harsh environments.

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* Data sheet UCC27288 3-A 120-V Half-Bridge Driver with 8-V UVLO and External Bootstrap Diode datasheet (Rev. B) PDF | HTML 2022年 4月 22日
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 2024年 3月 25日
Application note Understanding and comparing peak current capability of gate drivers PDF | HTML 2021年 3月 30日
EVM User's guide Using the UCC27288EVM 2020年 6月 16日
Certificate UCC27288EVM EU Declaration of Conformity (DoC) 2020年 5月 13日
Application note Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 2020年 5月 12日
Application brief External Gate Resistor Selection Guide (Rev. A) 2020年 2月 28日
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020年 2月 28日

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UCC27288EVM — UCC27288 100-V、3-A、8-V UVLO 半橋閘極驅動器評估模組

UCC27288EVM is designed for evaluating UCC27288D, which is a 100-V half bridge gate driver with 2.5-A peak source current and 3.5-A peak sink current capability. This EVM serves as a reference design for driving power MOSFETs with up to 20-V drive voltage.
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