UCC27311A-Q1

現行

具有 8V UVLO 和啟用功能的車用 120V 4A 半橋閘極驅動器

產品詳細資料

Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 4 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Enable, Negative voltage handling TI functional safety category Functional Safety-Capable Driver configuration Dual, Noninverting, TTL compatible
Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 4 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Enable, Negative voltage handling TI functional safety category Functional Safety-Capable Driver configuration Dual, Noninverting, TTL compatible
VSON (DRC) 10 9 mm² 3 x 3
  • Drives two N-channel MOSFETs in half-bridge configuration
  • AEC-Q100 qualified for automotive applications:
    • Device temperature grade 1
  • –40°C to +150°C junction temperature range
  • 120V abs max voltage on HB pin
  • 3.7A sink, 4.5A source output currents
  • 8V to 17V VDD operating range (20V abs max) with UVLO
  • –(28–VDD)V abs max negative transient tolerance on HS pin (<100ns pulse)
  • –10V to +20V abs max input pins tolerance, independent of supply voltage range (TTL compatible)
  • Switching parameters:
    • 20ns typical propagation delay times
    • 7.2ns rise and 5.5ns fall time with 1000pF load
    • 4ns typical delay matching
  • Integrated bootstrap diode
  • Enable/disable functionality with low current consumption (3µA typical) when disabled
  • Functional Safety-Capable
  • Drives two N-channel MOSFETs in half-bridge configuration
  • AEC-Q100 qualified for automotive applications:
    • Device temperature grade 1
  • –40°C to +150°C junction temperature range
  • 120V abs max voltage on HB pin
  • 3.7A sink, 4.5A source output currents
  • 8V to 17V VDD operating range (20V abs max) with UVLO
  • –(28–VDD)V abs max negative transient tolerance on HS pin (<100ns pulse)
  • –10V to +20V abs max input pins tolerance, independent of supply voltage range (TTL compatible)
  • Switching parameters:
    • 20ns typical propagation delay times
    • 7.2ns rise and 5.5ns fall time with 1000pF load
    • 4ns typical delay matching
  • Integrated bootstrap diode
  • Enable/disable functionality with low current consumption (3µA typical) when disabled
  • Functional Safety-Capable

The UCC27311A-Q1 is a robust gate driver designed to drive two N-channel MOSFETs in a half-bridge or synchronous buck configuration with an absolute maximum bootstrap voltage of 120V. Its 3.7A peak source and 4.5A peak sink current capability allows the UCC27311A-Q1 to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.

The inputs are independent of supply voltage and are able to withstand -10V and +20V absolute maximum ratings. The low-side and high-side gate drivers are matched to 4ns between the turn on and turn off of each other and are controlled throught the LI and HI input pins respectively. An on-chip 120V rated bootstrap diode eliminates the need to add discrete bootstrap diodes. Undervoltage lockout (UVLO) is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.

The UCC27311A-Q1 is a robust gate driver designed to drive two N-channel MOSFETs in a half-bridge or synchronous buck configuration with an absolute maximum bootstrap voltage of 120V. Its 3.7A peak source and 4.5A peak sink current capability allows the UCC27311A-Q1 to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.

The inputs are independent of supply voltage and are able to withstand -10V and +20V absolute maximum ratings. The low-side and high-side gate drivers are matched to 4ns between the turn on and turn off of each other and are controlled throught the LI and HI input pins respectively. An on-chip 120V rated bootstrap diode eliminates the need to add discrete bootstrap diodes. Undervoltage lockout (UVLO) is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.

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類型 標題 日期
* Data sheet UCC27311A-Q1 Automotive 120V, 3.7A/4.5A Half-Bridge Driver with 8V UVLO and Enable datasheet (Rev. B) PDF | HTML 2024年 7月 23日
Functional safety information UCC273x1A-Q1 Functional Safety FIT Rate, FMD and Pin FMA PDF | HTML 2024年 9月 30日
Application note Selecting Gate Drivers for HVAC Systems PDF | HTML 2024年 4月 4日
Application note Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 2024年 1月 24日

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