SLVAFH0 December 2023 CSD13201W10 , CSD13302W , CSD13303W1015 , CSD13306W , CSD13380F3 , CSD13381F4 , CSD13383F4 , CSD13385F5 , CSD15380F3 , CSD17381F4 , CSD17382F4 , CSD17483F4 , CSD17484F4 , CSD17585F5 , CSD18541F5 , CSD22202W15 , CSD22204W , CSD22205L , CSD22206W , CSD23202W10 , CSD23203W , CSD23280F3 , CSD23285F5 , CSD23381F4 , CSD23382F4 , CSD25202W15 , CSD25211W1015 , CSD25213W10 , CSD25304W1015 , CSD25480F3 , CSD25481F4 , CSD25483F4 , CSD25484F4 , CSD25485F5 , CSD25501F3 , CSD75207W15 , CSD75208W1015 , CSD83325L , CSD85302L , CSD86311W1723 , CSD87501L
In 2013, TI introduced P and N-channel MOSFETs in the F4 FemtoFET™ LGA package. Since then, two more packages, F3 and F5, and numerous devices have filled out the FemtoFET™ product portfolio. Additionally, LGA technology has been extended to include single and dual FETs for multiple applications where small size and high performance are advantageous. Figure 2-1 and Figure 2-2 shows illustrations of the F4 and F5 FemtoFET™ devices.