TLC27M9

AKTIV

Präziser energieeffizienter Vierfach-Operationsverstärker, Single Supply

Eine neuere Version dieses Produkts ist verfügbar

Dieses Produkt ist weiterhin für Bestandskunden erhältlich. Neue Designs sollten ein alternatives Produkt erwägen.
Selbe Funktionalität wie der verglichene Baustein bei abweichender Anschlussbelegung
TLV9104 AKTIV Energieeffizienter (0,12 mA) Vierfach-Operationsverstärker, 16 V, 1,1 MHz Lower offset voltage (1.5mV), lower power (0.12mA), lower noise (30nV/√Hz), wider temp range (-40°C to 125°C)

Produktdetails

Number of channels 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 3 Vos (offset voltage at 25°C) (max) (mV) 0.9 GBW (typ) (MHz) 0.525 Slew rate (typ) (V/µs) 0.46 Rail-to-rail In to V- Offset drift (typ) (µV/°C) 1.7 Iq per channel (typ) (mA) 0.105 Vn at 1 kHz (typ) (nV√Hz) 32 CMRR (typ) (dB) 91 Rating Catalog Operating temperature range (°C) -40 to 85 Input bias current (max) (pA) 60 Iout (typ) (A) 0.008 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -0.8 Output swing headroom (to negative supply) (typ) (V) 0 Output swing headroom (to positive supply) (typ) (V) -1.1
Number of channels 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 3 Vos (offset voltage at 25°C) (max) (mV) 0.9 GBW (typ) (MHz) 0.525 Slew rate (typ) (V/µs) 0.46 Rail-to-rail In to V- Offset drift (typ) (µV/°C) 1.7 Iq per channel (typ) (mA) 0.105 Vn at 1 kHz (typ) (nV√Hz) 32 CMRR (typ) (dB) 91 Rating Catalog Operating temperature range (°C) -40 to 85 Input bias current (max) (pA) 60 Iout (typ) (A) 0.008 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -0.8 Output swing headroom (to negative supply) (typ) (V) 0 Output swing headroom (to positive supply) (typ) (V) -1.1
  • Trimmed Offset Voltage:
    TLC27M9...900 uV Max at TA = 25°C,
    VDD = 5 V
  • Input Offset Voltage Drift...Typically
    0.1 uV/Month, Including the First 30 Days
  • Wide Range of Supply Voltages Over Specified Temperature Range:
    0°C to 70°C...3 V to 16 V
    -40°C to 85°C...4 V to 16 V
    -55°C to 125°C...4 V to 16 V
  • Single-Supply Operation
  • Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix, I-Suffix Types)
  • Low Noise...Typically 32 nV/ Hz\
    at f = 1 kHz
  • Low Power...Typically 2.1 mW at TA=25°C, VDD = 5 V
  • Output Voltage Range Includes Negative Rail
  • High Input Impedance...1012 Typ
  • ESD-Protection Circuitry
  • Small-Outline Package Option Also Available in Tape and Reel
  • Designed-In Latch-Up Immunity
  • Trimmed Offset Voltage:
    TLC27M9...900 uV Max at TA = 25°C,
    VDD = 5 V
  • Input Offset Voltage Drift...Typically
    0.1 uV/Month, Including the First 30 Days
  • Wide Range of Supply Voltages Over Specified Temperature Range:
    0°C to 70°C...3 V to 16 V
    -40°C to 85°C...4 V to 16 V
    -55°C to 125°C...4 V to 16 V
  • Single-Supply Operation
  • Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix, I-Suffix Types)
  • Low Noise...Typically 32 nV/ Hz\
    at f = 1 kHz
  • Low Power...Typically 2.1 mW at TA=25°C, VDD = 5 V
  • Output Voltage Range Includes Negative Rail
  • High Input Impedance...1012 Typ
  • ESD-Protection Circuitry
  • Small-Outline Package Option Also Available in Tape and Reel
  • Designed-In Latch-Up Immunity

The TLC27M4 and TLC27M9 quad operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds comparable to that of general-purpose bipolar devices.These devices use Texas Instruments silicon-gate LinCMOSTM

LinCMOS is a trademark of Texas Instruments Incorporated. technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

The extremely high input impedance, low bias currents, make these cost-effective devices ideal for applications that have previously been reserved for general-purpose bipolar products, but with only a fraction of the power consumption.

Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27M4 (10 mV) to the high-precision TLC27M9 (900 uV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.

In general, many features associated with bipolar technology are available on LinCMOSTM operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC27M4 and TLC27M9. The devices also exhibit low voltage single-supply operation, and low power consumption, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.

A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density system applications.

The device inputs and outputs are designed to withstand -100-mA surge currents without sustaining latch-up.

The TLC27M4 and TLC27M9 incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015; however, care should be exercised in handling these devices, as exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.

AVAILABLE OPTIONS
TA

VIOmax
AT 25°C
PACKAGE
CHIP
FORM
(Y)
SMALL OUTLINE
(D)
CHIP CARRIER
(FK)
CERAMIC DIP
(J)
PLASTIC DIP
(N)
TSSOP
(PW)
0°C to 70°C
900 uV
TLC27M9CD
--
--
TLC27M9CN
--
--
2 mV
TLC27M4BCD
--
--
TLC27M4BCN
--
--
5 mV
TLC27M4ACD
--
--
TLC27M4ACN
--
--
10 mV
TLC27M4CD
--
--
TLC27M4CN
TLC27M4CPW
TLC27M4Y
-40°C to 85°C
900 uV
TLC27M9ID
--
--
TLC27M9IN
--
--
2 mV
TLC27M4BID
--
--
TLC27M4BIN
--
--
5 mV
TLC27M4AID
--
--
TLC27M4AIN
--
--
10 mV
TLC27M4ID
--
--
TLC27M4IN
TLC27M41PW
--
-55°C to 125°C
900 uV
TLC27M9MD
TLC27M9MFK
TLC27M9MJ
TLC27M9MN
--
--
10 mV
TLC27M4MD
TLC27M4MFK
TLC27M4MJ
TLC27M4MN
--
--

The D and PW package is available taped and reeled. Add R suffix to the device type (e.g., TLC279CDR).

The TLC27M4 and TLC27M9 quad operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds comparable to that of general-purpose bipolar devices.These devices use Texas Instruments silicon-gate LinCMOSTM

LinCMOS is a trademark of Texas Instruments Incorporated. technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

The extremely high input impedance, low bias currents, make these cost-effective devices ideal for applications that have previously been reserved for general-purpose bipolar products, but with only a fraction of the power consumption.

Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27M4 (10 mV) to the high-precision TLC27M9 (900 uV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.

In general, many features associated with bipolar technology are available on LinCMOSTM operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC27M4 and TLC27M9. The devices also exhibit low voltage single-supply operation, and low power consumption, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.

A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density system applications.

The device inputs and outputs are designed to withstand -100-mA surge currents without sustaining latch-up.

The TLC27M4 and TLC27M9 incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015; however, care should be exercised in handling these devices, as exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.

AVAILABLE OPTIONS
TA

VIOmax
AT 25°C
PACKAGE
CHIP
FORM
(Y)
SMALL OUTLINE
(D)
CHIP CARRIER
(FK)
CERAMIC DIP
(J)
PLASTIC DIP
(N)
TSSOP
(PW)
0°C to 70°C
900 uV
TLC27M9CD
--
--
TLC27M9CN
--
--
2 mV
TLC27M4BCD
--
--
TLC27M4BCN
--
--
5 mV
TLC27M4ACD
--
--
TLC27M4ACN
--
--
10 mV
TLC27M4CD
--
--
TLC27M4CN
TLC27M4CPW
TLC27M4Y
-40°C to 85°C
900 uV
TLC27M9ID
--
--
TLC27M9IN
--
--
2 mV
TLC27M4BID
--
--
TLC27M4BIN
--
--
5 mV
TLC27M4AID
--
--
TLC27M4AIN
--
--
10 mV
TLC27M4ID
--
--
TLC27M4IN
TLC27M41PW
--
-55°C to 125°C
900 uV
TLC27M9MD
TLC27M9MFK
TLC27M9MJ
TLC27M9MN
--
--
10 mV
TLC27M4MD
TLC27M4MFK
TLC27M4MJ
TLC27M4MN
--
--

The D and PW package is available taped and reeled. Add R suffix to the device type (e.g., TLC279CDR).

Herunterladen

Technische Dokumentation

star =Von TI ausgewählte Top-Empfehlungen für dieses Produkt
Keine Ergebnisse gefunden. Bitte geben Sie einen anderen Begriff ein und versuchen Sie es erneut.
Alle anzeigen 1
Typ Titel Datum
* Data sheet LinCMOS Precision Quad Op Amps datasheet (Rev. D) 11 Okt 2012

Bestellen & Qualität

Beinhaltete Information:
  • RoHS
  • REACH
  • Bausteinkennzeichnung
  • Blei-Finish/Ball-Material
  • MSL-Rating / Spitzenrückfluss
  • MTBF-/FIT-Schätzungen
  • Materialinhalt
  • Qualifikationszusammenfassung
  • Kontinuierliches Zuverlässigkeitsmonitoring
Beinhaltete Information:
  • Werksstandort
  • Montagestandort

Support und Schulungen

TI E2E™-Foren mit technischem Support von TI-Ingenieuren

Inhalte werden ohne Gewähr von TI und der Community bereitgestellt. Sie stellen keine Spezifikationen von TI dar. Siehe Nutzungsbedingungen.

Bei Fragen zu den Themen Qualität, Gehäuse oder Bestellung von TI-Produkten siehe TI-Support. ​​​​​​​​​​​​​​

Videos