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LMH5401-SP

ACTIVO

Amplificador completamente diferencial de 6.5 GHz y banda ultra ancha con dureza de radiación garant

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LMH5401-SP

ACTIVO
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Detalles del producto

Current consumption (mA) 60 Frequency (min) (MHz) 0 Frequency (max) (MHz) 6500 Gain (typ) (dB) 12 Noise figure (typ) (dB) 9.6 OIP3 (typ) (dBm) 47.7 P1dB (typ) (dBm) 12 Number of channels 1 Operating temperature range (°C) -55 to 125 Type Active Balun, RF FDA Rating Space
Current consumption (mA) 60 Frequency (min) (MHz) 0 Frequency (max) (MHz) 6500 Gain (typ) (dB) 12 Noise figure (typ) (dB) 9.6 OIP3 (typ) (dBm) 47.7 P1dB (typ) (dBm) 12 Number of channels 1 Operating temperature range (°C) -55 to 125 Type Active Balun, RF FDA Rating Space
LCCC-FC (FFK) 14 33 mm² 6 x 5.5
  • QMLV (QML class V) MIL-PRF-38535 qualified, SMD 5962R1721401VXC
    • Radiation hardness assurance (RHA) up to 100-krad(Si) total ionizing dose (TID)
    • Single event latch-up (SEL) immune to
      LET = 85 MeV-cm2/mg
    • Qualified over the military temperature range (–55°C to 125°C)
  • Gain bandwidth product (GBP): 6.5 GHz
  • Excellent linearity performance:
    DC to 2 GHz
  • Slew rate: 17,500 V/µs
  • Low HD2, HD3 distortion
    (500 mVPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 100 MHz: HD2 at –91 dBc, HD3 at –95 dBc
    • 200 MHz: HD2 at –86 dBc, HD3 at –85 dBc
    • 500 MHz: HD2 at –80 dBc, HD3 at –80 dBc
    • 1 GHz: HD2 at –53 dBc, HD3 at –70 dBc
    • 2 GHz: HD2 at –68 dBc, HD3 at –56 dBc
  • Low IMD2, IMD3 distortion
    (1 VPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 500 MHz: IMD2 at –90 dBc, IMD3 at –79 dBc
    • 1 GHz: IMD2 at –80 dBc, IMD3 at –61 dBc
    • 2 GHz: IMD2 at –64 dBc, IMD3 at –42 dBc
  • High OIP2, OIP3. Gp = 8 dB(1)
    • 500 MHz: OIP2 at 91 dBm, OIP3 at 47.7 dBm
    • 1 GHz: OIP2 at 80 dBm, OIP3 at 37.5 dBm
  • Input voltage noise: 1.25 nV/√Hz
  • Input current noise: 3.5 pA/√Hz
  • Supports single- and dual-supply operation
  • Current consumption: 60 mA
  • Power-down feature (1)

(1)Power Gain (Gp) = 8 dB; Voltage Gain (Gv) = 17 dB; RLtotal = 200 Ω. See Output Reference Nodes and Gain Nomenclature section for more details.
  • QMLV (QML class V) MIL-PRF-38535 qualified, SMD 5962R1721401VXC
    • Radiation hardness assurance (RHA) up to 100-krad(Si) total ionizing dose (TID)
    • Single event latch-up (SEL) immune to
      LET = 85 MeV-cm2/mg
    • Qualified over the military temperature range (–55°C to 125°C)
  • Gain bandwidth product (GBP): 6.5 GHz
  • Excellent linearity performance:
    DC to 2 GHz
  • Slew rate: 17,500 V/µs
  • Low HD2, HD3 distortion
    (500 mVPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 100 MHz: HD2 at –91 dBc, HD3 at –95 dBc
    • 200 MHz: HD2 at –86 dBc, HD3 at –85 dBc
    • 500 MHz: HD2 at –80 dBc, HD3 at –80 dBc
    • 1 GHz: HD2 at –53 dBc, HD3 at –70 dBc
    • 2 GHz: HD2 at –68 dBc, HD3 at –56 dBc
  • Low IMD2, IMD3 distortion
    (1 VPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 500 MHz: IMD2 at –90 dBc, IMD3 at –79 dBc
    • 1 GHz: IMD2 at –80 dBc, IMD3 at –61 dBc
    • 2 GHz: IMD2 at –64 dBc, IMD3 at –42 dBc
  • High OIP2, OIP3. Gp = 8 dB(1)
    • 500 MHz: OIP2 at 91 dBm, OIP3 at 47.7 dBm
    • 1 GHz: OIP2 at 80 dBm, OIP3 at 37.5 dBm
  • Input voltage noise: 1.25 nV/√Hz
  • Input current noise: 3.5 pA/√Hz
  • Supports single- and dual-supply operation
  • Current consumption: 60 mA
  • Power-down feature (1)

(1)Power Gain (Gp) = 8 dB; Voltage Gain (Gv) = 17 dB; RLtotal = 200 Ω. See Output Reference Nodes and Gain Nomenclature section for more details.

The LMH5401-SP is a very high-performance, radiation hardened, differential amplifier optimized for radio frequency (RF), intermediate frequency (IF), or high-speed, dc-coupled, time-domain applications. The device is ideal for dc- or ac-coupled applications that may require a single-ended-to-differential (SE-DE) conversion when driving an analog-to-digital converter (ADC). The LMH5401-SP generates very low levels of second- and third-order distortion when operating in SE-DE or differential-to-differential (DE-DE) mode.



The amplifier is optimized for use in both SE-DE and DE-DE systems. The device has unprecedented usable bandwidth from dc to 2 GHz. The LMH5401-SP can be used for SE-DE conversions in the signal chain without external baluns in a wide range of applications such as test and measurement, broadband communications, and high-speed data acquisition.

A common-mode reference input pin is provided to align the amplifier output common-mode with the ADC input requirements. Power supplies between 3.3 V and 5 V can be selected and dual-supply operation is supported when required by the application. A power-down feature is also available for power savings.

This level of performance is achieved at a very low power level of 300 mW when a 5-V supply is used. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, LCCC-14 package for higher performance.

The LMH5401-SP is a very high-performance, radiation hardened, differential amplifier optimized for radio frequency (RF), intermediate frequency (IF), or high-speed, dc-coupled, time-domain applications. The device is ideal for dc- or ac-coupled applications that may require a single-ended-to-differential (SE-DE) conversion when driving an analog-to-digital converter (ADC). The LMH5401-SP generates very low levels of second- and third-order distortion when operating in SE-DE or differential-to-differential (DE-DE) mode.



The amplifier is optimized for use in both SE-DE and DE-DE systems. The device has unprecedented usable bandwidth from dc to 2 GHz. The LMH5401-SP can be used for SE-DE conversions in the signal chain without external baluns in a wide range of applications such as test and measurement, broadband communications, and high-speed data acquisition.

A common-mode reference input pin is provided to align the amplifier output common-mode with the ADC input requirements. Power supplies between 3.3 V and 5 V can be selected and dual-supply operation is supported when required by the application. A power-down feature is also available for power savings.

This level of performance is achieved at a very low power level of 300 mW when a 5-V supply is used. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, LCCC-14 package for higher performance.
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Documentación técnica

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* Data sheet LMH5401-SP radiation hardened 6.5-GHz, low-noise, low-power, gain-configurable fully differential amplifier datasheet (Rev. B) PDF | HTML 28 feb 2019
* Radiation & reliability report Single-Event Effects Test Report of the LMH5401-SP (Rev. B) 26 nov 2018
* Radiation & reliability report LMH5401-SP (5962R1721401VXC) Neutron Displacement Damage Characterization 07 sep 2018
* Radiation & reliability report LMH5401-SP TID Radiation Report (Rev. A) 31 jul 2018
* SMD LMH5401-SP SMD 5962-17214 03 may 2018
Application brief DLA Approved Optimizations for QML Products (Rev. B) PDF | HTML 17 may 2024
Selection guide TI Space Products (Rev. J) 12 feb 2024
More literature TI Engineering Evaluation Units vs. MIL-PRF-38535 QML Class V Processing (Rev. A) 31 ago 2023
Application note Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. A) PDF | HTML 17 nov 2022
Application note Single-Event Effects Confidence Interval Calculations (Rev. A) PDF | HTML 19 oct 2022
Application brief Analog Front-End Design With Texas Instruments’ Tooling Landscape PDF | HTML 07 mar 2022
Application note Rad-hardened FDA as Clock Buffer in Communication and Radar Payloads (Rev. A) 02 ago 2019
E-book Radiation Handbook for Electronics (Rev. A) 21 may 2019
User guide TSW12D1620EVM-CVAL User's Guide (Rev. A) 29 ene 2019
EVM User's guide LMH5401EVM-CVAL Evaluation Module (EVM) (Rev. A) 21 sep 2018

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

LMH5401EVM-CVAL — Módulo de evaluación LMH5401-SP de amplificador completamente diferencial de banda ancha con dureza

The LMH5401EVM-CVAL is an evaluation module for the single LMH5401FFK/EM amplifier in a 14 pin LCCC high performance RF package. This evaluation module is designed to quickly and easily demonstrate the functionality and versatility of the amplifier.

The EVM is ready to connect to power, signal (...)

Guía del usuario: PDF
No disponible en TI.com
Placa de evaluación

TSW12D1620EVM-CVAL — Módulo de evaluación de receptor de banda ancha de calidad espacial ADC12D1620QML-SP

The TSW12D1620EVM-CVAL is a 1.5-GHz wideband receiver evaluation module (EVM) that includes ceramic engineering models of the amplifier, analog-to-digital converter (ADC), clocking, temperature sensor, microcontroller, and power solution. The board is best suited for (...)

Guía del usuario: PDF
No disponible en TI.com
Modelo de simulación

LMH5401-SP TINA-TI Reference Design

SBOMAM1.TSC (382 KB) - TINA-TI Reference Design
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Modelo de simulación

LMH5401-SP TINA-TI Spice Model

SBOMAM0.ZIP (10 KB) - TINA-TI Spice Model
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Diseños de referencia

TIDA-010191 — Diseño de referencia de sincronización de 15 GHz JESD204B multicanal de grado espacial

Las antenas de matriz en fase y la formación de haces digital son tecnologías clave que impulsarán el rendimiento de los futuros sistemas de comunicación por satélite de banda ancha y de imágenes de radar a bordo de vehículos espaciales. La formación de haces digital, a diferencia de la formación (...)
Design guide: PDF
Encapsulado Pines Símbolos CAD, huellas y modelos 3D
LCCC-FC (FFK) 14 Ultra Librarian
Se aplican los Términos y condiciones estándar de TI para los elementos de evaluación.

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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Soporte y capacitación

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