OPA657-DIE

활성

베어-다이 1.6GHz, 저잡음, FET 입력 연산 증폭기

제품 상세 정보

Architecture FET / CMOS Input, Voltage FB Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 8 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 12 GBW (typ) (MHz) 1600 BW at Acl (MHz) 350 Acl, min spec gain (V/V) 7 Slew rate (typ) (V/µs) 700 Vn at flatband (typ) (nV√Hz) 4.8 Vn at 1 kHz (typ) (nV√Hz) 7 Iq per channel (typ) (mA) 14 Vos (offset voltage at 25°C) (max) (mV) 1.8 Rail-to-rail No Features Decompensated Rating Catalog Operating temperature range (°C) -40 to 85 CMRR (typ) (dB) 89 Input bias current (max) (pA) 20 Offset drift (typ) (µV/°C) 2 Iout (typ) (mA) 70 2nd harmonic (dBc) 74 3rd harmonic (dBc) 106 Frequency of harmonic distortion measurement (MHz) 5
Architecture FET / CMOS Input, Voltage FB Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 8 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 12 GBW (typ) (MHz) 1600 BW at Acl (MHz) 350 Acl, min spec gain (V/V) 7 Slew rate (typ) (V/µs) 700 Vn at flatband (typ) (nV√Hz) 4.8 Vn at 1 kHz (typ) (nV√Hz) 7 Iq per channel (typ) (mA) 14 Vos (offset voltage at 25°C) (max) (mV) 1.8 Rail-to-rail No Features Decompensated Rating Catalog Operating temperature range (°C) -40 to 85 CMRR (typ) (dB) 89 Input bias current (max) (pA) 20 Offset drift (typ) (µV/°C) 2 Iout (typ) (mA) 70 2nd harmonic (dBc) 74 3rd harmonic (dBc) 106 Frequency of harmonic distortion measurement (MHz) 5
DIESALE (TD) See data sheet
  • High Gain Bandwidth Product: 1.6 GHz
  • High Bandwidth 275 MHz (G = 10)
  • Slew Rate 700 V/µs (G = 10, 1-V Step)
  • Low-Input Offset Voltage: ±250 µV
  • Low-Input Bias Current: 2 pA
  • Low-Input Voltage Noise: 4.8 nV/√Hz
  • High-Output Current: 70 mA
  • Fast Overdrive Recovery
  • High Gain Bandwidth Product: 1.6 GHz
  • High Bandwidth 275 MHz (G = 10)
  • Slew Rate 700 V/µs (G = 10, 1-V Step)
  • Low-Input Offset Voltage: ±250 µV
  • Low-Input Bias Current: 2 pA
  • Low-Input Voltage Noise: 4.8 nV/√Hz
  • High-Output Current: 70 mA
  • Fast Overdrive Recovery

The OPA657 device combines a high gain-bandwidth, low-distortion, voltage-feedback operational amplifier with a low voltage noise JFET-input stage to offer a very high dynamic range amplifier for high-precision analog-to-digital converter (ADC) driving or wideband transimpedance applications. Photodiode applications achieve improved noise and bandwidth using this decompensated, high gain-bandwidth amplifier.

Very low level signals can be significantly amplified in a single OPA657 gain stage with exceptional bandwidth and accuracy. The very low input bias current and capacitance supports this performance even for relatively high source impedance. Broadband photodetector applications benefit from the low voltage noise JFET inputs for the OPA657. The JFET input contributes virtually no current noise, which makes the device ideal for high-gain photodiode applications.

The OPA657 device combines a high gain-bandwidth, low-distortion, voltage-feedback operational amplifier with a low voltage noise JFET-input stage to offer a very high dynamic range amplifier for high-precision analog-to-digital converter (ADC) driving or wideband transimpedance applications. Photodiode applications achieve improved noise and bandwidth using this decompensated, high gain-bandwidth amplifier.

Very low level signals can be significantly amplified in a single OPA657 gain stage with exceptional bandwidth and accuracy. The very low input bias current and capacitance supports this performance even for relatively high source impedance. Broadband photodetector applications benefit from the low voltage noise JFET inputs for the OPA657. The JFET input contributes virtually no current noise, which makes the device ideal for high-gain photodiode applications.

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* Data sheet OPA657-DIE 1.6-GHz, Low-Noise, FET-Input Operational Amplifier datasheet PDF | HTML 2016/08/10

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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