홈 증폭기 연산 증폭기 (op amps) 정밀 연산 증폭기(Vos<1mV)
홈
증폭기
연산 증폭기 (op amps)
정밀 연산 증폭기(Vos<1mV)

TLE2021M-MIL

활성

고속, 저전력, 정밀 단일 연산 증폭기

지금 주문
데이터 시트

TLE2021M-MIL

활성
데이터 시트 지금 주문

제품 상세 정보

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4 Vos (offset voltage at 25°C) (max) (mV) 0.6 Offset drift (typ) (µV/°C) 2 Input bias current (max) (pA) 70000 GBW (typ) (MHz) 1.7 Slew rate (typ) (V/µs) 0.5 Rail-to-rail In to V- Iq per channel (typ) (mA) 0.17 Vn at 1 kHz (typ) (nV√Hz) 17 CMRR (typ) (dB) 110 Rating Military Operating temperature range (°C) -55 to 125 Iout (typ) (A) 0.003 Architecture Bipolar Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -1 Output swing headroom (to negative supply) (typ) (V) 0.7 Output swing headroom (to positive supply) (typ) (V) -0.7
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4 Vos (offset voltage at 25°C) (max) (mV) 0.6 Offset drift (typ) (µV/°C) 2 Input bias current (max) (pA) 70000 GBW (typ) (MHz) 1.7 Slew rate (typ) (V/µs) 0.5 Rail-to-rail In to V- Iq per channel (typ) (mA) 0.17 Vn at 1 kHz (typ) (nV√Hz) 17 CMRR (typ) (dB) 110 Rating Military Operating temperature range (°C) -55 to 125 Iout (typ) (A) 0.003 Architecture Bipolar Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -1 Output swing headroom (to negative supply) (typ) (V) 0.7 Output swing headroom (to positive supply) (typ) (V) -0.7
CDIP (JG) 8 64.032 mm² 9.6 x 6.67
  • Supply Current . . . 300 µA Max
  • High Unity-Gain Bandwidth . . . 2 MHz Typ
  • High Slew Rate . . . 0.45 V/µs Min
  • Supply-Current Change Over Military Temp
    Range . . . 10 µA Typ at VCC ± = ± 15 V
  • Specified for Both 5-V Single-Supply and ±15-V Operation
  • Phase-Reversal Protection
  • High Open-Loop Gain . . . 6.5 V/µV (136 dB) Typ
  • Low Offset Voltage . . . 100 µV Max
  • Offset Voltage Drift With Time
    0.005 µV/mo Typ
  • Low Input Bias Current . . . 50 nA Max
  • Low Noise Voltage . . . 19 nV/√Hz Typ

All trademarks are the property of their respective owners.
  • Supply Current . . . 300 µA Max
  • High Unity-Gain Bandwidth . . . 2 MHz Typ
  • High Slew Rate . . . 0.45 V/µs Min
  • Supply-Current Change Over Military Temp
    Range . . . 10 µA Typ at VCC ± = ± 15 V
  • Specified for Both 5-V Single-Supply and ±15-V Operation
  • Phase-Reversal Protection
  • High Open-Loop Gain . . . 6.5 V/µV (136 dB) Typ
  • Low Offset Voltage . . . 100 µV Max
  • Offset Voltage Drift With Time
    0.005 µV/mo Typ
  • Low Input Bias Current . . . 50 nA Max
  • Low Noise Voltage . . . 19 nV/√Hz Typ

All trademarks are the property of their respective owners.

The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth.

The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.

The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. This means that a precision device remains a precision device even with changes in temperature and over years of use.

This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices the ideal choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs goes below the negative supply rail.

A variety of available options includes small-outline and chip-carrier versions for high-density systems applications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth.

The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.

The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. This means that a precision device remains a precision device even with changes in temperature and over years of use.

This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices the ideal choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs goes below the negative supply rail.

A variety of available options includes small-outline and chip-carrier versions for high-density systems applications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.
filter 기타 정밀 연산 증폭기(Vos<1mV) 찾기
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기술 자료

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* Data sheet Excalibur High-Speed Low-Power Precision Operational Amplifiers. datasheet (Rev. D) 2010/11/24

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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