홈 증폭기 연산 증폭기 (op amps) 범용 연산 증폭기
홈
증폭기
연산 증폭기 (op amps)
범용 연산 증폭기

TLE2024-Q1

활성

오토모티브 고속 저전력 정밀 연산 증폭기

지금 주문
데이터 시트

TLE2024-Q1

활성
데이터 시트 지금 주문

제품 상세 정보

Number of channels 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4 Rail-to-rail In to V- GBW (typ) (MHz) 1.7 Slew rate (typ) (V/µs) 0.5 Vos (offset voltage at 25°C) (max) (mV) 1.1 Iq per channel (typ) (mA) 0.2 Vn at 1 kHz (typ) (nV√Hz) 17 Rating Automotive Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 2 Input bias current (max) (pA) 70000 CMRR (typ) (dB) 90 Iout (typ) (A) 0.003 Architecture Bipolar Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -1 Output swing headroom (to negative supply) (typ) (V) 0.7 Output swing headroom (to positive supply) (typ) (V) -0.7
Number of channels 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4 Rail-to-rail In to V- GBW (typ) (MHz) 1.7 Slew rate (typ) (V/µs) 0.5 Vos (offset voltage at 25°C) (max) (mV) 1.1 Iq per channel (typ) (mA) 0.2 Vn at 1 kHz (typ) (nV√Hz) 17 Rating Automotive Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 2 Input bias current (max) (pA) 70000 CMRR (typ) (dB) 90 Iout (typ) (A) 0.003 Architecture Bipolar Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -1 Output swing headroom (to negative supply) (typ) (V) 0.7 Output swing headroom (to positive supply) (typ) (V) -0.7
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • Qualified for Automotive Applications
  • ESD Protection Exceeds 1000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • Supply Current . . . 300 µA Max
  • High Unity-Gain Bandwidth . . . 2 MHz Typ
  • High Slew Rate . . . 0.45 V/µs Min
  • Supply-Current Change Over Full Temp Range . . . 10 µA Typ at VCC± = ± 15 V
  • Specified for Both 5-V Single-Supply and ±15-V Operation
  • Phase-Reversal Protection
  • High Open-Loop Gain . . . 6.5 V/µV (136 dB) Typ
  • Low Offset Voltage . . . 100 µV Max
  • Offset Voltage Drift With Time 0.005 µV/mo Typ
  • Low Input Bias Current . . . 50 nA Max
  • Low Noise Voltage . . . 19 nV/Hz Typ
  • Qualified for Automotive Applications
  • ESD Protection Exceeds 1000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • Supply Current . . . 300 µA Max
  • High Unity-Gain Bandwidth . . . 2 MHz Typ
  • High Slew Rate . . . 0.45 V/µs Min
  • Supply-Current Change Over Full Temp Range . . . 10 µA Typ at VCC± = ± 15 V
  • Specified for Both 5-V Single-Supply and ±15-V Operation
  • Phase-Reversal Protection
  • High Open-Loop Gain . . . 6.5 V/µV (136 dB) Typ
  • Low Offset Voltage . . . 100 µV Max
  • Offset Voltage Drift With Time 0.005 µV/mo Typ
  • Low Input Bias Current . . . 50 nA Max
  • Low Noise Voltage . . . 19 nV/Hz Typ

The TLE202x and TLE202xA devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth.

The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.

The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. This means that a precision device remains a precision device even with changes in temperature and over years of use.

This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices the ideal choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs goes below the negative supply rail.

A variety of available options includes small-outline versions for high-density systems applications.

The Q-suffix devices are characterized for operation over the full automotive temperature range of –40°C to 125°C.

The TLE202x and TLE202xA devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth.

The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.

The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. This means that a precision device remains a precision device even with changes in temperature and over years of use.

This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices the ideal choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs goes below the negative supply rail.

A variety of available options includes small-outline versions for high-density systems applications.

The Q-suffix devices are characterized for operation over the full automotive temperature range of –40°C to 125°C.
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다운로드

관심 가지실만한 유사 제품

open-in-new 대안 비교
비교 대상 장치와 동일한 기능을 지원하는 핀 대 핀
TLE2024 활성 쿼드 정밀 저전력 단일 공급 연산 증폭기 Temperature range of -40 to 85 C.

기술 자료

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* Data sheet TLE202x-Q1 Excalibur High-Speed Low-Power Precision Operational Amplifiers datasheet (Rev. B) 2008/04/30

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

지원 및 교육

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포럼 주제 모두 보기(영문)

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