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UCC27284-Q1

ACTIVE

Automotive 3-A, 120-V half bridge gate driver with 5-V UVLO

Product details

Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 5.5 Input supply voltage (max) (V) 16 Peak output current (A) 3.5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 5 Rating Automotive Propagation delay time (µs) 0.016 Rise time (ns) 12 Fall time (ns) 10 Iq (mA) 0.002 Input threshold TTL Channel input logic TTL Switch node voltage (V) -14 Features Enable TI functional safety category Functional Safety-Capable Driver configuration Dual inputs
Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 5.5 Input supply voltage (max) (V) 16 Peak output current (A) 3.5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 5 Rating Automotive Propagation delay time (µs) 0.016 Rise time (ns) 12 Fall time (ns) 10 Iq (mA) 0.002 Input threshold TTL Channel input logic TTL Switch node voltage (V) -14 Features Enable TI functional safety category Functional Safety-Capable Driver configuration Dual inputs
SOIC (D) 8 29.4 mm² 4.9 x 6
  • AEC-Q100 qualified with following results
    • Temperature grade 1 (Tj = –40°C to 150°C)
    • Device HBM ESD classification level 1B
    • Device CDM ESD classification level C3
  • Drives two N-channel MOSFETs in high-side low-side configuration
  • 5-V typical undervoltage lockout
  • 16-ns typical propagation delay
  • 12-ns rise, 10-ns fall time with 1.8-nF load
  • 1-ns typical delay matching
  • 5-V negative voltage handling on inputs
  • 14-V negative voltage handling on HS
  • ±3-A peak output current
  • Absolute maximum boot voltage 120 V
  • Integrated bootstrap diode
  • AEC-Q100 qualified with following results
    • Temperature grade 1 (Tj = –40°C to 150°C)
    • Device HBM ESD classification level 1B
    • Device CDM ESD classification level C3
  • Drives two N-channel MOSFETs in high-side low-side configuration
  • 5-V typical undervoltage lockout
  • 16-ns typical propagation delay
  • 12-ns rise, 10-ns fall time with 1.8-nF load
  • 1-ns typical delay matching
  • 5-V negative voltage handling on inputs
  • 14-V negative voltage handling on HS
  • ±3-A peak output current
  • Absolute maximum boot voltage 120 V
  • Integrated bootstrap diode

The UCC27284 -Q1 is a robust N-channel MOSFET driver with a maximum switch node (HS) voltage rating of 100 V. It allows for two N-channel MOSFETs to be controlled in half-bridge or synchronous buck configuration-based topologies. Its 3-A peak source and sink current along with low pull-up and pull-down resistance allows the UCC27284 -Q1 to drive large power MOSFETs with minimum switching losses during the transition of the MOSFET Miller plateau. Since the inputs are independent of the supply voltage, UCC27284 -Q1 can be used in conjunction with both analog and digital controllers. Two inputs, and therefore outputs, can be overlapped, if needed, in applications such as secondary side full-bridge synchronous rectification.

The input pins as well as the HS pin are able to tolerate significant negative voltage, which improves system robustness. 5-V UVLO allows systems to operate at lower bias voltages, which is necessary in many high frequency applications and improves system efficiency in certain operating modes. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency.

Undervoltage lockout (UVLO) is provided for both the high-side and low-side driver stages forcing the outputs low if the VDD voltage is below the specified threshold. An integrated bootstrap diode eliminates the need for an external discrete diode in many applications, which saves board space and reduces system cost. UCC27284-Q1 is offered in SOIC package for harsh system environments.

The UCC27284 -Q1 is a robust N-channel MOSFET driver with a maximum switch node (HS) voltage rating of 100 V. It allows for two N-channel MOSFETs to be controlled in half-bridge or synchronous buck configuration-based topologies. Its 3-A peak source and sink current along with low pull-up and pull-down resistance allows the UCC27284 -Q1 to drive large power MOSFETs with minimum switching losses during the transition of the MOSFET Miller plateau. Since the inputs are independent of the supply voltage, UCC27284 -Q1 can be used in conjunction with both analog and digital controllers. Two inputs, and therefore outputs, can be overlapped, if needed, in applications such as secondary side full-bridge synchronous rectification.

The input pins as well as the HS pin are able to tolerate significant negative voltage, which improves system robustness. 5-V UVLO allows systems to operate at lower bias voltages, which is necessary in many high frequency applications and improves system efficiency in certain operating modes. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency.

Undervoltage lockout (UVLO) is provided for both the high-side and low-side driver stages forcing the outputs low if the VDD voltage is below the specified threshold. An integrated bootstrap diode eliminates the need for an external discrete diode in many applications, which saves board space and reduces system cost. UCC27284-Q1 is offered in SOIC package for harsh system environments.

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