產品詳細資料

Technology family ACT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 4 Inputs per channel 2 IOL (max) (mA) 24 Input type TTL-Compatible CMOS IOH (max) (mA) -24 Output type Push-Pull Features Over-voltage tolerant inputs, Very high speed (tpd 5-10ns) Data rate (max) (Mbps) 90 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125
Technology family ACT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 4 Inputs per channel 2 IOL (max) (mA) 24 Input type TTL-Compatible CMOS IOH (max) (mA) -24 Output type Push-Pull Features Over-voltage tolerant inputs, Very high speed (tpd 5-10ns) Data rate (max) (Mbps) 90 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125
SOIC (D) 14 51.9 mm² 8.65 x 6
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of -55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • Inputs Are TTL-Voltage Compatible
  • Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption
  • Balanced Propagation Delays
  • ±24-mA Output Drive Current
    • Fanout to 15 F Devices
  • SCR-Latchup-Resistant CMOS Process and Circuit Design
  • Exceeds 2-kV ESD Protection Per MIL-STD-883, Method 3015

(1)Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified
performance and environmental limits.

  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of -55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • Inputs Are TTL-Voltage Compatible
  • Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption
  • Balanced Propagation Delays
  • ±24-mA Output Drive Current
    • Fanout to 15 F Devices
  • SCR-Latchup-Resistant CMOS Process and Circuit Design
  • Exceeds 2-kV ESD Protection Per MIL-STD-883, Method 3015

(1)Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified
performance and environmental limits.

The CD74ACT86-EP is a quadruple 2-input exclusive-OR gate. This device performs the Boolean function Y = A B or Y = AB + AB in positive logic.

A common application is as a true/complement element. If one of the inputs is low, the other input is reproduced in true form at the output. If one of the inputs is high, the signal on the other input is reproduced inverted at the output.

The CD74ACT86-EP is a quadruple 2-input exclusive-OR gate. This device performs the Boolean function Y = A B or Y = AB + AB in positive logic.

A common application is as a true/complement element. If one of the inputs is low, the other input is reproduced in true form at the output. If one of the inputs is high, the signal on the other input is reproduced inverted at the output.

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類型 標題 日期
* Data sheet CD74ACT86-EP datasheet 2006年 3月 1日
* VID CD74ACT86-EP VID V6206620 2016年 6月 21日
Application note Implications of Slow or Floating CMOS Inputs (Rev. E) 2021年 7月 26日
Selection guide Logic Guide (Rev. AB) 2017年 6月 12日
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
User guide LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
Application note Selecting the Right Level Translation Solution (Rev. A) 2004年 6月 22日
Application note TI IBIS File Creation, Validation, and Distribution Processes 2002年 8月 29日
Application note CMOS Power Consumption and CPD Calculation (Rev. B) 1997年 6月 1日
Application note Designing With Logic (Rev. C) 1997年 6月 1日
Application note Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc 1996年 4月 1日

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