產品詳細資料

Technology family AS Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 6 Inputs per channel 2 IOL (max) (mA) 20 IOH (max) (mA) -2 Input type Bipolar Output type Push-Pull Features Very high speed (tpd 5-10ns) Data rate (max) (Mbps) 125 Rating Catalog Operating temperature range (°C) 0 to 70
Technology family AS Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 6 Inputs per channel 2 IOL (max) (mA) 20 IOH (max) (mA) -2 Input type Bipolar Output type Push-Pull Features Very high speed (tpd 5-10ns) Data rate (max) (Mbps) 125 Rating Catalog Operating temperature range (°C) 0 to 70
PDIP (N) 20 228.702 mm² 24.33 x 9.4 SOIC (DW) 20 131.84 mm² 12.8 x 10.3
  • High Capacitive-Drive Capability
  • Typical Delay Time of 3.2 ns (CL = 50 pF) and Typical Power Dissipation of Less Than 13 mW Per Gate
  • Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK), and Standard Plastic (N) and Ceramic (J) 300-mil DIPs

 

  • High Capacitive-Drive Capability
  • Typical Delay Time of 3.2 ns (CL = 50 pF) and Typical Power Dissipation of Less Than 13 mW Per Gate
  • Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK), and Standard Plastic (N) and Ceramic (J) 300-mil DIPs

 

These devices contain six independent 2-input AND drivers. They perform the Boolean functions Y = A \x95 B or in positive logic.

 

The SN54AS808B is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74AS808B is characterized for operation from 0°C to 70°C.

 

 

These devices contain six independent 2-input AND drivers. They perform the Boolean functions Y = A \x95 B or in positive logic.

 

The SN54AS808B is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74AS808B is characterized for operation from 0°C to 70°C.

 

 

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類型 標題 日期
* Data sheet Hex 2-Input And Drivers datasheet (Rev. C) 1995年 1月 1日

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  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊:
  • 晶圓廠位置
  • 組裝地點

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