SN74LVC1G32-EP
- Controlled Baseline
- One Assembly/Test Site, One Fabrication Site
- Extended Temperature Performance of -55°C to 125°C
- Enhanced Diminishing Manufacturing Sources (DMS) Support
- Enhanced Product-Change Notification
- Qualification Pedigree(1)
- Supports 5-V VCC Operation
- Inputs Accept Voltages to 5.5 V
- Max tpd of 3.6 ns at 3.3 V
- Low Power Consumption, 10 µA Max ICC
- ±24-mA Output Drive at 3.3 V
- Ioff Supports Partial Power Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Protection Exceeds JESD 22
- 2000-V Human-Body Model (A114-A)
- 200-V Machine Model (A115-A)
- 1000-V Charged-Device Model (C101)
(1) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
This single 2-input positive-OR gate is designed for 1.65-V to 5.5-V VCC operation.
The SN74LVC1G32 performs the Boolean function Y = A + B or Y = A\ B\ in positive logic.
This device is fully specified for partial power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.
技術文件
設計與開發
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封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
SOT-23 (DBV) | 5 | Ultra Librarian |
SOT-SC70 (DCK) | 5 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點