首頁 邏輯和電壓轉換 邏輯閘 NAND 閘
首頁
邏輯和電壓轉換
邏輯閘
NAND 閘

SN74LVC2G00W-EP

現行

強化型產品 2 通道、2 輸入、1.65-V 至 5.5-V NAND 閘

立即訂購
產品規格表

SN74LVC2G00W-EP

現行
產品規格表 立即訂購

產品詳細資料

Technology family LVC Supply voltage (min) (V) 1.65 Supply voltage (max) (V) 5.5 Number of channels 2 Inputs per channel 2 IOL (max) (mA) 32 IOH (max) (mA) -32 Input type Standard CMOS Output type Push-Pull Features Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Data rate (max) (Mbps) 100 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 115
Technology family LVC Supply voltage (min) (V) 1.65 Supply voltage (max) (V) 5.5 Number of channels 2 Inputs per channel 2 IOL (max) (mA) 32 IOH (max) (mA) -32 Input type Standard CMOS Output type Push-Pull Features Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Data rate (max) (Mbps) 100 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 115
SSOP (DCT) 8 11.8 mm² 2.95 x 4
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of -55°C to 115°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • Supports 5-V VCC Operation
  • Inputs Accept Voltages to 5.5 V
  • Max tpd of 5.3 ns at 3.3 V
  • Low Power Consumption, 10-µA Max ICC
  • ±24-mA Output Drive at 3.3 V
  • Typical VOLP (Output Ground Bounce) <0.8 V at VCC = 3.3 V, TA = 25°C
  • Typical VOHV (Output VOH Undershoot) >2 V at VCC = 3.3 V, TA = 25°C
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 1000-V Charged-Device Model (C101)

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified
performance and environmental limits.
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of -55°C to 115°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • Supports 5-V VCC Operation
  • Inputs Accept Voltages to 5.5 V
  • Max tpd of 5.3 ns at 3.3 V
  • Low Power Consumption, 10-µA Max ICC
  • ±24-mA Output Drive at 3.3 V
  • Typical VOLP (Output Ground Bounce) <0.8 V at VCC = 3.3 V, TA = 25°C
  • Typical VOHV (Output VOH Undershoot) >2 V at VCC = 3.3 V, TA = 25°C
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 1000-V Charged-Device Model (C101)

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified
performance and environmental limits.

This dual 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCC operation.

The SN74LVC2G00W-EP performs the Boolean function Y = A • B or Y = A + B in positive logic.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

This dual 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCC operation.

The SN74LVC2G00W-EP performs the Boolean function Y = A • B or Y = A + B in positive logic.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.
filter 尋找其它 NAND 閘
下載 觀看有字幕稿的影片 影片

技術文件

star =TI 所選的此產品重要文件
找不到結果。請清除您的搜尋條件，然後再試一次。
檢視所有 28
類型 標題 日期
* Data sheet SN74LVC2G00W-EP datasheet 2005年 8月 5日
* VID SN74LVC2G00W-EP VID V6205623 2016年 6月 21日
Application note Implications of Slow or Floating CMOS Inputs (Rev. E) 2021年 7月 26日
Selection guide Little Logic Guide 2018 (Rev. G) 2018年 7月 6日
Selection guide Logic Guide (Rev. AB) 2017年 6月 12日
Application note How to Select Little Logic (Rev. A) 2016年 7月 26日
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
User guide LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
Product overview Design Summary for WCSP Little Logic (Rev. B) 2004年 11月 4日
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
Application note Selecting the Right Level Translation Solution (Rev. A) 2004年 6月 22日
User guide Signal Switch Data Book (Rev. A) 2003年 11月 14日
Application note Use of the CMOS Unbuffered Inverter in Oscillator Circuits 2003年 11月 6日
User guide LVC and LV Low-Voltage CMOS Logic Data Book (Rev. B) 2002年 12月 18日
Application note Texas Instruments Little Logic Application Report 2002年 11月 1日
Application note TI IBIS File Creation, Validation, and Distribution Processes 2002年 8月 29日
More literature Standard Linear & Logic for PCs, Servers & Motherboards 2002年 6月 13日
Application note 16-Bit Widebus Logic Families in 56-Ball, 0.65-mm Pitch Very Thin Fine-Pitch BGA (Rev. B) 2002年 5月 22日
Application note Power-Up 3-State (PU3S) Circuits in TI Standard Logic Devices 2002年 5月 10日
More literature STANDARD LINEAR AND LOGIC FOR DVD/VCD PLAYERS 2002年 3月 27日
Application note Migration From 3.3-V To 2.5-V Power Supplies For Logic Devices 1997年 12月 1日
Application note Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 1997年 8月 1日
Application note CMOS Power Consumption and CPD Calculation (Rev. B) 1997年 6月 1日
Application note LVC Characterization Information 1996年 12月 1日
Application note Input and Output Characteristics of Digital Integrated Circuits 1996年 10月 1日
Application note Live Insertion 1996年 10月 1日
Design guide Low-Voltage Logic (LVC) Designer's Guide 1996年 9月 1日
Application note Understanding Advanced Bus-Interface Products Design Guide 1996年 5月 1日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

封裝 針腳 CAD 符號、佔位空間與 3D 模型
SSOP (DCT) 8 Ultra Librarian
適用 TI 的評估品項標準條款與條件。

訂購與品質

內含資訊：
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊：
  • 晶圓廠位置
  • 組裝地點

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

以英文檢視所有論壇主題

內容係由 TI 和社群貢獻者依「現狀」提供，且不構成 TI 規範。檢視使用條款。

若有關於品質、封裝或訂購 TI 產品的問題，請參閱 TI 支援。​​​​​​​​​​​​​​

影片