SLLA305A May 2010 – September 2023 ESD441 , TPD12S015 , TPD12S015A , TPD12S016 , TPD12S520 , TPD12S521 , TPD13S523 , TPD1E05U06 , TPD1E10B06 , TPD1E10B09 , TPD1E6B06 , TPD1S414 , TPD1S514 , TPD2E001 , TPD2E001-Q1 , TPD2E009 , TPD2E1B06 , TPD2E2U06 , TPD2E2U06-Q1 , TPD2EUSB30 , TPD2EUSB30A , TPD2S017 , TPD3F303 , TPD3S014 , TPD3S044 , TPD4E001 , TPD4E001-Q1 , TPD4E004 , TPD4E02B04 , TPD4E05U06 , TPD4E05U06-Q1 , TPD4E101 , TPD4E1B06 , TPD4E1U06 , TPD4E6B06 , TPD4EUSB30 , TPD4S010 , TPD4S012 , TPD4S014 , TPD4S1394 , TPD4S214 , TPD5E003 , TPD5S115 , TPD5S116 , TPD6E001 , TPD6E004 , TPD6E05U06 , TPD6F002 , TPD6F002-Q1 , TPD6F003 , TPD6F202 , TPD7S019 , TPD8E003 , TPD8F003 , TPD8S009
The electrical characteristics section of the data sheet is arguably the most important. This section discusses in detail the specific ESD protection device parameters which must be understood thoroughly for choosing the most applicable protection device. Table 4-9 is an electrical characteristics table from an ESD protection device data sheet with parameters typically seen across all ESD device data sheets.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VRWM | Reverse stand-off voltage | IIO <100 nA, across operating temperature range | -5.5 | 5.5 | V | |
ILEAK | Reverse leakage current | VIO = 5.5 V, IO to GND or GND to IO | 5 | 50 | nA | |
VBRR | Break-down voltage | IIO = 1 mA, IO to GND | 7 | 8 | 9 | V |
VBRF | Break-down voltage | IIO = 1 mA, GND to IO | 7 | 8 | 9 | V |
VHOLD | Holding Voltage | TLP, IO to GND or GND to IO | 7.2 | V | ||
VCLAMP | Clamping Voltage with TLP | IPP = 1 A, TLP, IO to GND | 7.6 | V | ||
IPP = 5 A, TLP, IO to GND | 8.2 | V | ||||
IPP = 16 A, TLP, IO to GND | 10.4 | V | ||||
IPP = 1 A, TLP, GND to IO | 7.6 | V | ||||
IPP = 5 A, TLP, GND to IO | 8.2 | V | ||||
IPP = 16 A, TLP, GND to IO | 10.4 | V | ||||
Clamping voltage with surge strike | IPP = 6 A, tp = 8/20 µs, IO to GND | 9.5 | V | |||
IPP = 6 A, tp = 8/20 µs, GND to IO | 9.5 | V | ||||
RDYN | Dynamic resistance | IO to GND | 0.19 | Ω | ||
GND to IO | ||||||
CL | Line capacitance | VIO = 0 V; f = 1 MHz, Vpp = 30 mV, IO to GND or IO to GND | 0.5 | pF |