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DRV3245E-Q1

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0–12-V-Batterie, 3-Phasen-Gate-Treibereinheit mit genauer Stromerfassung und verbessertem Schutz für

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Datenblatt

DRV3245E-Q1

AKTIV
Datenblatt Jetzt bestellen

Produktdetails

Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 45 Features Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 150 TI functional safety category Functional Safety-Compliant
Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 45 Features Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 150 TI functional safety category Functional Safety-Compliant
HTQFP (PHP) 48 81 mm² 9 x 9
  • AEC-Q100 qualified for automotive applications:
    • Device temperature grade 0:
      –40°C to +150°C, TA
  • SafeTI™semiconductor component
    • Developed according to the applicable requirements of ISO 26262
  • 4.5-V to 45-V operating voltage
  • Programmable peak gate drive currents up to 1A
  • Charge-pump gate driver for 100% Duty Cycle
  • Current-shunt amplifiers and phase comparators
    • A Device: 3 current-shunt amplifiers and 3-phase comparators with status through SPI
    • B Device: 2 current-shunt amplifiers and 3-phase comparators with real-time monitor through digital pins
  • 3-PWM or 6-PWM input control up to 20 kHz
  • Single PWM-mode commutation capability
  • Supports both 3.3-V and 5-V digital interface
  • Serial peripheral interface (SPI)
  • Thermally-enhanced 48-Pin HTQFP
  • Protection features:
    • Internal regulators, battery voltage monitor
    • SPI CRC
    • Clock monitor
    • Analog built-in self test
    • Programmable dead-time control
    • MOSFET shoot-through prevention
    • MOSFET VDS overcurrent monitors
    • Gate-source voltage real time monitor
    • Overtemperature warning
  • AEC-Q100 qualified for automotive applications:
    • Device temperature grade 0:
      –40°C to +150°C, TA
  • SafeTI™semiconductor component
    • Developed according to the applicable requirements of ISO 26262
  • 4.5-V to 45-V operating voltage
  • Programmable peak gate drive currents up to 1A
  • Charge-pump gate driver for 100% Duty Cycle
  • Current-shunt amplifiers and phase comparators
    • A Device: 3 current-shunt amplifiers and 3-phase comparators with status through SPI
    • B Device: 2 current-shunt amplifiers and 3-phase comparators with real-time monitor through digital pins
  • 3-PWM or 6-PWM input control up to 20 kHz
  • Single PWM-mode commutation capability
  • Supports both 3.3-V and 5-V digital interface
  • Serial peripheral interface (SPI)
  • Thermally-enhanced 48-Pin HTQFP
  • Protection features:
    • Internal regulators, battery voltage monitor
    • SPI CRC
    • Clock monitor
    • Analog built-in self test
    • Programmable dead-time control
    • MOSFET shoot-through prevention
    • MOSFET VDS overcurrent monitors
    • Gate-source voltage real time monitor
    • Overtemperature warning

The DRV3245E-Q1 device is a FET gate driver IC for three-phase motor-drive applications. The device is intended for high-temperature automotive applications and is designed according to the applicable requirements of ISO 26262 for functional safety applications. The device provides three half-bridge drivers each capable of driving a high-side and low-side N-channel MOSFET while also providing sophisticated protection and monitoring of the FETs. A charge-pump driver enables 100% duty cycle and supports low battery voltages during cold-crank operation. The integration of current-sense amplifiers, integrated phase comparators, and SPI-based configuration enable reduction of the bill of materials (BOM) and space on the printed circuit board (PCB) because of the elimination of most external and passive components.

The DRV3245E-Q1 device also integrates diagnostics and protection for each internal block and provides support for common system diagnostic checks each of which can be instantiated and reported through SPI. This flexibility of the integrated features allows the device to integrate seamlessly into a variety of safety architectures.

The DRV3245E-Q1 device is a FET gate driver IC for three-phase motor-drive applications. The device is intended for high-temperature automotive applications and is designed according to the applicable requirements of ISO 26262 for functional safety applications. The device provides three half-bridge drivers each capable of driving a high-side and low-side N-channel MOSFET while also providing sophisticated protection and monitoring of the FETs. A charge-pump driver enables 100% duty cycle and supports low battery voltages during cold-crank operation. The integration of current-sense amplifiers, integrated phase comparators, and SPI-based configuration enable reduction of the bill of materials (BOM) and space on the printed circuit board (PCB) because of the elimination of most external and passive components.

The DRV3245E-Q1 device also integrates diagnostics and protection for each internal block and provides support for common system diagnostic checks each of which can be instantiated and reported through SPI. This flexibility of the integrated features allows the device to integrate seamlessly into a variety of safety architectures.
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DRV3245Q-Q1 AKTIV 1–12-V-Batterie, 3-Phasen-Gate-Treibereinheit mit genauer Stromerfassung und verbessertem Schutz für Alternate GPN is Grade 1 device (which DRV3245E is Grade 0). If end application does not need Auto Grade 0 temperature range, DRV3245Q-Q1 device can be used.

Technische Dokumentation

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Typ Titel Datum
* Data sheet DRV3245E-Q1 3-Phase Grade 0 Automotive Gate Driver Unit (GDU) With High Performance Sensing, Protection and Diagnostics datasheet PDF | HTML 29 Mär 2019
White paper Understanding Functional Safety FIT Base Failure Rate Estimates per IEC 62380 and SN 29500 (Rev. A) PDF | HTML 30 Apr 2024
Application note Best Practices for Board Layout of Motor Drivers (Rev. B) PDF | HTML 14 Okt 2021

Design und Entwicklung

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Evaluierungsplatine

BOOSTXL-DRV3245AQ1 — DRV3245Q-Q1 3-Phasen-Motor-Gate-Treiber für die Automobilindustrie – Evaluierungsmodul

The Texas Instruments BOOSTXL-DRV3245AQ1 evaluation module (EVM) helps designers evaluate the operation and performance of the DRV3245AQPHPRQ1 motor gate driver. The EVM utilizes a compact and modular form for ease of use and is designed to dock with compatible TI LaunchPads for a complete (...)
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