DRV3245Q-Q1

AKTIV

1–12 V-Batterie, 3-Phasen-Gate-Treibereinheit mit genauer Stromerfassung und verbessertem Schutz für

Produktdetails

Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 45 Features Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 150 TI functional safety category Functional Safety-Compliant
Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 45 Features Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 150 TI functional safety category Functional Safety-Compliant
HTQFP (PHP) 48 81 mm² 9 x 9
  • AEC-Q100 qualified for automotive applications:
    • Device temperature grade 1: –40°C to +125°C, TA
  • Functional Safety-Compliant
    • Developed for functional safety applications
    • Documentation available to aid ISO 26262 system design up to ASIL D
    • Systematic capability up to ASIL D
  • 4.5-V to 45-V operating voltage
  • Programmable peak gate drive currents up to 1A
  • Charge-pump gate driver for 100% Duty Cycle
  • Current-shunt amplifiers and phase comparators
    • A / C Device: 3 current-shunt amplifiers(1) and 3-phase comparators with status through SPI (1)
    • B Device: 2 current-shunt amplifiers and 3-phase comparators with real-time monitor through digital pins
    • S Device: 3 current-shunt amplifiers
  • 3-PWM or 6-PWM input control up to 20 kHz
  • Single PWM-mode commutation capability
  • Supports both 3.3-V and 5-V digital interface
  • Serial peripheral interface (SPI)
  • Thermally-enhanced 48-Pin HTQFP
  • Protection features:
    • Internal regulators, battery voltage monitor
    • SPI CRC
    • Clock monitor
    • Analog built-in self test
    • Programmable dead-time control
    • MOSFET shoot-through prevention
    • MOSFET VDS overcurrent monitors
    • Gate-source voltage real time monitor
    • Overtemperature warning and Shutdown

(1)C device : Low-drift offset high-precision amplifiers

  • AEC-Q100 qualified for automotive applications:
    • Device temperature grade 1: –40°C to +125°C, TA
  • Functional Safety-Compliant
    • Developed for functional safety applications
    • Documentation available to aid ISO 26262 system design up to ASIL D
    • Systematic capability up to ASIL D
  • 4.5-V to 45-V operating voltage
  • Programmable peak gate drive currents up to 1A
  • Charge-pump gate driver for 100% Duty Cycle
  • Current-shunt amplifiers and phase comparators
    • A / C Device: 3 current-shunt amplifiers(1) and 3-phase comparators with status through SPI (1)
    • B Device: 2 current-shunt amplifiers and 3-phase comparators with real-time monitor through digital pins
    • S Device: 3 current-shunt amplifiers
  • 3-PWM or 6-PWM input control up to 20 kHz
  • Single PWM-mode commutation capability
  • Supports both 3.3-V and 5-V digital interface
  • Serial peripheral interface (SPI)
  • Thermally-enhanced 48-Pin HTQFP
  • Protection features:
    • Internal regulators, battery voltage monitor
    • SPI CRC
    • Clock monitor
    • Analog built-in self test
    • Programmable dead-time control
    • MOSFET shoot-through prevention
    • MOSFET VDS overcurrent monitors
    • Gate-source voltage real time monitor
    • Overtemperature warning and Shutdown

(1)C device : Low-drift offset high-precision amplifiers

The DRV3245Q-Q1 device is a FET gate driver IC for three-phase motor-drive applications designed according to the applicable requirements of ISO 26262 for functional safety applications. The device provides three half-bridge drivers each capable of driving a high-side and low-side N-channel MOSFET while also providing sophisticated protection and monitoring of the FETs. A charge-pump driver enables 100% duty cycle and supports low battery voltages during cold-crank operation. The integration of current-sense amplifiers, integrated phase comparators, and SPI-based configuration of the driver and its peripherals enable reduction of the bill of materials (BOM) and space on the printed circuit board (PCB) because of the elimination of most external and passive components.

The DRV3245Q-Q1 device also integrates diagnostics and protection for each internal block and provides support for common system diagnostic checks each of which can be instantiated and reported through SPI. This flexibility of the integrated features allows the device to integrate seamlessly into a variety of safety architectures.

The DRV3245Q-Q1 device is a FET gate driver IC for three-phase motor-drive applications designed according to the applicable requirements of ISO 26262 for functional safety applications. The device provides three half-bridge drivers each capable of driving a high-side and low-side N-channel MOSFET while also providing sophisticated protection and monitoring of the FETs. A charge-pump driver enables 100% duty cycle and supports low battery voltages during cold-crank operation. The integration of current-sense amplifiers, integrated phase comparators, and SPI-based configuration of the driver and its peripherals enable reduction of the bill of materials (BOM) and space on the printed circuit board (PCB) because of the elimination of most external and passive components.

The DRV3245Q-Q1 device also integrates diagnostics and protection for each internal block and provides support for common system diagnostic checks each of which can be instantiated and reported through SPI. This flexibility of the integrated features allows the device to integrate seamlessly into a variety of safety architectures.

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Typ Titel Datum
* Data sheet DRV3245Q-Q1 3-Phase Automotive Gate Driver Unit (GDU) With High Performance Sensing, Protection and Diagnostics datasheet (Rev. D) PDF | HTML 19 Jun 2024
Functional safety information Actuator Design Trends for Funct. Safety Sys. in Elect. and Autonomous Vehicles (Rev. A) PDF | HTML 21 Jul 2023
Application note Best Practices for Board Layout of Motor Drivers (Rev. B) PDF | HTML 14 Okt 2021
White paper 電気自動車と自動運転車の機能安全システムのアクチュエータ設計動向 30 Mär 2020
Application note Protecting Automotive Motor Drive Systems from Reverse Polarity Conditions (Rev. A) 19 Feb 2019
Application brief Designing High-Side and 3-Phase Isolator MOSFET Circuits in Motor Apps 09 Mai 2018
Functional safety information Analog components advance functional safety development for automotive applicati 20 Jan 2017

Design und Entwicklung

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Evaluierungsplatine

BOOSTXL-DRV3245AQ1 — DRV3245Q-Q1 3-Phasen-Motor-Gate-Treiber für die Automobilindustrie – Evaluierungsmodul

The Texas Instruments BOOSTXL-DRV3245AQ1 evaluation module (EVM) helps designers evaluate the operation and performance of the DRV3245AQPHPRQ1 motor gate driver. The EVM utilizes a compact and modular form for ease of use and is designed to dock with compatible TI LaunchPads for a complete (...)
Simulationsmodell

DRV3245Q-Q1 IBIS MODEL

SLVMD47.ZIP (16 KB) - IBIS Model
Designtool

BOOSTXL-DRV3245BQ1-DESIGN DRV3245Q-Q1 Automotive 3-Phase Motor Gate Driver Evaluation Module

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DRV3245Q-Q1 1–12 V-Batterie, 3-Phasen-Gate-Treibereinheit mit genauer Stromerfassung und verbessertem Schutz für
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HTQFP (PHP) 48 Ultra Librarian

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