3-Phasen-Gate-Treiber für die Automobilindustrie

DRV8301-Q1 wird nicht für neue Designs empfohlen
Dieses Produkt ist weiterhin für Bestandskunden erhältlich. Neue Designs sollten ein alternatives Produkt erwägen.
Ähnliche Funktionalität wie verglichener Baustein
DRV8343-Q1 AKTIV 12-bis-24-V-Batterie-3-Phasen-Smart-Gate-Treiber mit Strom-Shunt-Verstärkern für die Automobilind DRV8343-Q1 supports up to 60 V input voltage and has 3 current-sense amplifiers

Produktdetails

Rating Automotive Architecture Gate driver Operating temperature range (°C) -40 to 125
Rating Automotive Architecture Gate driver Operating temperature range (°C) -40 to 125
HTSSOP (DCA) 56 113.4 mm² 14 x 8.1
  • Qualified for Automotive Applications
  • AEC-Q100 Tested With the Following Results:
    • Device Temperature Grade 1: –40°C to 125°C
      Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4A
  • Operating Supply Voltage 6 to 60 V
  • 2.3-A Sink and 1.7-A Source Gate Drive Current
    Capability
  • Integrated Dual Shunt Current Amplifiers With
    Adjustable Gain and Offset
  • Integrated Buck Converter to Support up to 1.5-A
    External Load
  • Independent Control of 3 or 6 PWM Inputs
  • Bootstrap Gate Driver With 100% Duty Cycle
    Support
  • Programmable Dead Time to Protect External
    FETs from Shoot-Through
  • Slew Rate Control for EMI Reduction
  • Programmable Overcurrent Protection of External
    MOSFETs
  • Support Both 3.3-V and 5-V Digital Interface
  • SPI Interface
  • Thermally Enhanced 56-Pin HTSSOP Pad-Down
    DCA Package
  • Qualified for Automotive Applications
  • AEC-Q100 Tested With the Following Results:
    • Device Temperature Grade 1: –40°C to 125°C
      Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4A
  • Operating Supply Voltage 6 to 60 V
  • 2.3-A Sink and 1.7-A Source Gate Drive Current
    Capability
  • Integrated Dual Shunt Current Amplifiers With
    Adjustable Gain and Offset
  • Integrated Buck Converter to Support up to 1.5-A
    External Load
  • Independent Control of 3 or 6 PWM Inputs
  • Bootstrap Gate Driver With 100% Duty Cycle
    Support
  • Programmable Dead Time to Protect External
    FETs from Shoot-Through
  • Slew Rate Control for EMI Reduction
  • Programmable Overcurrent Protection of External
    MOSFETs
  • Support Both 3.3-V and 5-V Digital Interface
  • SPI Interface
  • Thermally Enhanced 56-Pin HTSSOP Pad-Down
    DCA Package

The DRV8301-Q1 device is an automotive gate driver IC for three phase motor drive applications. The device provides three half bridge drivers, each capable of driving two N-type MOSFETs, one for the high-side and one for the low side. The device supports up to 2.3-A sink and 1.7-A source peak current capability and only needs a single power supply with a wide range from 6 to 60 V. The DRV8301-Q1 device uses bootstrap gate drivers with trickle charge circuitry to support 100% duty cycle. The gate driver uses automatic hand shaking when high-side FET or low-side FET is switching to prevent current shoot through. VDS of FETs is sensed to protect external power stage during overcurrent conditions.

The DRV8301-Q1 device includes two current shunt amplifiers for accurate current measurement. The current amplifiers support bi-directional current sensing and provide an adjustable output offset of up to 3 V.

The DRV8301-Q1 device also has an integrated switching mode buck converter with adjustable output and switching frequency to support MCU or additional system power needs. The buck is capable to drive up to 1.5-A load.

The SPI interface provides detailed fault reporting and flexible parameter settings such as gain options for current shunt amplifier, slew rate control of gate driver, and other settings.

The DRV8301-Q1 device is an automotive gate driver IC for three phase motor drive applications. The device provides three half bridge drivers, each capable of driving two N-type MOSFETs, one for the high-side and one for the low side. The device supports up to 2.3-A sink and 1.7-A source peak current capability and only needs a single power supply with a wide range from 6 to 60 V. The DRV8301-Q1 device uses bootstrap gate drivers with trickle charge circuitry to support 100% duty cycle. The gate driver uses automatic hand shaking when high-side FET or low-side FET is switching to prevent current shoot through. VDS of FETs is sensed to protect external power stage during overcurrent conditions.

The DRV8301-Q1 device includes two current shunt amplifiers for accurate current measurement. The current amplifiers support bi-directional current sensing and provide an adjustable output offset of up to 3 V.

The DRV8301-Q1 device also has an integrated switching mode buck converter with adjustable output and switching frequency to support MCU or additional system power needs. The buck is capable to drive up to 1.5-A load.

The SPI interface provides detailed fault reporting and flexible parameter settings such as gain options for current shunt amplifier, slew rate control of gate driver, and other settings.

Herunterladen

Technische Dokumentation

star =Von TI ausgewählte Top-Empfehlungen für dieses Produkt
Keine Ergebnisse gefunden. Bitte geben Sie einen anderen Begriff ein und versuchen Sie es erneut.
Alle anzeigen 1
Typ Titel Datum
* Data sheet DRV8301-Q1 Automotive Three-Phase Gate Driver With Dual Current Shunt Amplifiers and Buck Regulator datasheet (Rev. A) PDF | HTML 30 Jun 2015

Bestellen & Qualität

Beinhaltete Information:
  • RoHS
  • REACH
  • Bausteinkennzeichnung
  • Blei-Finish/Ball-Material
  • MSL-Rating / Spitzenrückfluss
  • MTBF-/FIT-Schätzungen
  • Materialinhalt
  • Qualifikationszusammenfassung
  • Kontinuierliches Zuverlässigkeitsmonitoring
Beinhaltete Information:
  • Werksstandort
  • Montagestandort