Información de empaque
| Encapsulado | Pines SOIC (D) | 8 |
| Rango de temperatura de funcionamiento (℃) -40 to 125 |
| Cant. de paquetes | Empresa de transporte 3,000 | LARGE T&R |
Características para INA592
- G = 1/2 amplifier
- G = 2 amplifier
- Low offset voltage: 40 µV (maximum)
- Low offset voltage drift: ±2 µV/°C (maximum)
- Low noise: 18 nV/√Hz at 1 kHz
- Low gain error: ±0.03% (maximum)
- High common-mode rejection: 88 dB (minimum)
- Wide bandwidth: 2 MHz GBW
- Low quiescent current: 1.1 mA per amplifier
- High slew rate: 18 V/µs
- High capacitive load drive capability: 500 pF
- Wide supply range:
- Single supply: 4.5 V to 36 V
- Dual supply: ±2.25 V to ±18 V
- Specified temperature range: –40°C to +125°C
- Packages: 8-Pin MSOP and SOIC, 10-pin VSON
Descripción de INA592
The INA592 device is a low-power, wide bandwidth difference amplifier consisting of a precision operational amplifier (op amp) and a precision resistor network. Excellent tracking of resistors (TCR) maintains gain accuracy and common-mode rejection over temperature. Unique features such as low offset 40 µV (maximum), low offset drift (2 µV/°C maximum) high slew rate (18 V/µs), and high capacitive load drive of up to 500 pF make the INA592 a robust, high-performance difference amplifier for high-voltage industrial applications. The common-mode range of the internal op amp extends to the negative supply, enabling the device to operate in single-supply applications. The device operates on single (4.5 V to 36 V) or dual supplies (±2.25 V to ±18 V).
The difference amplifier is the foundation of many commonly used circuits. The INA592 provides this circuit function without using an expensive precision resistor network.