전원 관리 게이트 드라이버 하프 브리지 드라이버

UCC27311A

활성

8V UVLO 및 활성화를 지원하는 120V, 4A 하프 브리지 드라이버

제품 상세 정보

Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 4 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Enable, Negative voltage handling Driver configuration Dual, Noninverting, TTL compatible
Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 4 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Enable, Negative voltage handling Driver configuration Dual, Noninverting, TTL compatible
VSON (DRC) 10 9 mm² 3 x 3
  • Drives two N-channel MOSFETs in half-bridge configuration
  • –40°C to +150°C junction temperature range
  • 120V abs max voltage on HB pin
  • 3.7A sink, 4.5A source output currents
  • 8V to 17V VDD operating range (20V abs max) with UVLO
  • –(28–VDD)V abs max negative transient tolerance on HS pin (<100ns pulse)
  • –10V to +20V abs max input pins tolerance, independent of supply voltage range (TTL compatible)
  • Switching parameters:
    • 20ns typical propagation delay times
    • 7.2ns rise and 5.5ns fall time with 1000pF load
    • 4ns typical delay matching
  • Integrated bootstrap diode
  • Enable/disable functionality with low current consumption (3µA typical) when disabled
  • Drives two N-channel MOSFETs in half-bridge configuration
  • –40°C to +150°C junction temperature range
  • 120V abs max voltage on HB pin
  • 3.7A sink, 4.5A source output currents
  • 8V to 17V VDD operating range (20V abs max) with UVLO
  • –(28–VDD)V abs max negative transient tolerance on HS pin (<100ns pulse)
  • –10V to +20V abs max input pins tolerance, independent of supply voltage range (TTL compatible)
  • Switching parameters:
    • 20ns typical propagation delay times
    • 7.2ns rise and 5.5ns fall time with 1000pF load
    • 4ns typical delay matching
  • Integrated bootstrap diode
  • Enable/disable functionality with low current consumption (3µA typical) when disabled

The UCC27311A is a robust gate driver designed to drive two N-channel MOSFETs in a half-bridge or synchronous buck configuration with an absolute maximum bootstrap voltage of 120V. Its 3.7A peak source and 4.5A peak sink current capability allows the UCC27311A to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.

The inputs are independent of supply voltage and are able to withstand -10V and +20V absolute maximum ratings. The low-side and high-side gate drivers are matched to 4ns between the turn on and turn off of each other and are controlled throught the LI and HI input pins respectively. An on-chip 120V rated bootstrap diode eliminates the need to add discrete bootstrap diodes. Undervoltage lockout (UVLO) is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.

The UCC27311A is a robust gate driver designed to drive two N-channel MOSFETs in a half-bridge or synchronous buck configuration with an absolute maximum bootstrap voltage of 120V. Its 3.7A peak source and 4.5A peak sink current capability allows the UCC27311A to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.

The inputs are independent of supply voltage and are able to withstand -10V and +20V absolute maximum ratings. The low-side and high-side gate drivers are matched to 4ns between the turn on and turn off of each other and are controlled throught the LI and HI input pins respectively. An on-chip 120V rated bootstrap diode eliminates the need to add discrete bootstrap diodes. Undervoltage lockout (UVLO) is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.

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기술 자료

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유형 직함 날짜
* Data sheet UCC27311A 120V, 3.7A/4.5A Half-Bridge Driver with 8V UVLO and Enable datasheet PDF | HTML 2024/07/23
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 2024/03/25
Application note Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 2024/01/24
Application note How to Choose a Gate Driver for DC Motor Drives PDF | HTML 2023/10/05
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 2023/09/08
Application note Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 2021/04/07
Application note Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 2020/05/12
Application brief External Gate Resistor Selection Guide (Rev. A) 2020/02/28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020/02/28
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 2019/10/22
Application note Maximizing DC/DC converter designs with UCC27282 2019/01/18
Application note UCC27282 Improving motor drive system robustness 2019/01/11

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평가 보드

UCC27282EVM-335 — UCC27282 120V, 3A, 5V UVLO 고압측 저압측 게이트 드라이버 평가 모듈

UCC27282EVM-335 is designed for evaluating UCC27282DRC, which is a 120V half bridge gate driver with high source and sink peak current capability. This EVM could be served to evaluate the driver IC against its datasheet. The EVM can also be used as Driver IC component selection guide. The EVM can (...)
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주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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