UCC27288
- Drives two N-channel MOSFETs in high-side low-side configuration
- 16-ns typical propagation delay
- 12-ns rise, 10-ns typical fall time with 1800-pF load
- 1-ns typical delay matching
- Configurable external bootstrap diode
- 8-V typical undervoltage lockout
- Absolute maximum negative voltage handling on inputs (–5 V)
- Absolute maximum negative voltage handling on HS (–14 V)
- ±3-A peak output current
- Absolute maximum boot voltage 120 V
- Inputs are independent of each other and VDD
- Under voltage lockout for both channels
- Specified from –40°C to 140°C junction temperature
The UCC27288 is a robust N-channel MOSFET driver with a maximum switch node (HS) voltage rating of 100 V. It allows for two N-channel MOSFETs to be controlled in half-bridge or synchronous buck configuration based topologies. Its 3-A peak source and sink current along with low pull-up and pull-down resistance allows the UCC27288 to drive large power MOSFETs with minimum switching losses during the transition of the MOSFET Miller plateau. Since the inputs are independent of the supply voltage, UCC27288 can be used in conjunction with both analog and digital controllers. Two inputs are completely independent of each other and therefore provides added control design flexibility.
The input pins as well as the HS pin are able to tolerate significant negative voltage, which improves system robustness. The inputs are completely independent of each other. This allows for control flexibility where two outputs can be overlapped by overlapping inputs if needed. Small propagation delay and delay matching specifications minimize the dead-time requirement which improves system efficiency.
Under voltage lockout (UVLO) is provided for both the high-side and low-side driver stages forcing the outputs low if the VDD voltage is below the specified threshold. No integrated bootstrap diode allows user to use application-appropriate external bootstrap diode. UCC27288 is offered in an SOIC8 package to improve system robustness in harsh environments.
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기술 자료
유형 | 직함 | 날짜 | ||
---|---|---|---|---|
* | Data sheet | UCC27288 3-A 120-V Half-Bridge Driver with 8-V UVLO and External Bootstrap Diode datasheet (Rev. B) | PDF | HTML | 2022/04/22 |
Application note | Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET | PDF | HTML | 2024/03/25 | |
Application note | Understanding and comparing peak current capability of gate drivers | PDF | HTML | 2021/03/30 | |
EVM User's guide | Using the UCC27288EVM | 2020/06/16 | ||
Certificate | UCC27288EVM EU Declaration of Conformity (DoC) | 2020/05/13 | ||
Application note | Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. | 2020/05/12 | ||
Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020/02/28 | ||
Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020/02/28 |
설계 및 개발
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UCC27288EVM — UCC27288 100V, 3A, 8V UVLO 하프 브리지 게이트 드라이버 평가 모듈
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패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
---|---|---|
SOIC (D) | 8 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치
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