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UCC27212A-Q1
- AEC-Q100 qualified for automotive applications: device temperature grade 1
- –40°C to +150°C junction temperature range
- 5V turn-off Under Voltage Lockout (UVLO)
- Drives two N-channel MOSFETs in high-side and low-side configuration with independent inputs
- Maximum boot voltage 120V DC
- 3.7A source, 4.5A sink output currents
- Input pins can tolerate –10V to +20V and are independent of supply voltage range
- TTL compatible Inputs
- 7V to 17V VDD operating range, (20V ABS maximum)
- 7.2ns rise and 5.5ns fall time with 1000pF load
- Fast propagation delay times (20ns typical)
- 4ns typical delay matching
- Available in the SOIC8 (PowerPAD) package
The UCC27212A-Q1 device driver is based on the popular UCC27211 MOSFET drivers. In addition, UCC27212A-Q1 offers extended operating range all the way down to 5V which helps lower power losses.
The peak output pullup and pulldown current is 3.7A source and 4.5A sink. This allows for the ability to drive large power MOSFETs with minimized switching losses during the e Miller Plateau of the MOSFET.
The input structure can directly handle –10V, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a 20V maximum rating.
The switching node of the UCC27212A-Q1 (HS pin) can handle –(24V – VDD) maximum, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance. The UCC27212A-Q1 has increased hysteresis that allows for interface to analog or digital PWM controllers with enhanced noise immunity. The low-side and high-side gate drivers are independently controlled and matched to ns between the turn on and turn off of each other. An on-chip 120V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low drive voltage is below the specified threshold.
기술 자료
유형 | 직함 | 날짜 | ||
---|---|---|---|---|
* | Data sheet | UCC27212A-Q1 Automotive 120V, 3.7A/4.5A Half-Bridge Driver with 5V UVLO datasheet (Rev. A) | PDF | HTML | 2024/07/17 |
Functional safety information | UCC27211A-Q1 and UCC27212A-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. A) | PDF | HTML | 2024/10/03 | |
Application note | Understanding and comparing peak current capability of gate drivers | PDF | HTML | 2021/03/30 | |
Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020/02/28 | ||
Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020/02/28 | ||
More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018/10/29 |
설계 및 개발
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UCC27212EVM-328 — 전력계가 있는 UCC27212 평가 모듈
UCC272XXEVM-328 is designed for evaluating UCC27212DPR, which is a half bridge gate driver with 3.7-A source and 4.5-A sink peak current capability. This EVM could be served to evaluate the driver IC against its datsheet. The EVM can also be used as Driver IC component selection guide.
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TI 설계 및 시뮬레이션 환경용 PSpice는 기본 제공 라이브러리를 이용해 복잡한 혼합 신호 설계를 시뮬레이션할 수 있습니다. 레이아웃 및 제작에 (...)
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패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
---|---|---|
HSOIC (DDA) | 8 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치
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