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TLV9361 現行 單路、40-V、10.6-MHz 軌對軌輸出運算放大器 Wider supply range (4.5 V to 40 V), higher GBW (10.6 MHz), lower offset voltage (1.7 mV), lower noise (8.5 nV/√Hz), higher output current (60 mA)

產品詳細資料

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 38 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Rail-to-rail In to V+ GBW (typ) (MHz) 10 Slew rate (typ) (V/µs) 40 Vos (offset voltage at 25°C) (max) (mV) 6 Iq per channel (typ) (mA) 1.7 Vn at 1 kHz (typ) (nV√Hz) 12 Rating Catalog Operating temperature range (°C) -40 to 85 Offset drift (typ) (µV/°C) 3.2 Input bias current (max) (pA) 175 CMRR (typ) (dB) 98 Iout (typ) (A) 0.03 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3.1 Input common mode headroom (to positive supply) (typ) (V) 0 Output swing headroom (to negative supply) (typ) (V) 0.8 Output swing headroom (to positive supply) (typ) (V) -0.9
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 38 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Rail-to-rail In to V+ GBW (typ) (MHz) 10 Slew rate (typ) (V/µs) 40 Vos (offset voltage at 25°C) (max) (mV) 6 Iq per channel (typ) (mA) 1.7 Vn at 1 kHz (typ) (nV√Hz) 12 Rating Catalog Operating temperature range (°C) -40 to 85 Offset drift (typ) (µV/°C) 3.2 Input bias current (max) (pA) 175 CMRR (typ) (dB) 98 Iout (typ) (A) 0.03 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3.1 Input common mode headroom (to positive supply) (typ) (V) 0 Output swing headroom (to negative supply) (typ) (V) 0.8 Output swing headroom (to positive supply) (typ) (V) -0.9
PDIP (P) 8 92.5083 mm² 9.81 x 9.43 SOIC (D) 8 29.4 mm² 4.9 x 6
  • Direct Upgrades to TL05x, TL07x, and TL08x BiFET Operational Amplifiers
  • Greater Than 2× Bandwidth (10 MHz) and 3× Slew Rate (45 V/us) Than TL08x
  • On-Chip Offset Voltage Trimming for Improved DC Performance
  • Wider Supply Rails Increase Dynamic Signal Range to ±19 V

LinCMOS is a trademark of Texas Instruments.

  • Direct Upgrades to TL05x, TL07x, and TL08x BiFET Operational Amplifiers
  • Greater Than 2× Bandwidth (10 MHz) and 3× Slew Rate (45 V/us) Than TL08x
  • On-Chip Offset Voltage Trimming for Improved DC Performance
  • Wider Supply Rails Increase Dynamic Signal Range to ±19 V

LinCMOS is a trademark of Texas Instruments.

The TLE208x series of JFET-input operational amplifiers more than double the bandwidth and triple the slew rate of the TL07x and TL08x families of BiFET operational amplifiers. The TLE208x also have wider supply-voltage rails, increasing the dynamic-signal range for BiFET circuits to ±19 V. On-chip zener trimming of offset voltage yields precision grades for greater accuracy in dc-coupled applications. The TLE208x are pin-compatible with lower performance BiFET operational amplifiers for ease in improving performance in existing designs.

BiFET operational amplifiers offer the inherently higher input impedance of the JFET-input transistors, without sacrificing the output drive associated with bipolar amplifiers. This makes these amplifiers better suited for interfacing with high-impedance sensors or very low level ac signals. They also feature inherently better ac response than bipolar or CMOS devices having comparable power consumption.

Because BiFET operational amplifiers are designed for use with dual power supplies, care must be taken to observe common-mode input-voltage limits and output voltage swing when operating from a single supply. DC biasing of the input signal is required and loads should be terminated to a virtual ground node at mid-supply. Texas Instruments TLE2426 integrated virtual ground generator is useful when operating BiFET amplifiers from single supplies.

The TLE208x are fully specified at ±15 V and ±5 V. For operation in low-voltage and/or single-supply systems, Texas Instruments LinCMOS™ families of operational amplifiers (TLC- and TLV-prefix) are recommended. When moving from BiFET to CMOS amplifiers, particular attention should be paid to slew rate and bandwidth requirements and output loading.

For BiFET circuits requiring low noise and/or tighter dc precision, the TLE207x offer the same ac response as the TLE208x with more stringent dc and noise specifications.

The TLE208x series of JFET-input operational amplifiers more than double the bandwidth and triple the slew rate of the TL07x and TL08x families of BiFET operational amplifiers. The TLE208x also have wider supply-voltage rails, increasing the dynamic-signal range for BiFET circuits to ±19 V. On-chip zener trimming of offset voltage yields precision grades for greater accuracy in dc-coupled applications. The TLE208x are pin-compatible with lower performance BiFET operational amplifiers for ease in improving performance in existing designs.

BiFET operational amplifiers offer the inherently higher input impedance of the JFET-input transistors, without sacrificing the output drive associated with bipolar amplifiers. This makes these amplifiers better suited for interfacing with high-impedance sensors or very low level ac signals. They also feature inherently better ac response than bipolar or CMOS devices having comparable power consumption.

Because BiFET operational amplifiers are designed for use with dual power supplies, care must be taken to observe common-mode input-voltage limits and output voltage swing when operating from a single supply. DC biasing of the input signal is required and loads should be terminated to a virtual ground node at mid-supply. Texas Instruments TLE2426 integrated virtual ground generator is useful when operating BiFET amplifiers from single supplies.

The TLE208x are fully specified at ±15 V and ±5 V. For operation in low-voltage and/or single-supply systems, Texas Instruments LinCMOS™ families of operational amplifiers (TLC- and TLV-prefix) are recommended. When moving from BiFET to CMOS amplifiers, particular attention should be paid to slew rate and bandwidth requirements and output loading.

For BiFET circuits requiring low noise and/or tighter dc precision, the TLE207x offer the same ac response as the TLE208x with more stringent dc and noise specifications.

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* Data sheet Excalibur High-Speed JFET-Input Op Amps datasheet (Rev. B) 2001年 6月 14日

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