Gehäuseinformationen
| Gehäuse | Pins VSON (DRC) | 10 |
| Betriebstemperaturbereich (°C) -40 to 85 |
| Gehäusemenge | Träger 3.000 | LARGE T&R |
Merkmale von OPA1S2385
- Wide Bandwidth: 250 MHz
- High Slew Rate: 150 V/µs
- Rail-to-Rail Input/Output (I/O)
- Fast Settling
- Low Input Bias Current: 3 pA
- High Input Impedance: 1013 Ω || 2 pF
- SPST Switch:
- Low On-Resistance: 4 Ω
- Low Charge Injection: 1 pC
- Low Leakage Current: 10 pA
- Flexible Configuration:
- Transimpedance Gain
- External Hold Capacitor
- Post-Gain
- Single Supply: +2.7 V to +5.5 V
- Quiescent Current: 9.2 mA
- Small Package: 3-mm × 3-mm SON-10
- OPA1S2384: Internal Switch Active High
- OPA1S2385: Internal Switch Active Low
Beschreibung von OPA1S2385
The OPA1S2384 and OPA1S2385 (OPA1S238x) combine high bandwidth, FET-input operational amplifiers with a fast SPST CMOS switch designed for applications that require the tracking and capturing of fast signals.
By providing a 250-MHz gain bandwidth product and rail-to-rail input/output swings in single-supply operation, the OPA1S238x is capable of wideband transimpedance gain and large output signal swing simultaneously. Low input bias current and voltage noise (6 nV/√Hz) make it possible to amplify extremely low-level input signals for maximum signal-to-noise ratio.
The characteristics of the OPA1S238x make this device ideally suited for use as a wideband photodiode amplifier.
In addition, the CMOS switch and subsequent buffer amplifier allow the OPA1S238x to be easily configured as a fast sample-and-hold circuit. The external hold capacitor and post-gain options make the OPA1S238x easily adoptable to a wide range of speed and accuracy requirements. Note that the OPA1S2384 closes the internal switch with a logic-high signal, and the OPA1S2385 closes the internal switch with a logic-low signal.
The OPA1S238x are optimized for low-voltage operation from as low as +2.7 V up to +5.5 V. These devices are specified for a temperature range of –40°C to +85°C.