NEU

SN54SC6T06-SEP

AKTIV

Strahlungsfester invertierender 6-Bit-Open-Drain-Pegelumsetzer mit fester Richtung

Produktdetails

Technology family SCxT Vout (min) (V) 1.2 Vout (max) (V) 5.5 Features Balanced outputs, Over-voltage tolerant inputs, Voltage translation Input type TTL-Compatible CMOS Output type Open-drain Rating Space Operating temperature range (°C) -55 to 125
Technology family SCxT Vout (min) (V) 1.2 Vout (max) (V) 5.5 Features Balanced outputs, Over-voltage tolerant inputs, Voltage translation Input type TTL-Compatible CMOS Output type Open-drain Rating Space Operating temperature range (°C) -55 to 125
TSSOP (PW) 14 32 mm² 5 x 6.4
  • Vendor item drawing available, VID V62/24616
  • Total ionizing dose characterized at 30 krad (Si)
    • Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si)
  • Single-event effects (SEE) characterized:
    • Single event latch-up (SEL) immune to linear energy transfer (LET) = 43 MeV-cm2 /mg
    • Single event transient (SET) characterized to 43 MeV-cm2 /mg
  • Wide operating range of 1.2V to 5.5V
  • Single-supply translating gates at 5/3.3/2.5/1.8/1.2V VCC
    • TTL compatible inputs:
      • Up translation:
        • 1.8V – Inputs from 1.2V
        • 2.5V – Inputs from 1.8V
        • 3.3V – Inputs from 1.8V, 2.5V
        • 5.0V – Inputs from 2.5V, 3.3V
      • Down translation:
        • 1.2V – Inputs from 1.8V, 2.5V, 3.3V, 5.0V

        • 1.8V – Inputs from 2.5V, 3.3V, 5.0V
        • 2.5V – Inputs from 3.3V, 5.0V
        • 3.3V – Inputs from 5.0V
  • 5.5V tolerant input pins
  • Output drive up to 25mA AT 5V
  • Latch-up performance exceeds 250mA per JESD 17
  • Space enhanced plastic (SEP)
    • Controlled baseline
    • Gold bondwire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Product traceability
    • Meets NASAs ASTM E595 outgassing specification
  • Vendor item drawing available, VID V62/24616
  • Total ionizing dose characterized at 30 krad (Si)
    • Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si)
  • Single-event effects (SEE) characterized:
    • Single event latch-up (SEL) immune to linear energy transfer (LET) = 43 MeV-cm2 /mg
    • Single event transient (SET) characterized to 43 MeV-cm2 /mg
  • Wide operating range of 1.2V to 5.5V
  • Single-supply translating gates at 5/3.3/2.5/1.8/1.2V VCC
    • TTL compatible inputs:
      • Up translation:
        • 1.8V – Inputs from 1.2V
        • 2.5V – Inputs from 1.8V
        • 3.3V – Inputs from 1.8V, 2.5V
        • 5.0V – Inputs from 2.5V, 3.3V
      • Down translation:
        • 1.2V – Inputs from 1.8V, 2.5V, 3.3V, 5.0V

        • 1.8V – Inputs from 2.5V, 3.3V, 5.0V
        • 2.5V – Inputs from 3.3V, 5.0V
        • 3.3V – Inputs from 5.0V
  • 5.5V tolerant input pins
  • Output drive up to 25mA AT 5V
  • Latch-up performance exceeds 250mA per JESD 17
  • Space enhanced plastic (SEP)
    • Controlled baseline
    • Gold bondwire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Product traceability
    • Meets NASAs ASTM E595 outgassing specification

The SN54SC6T06-SEP device contains six independent inverters with open-drain outputs and extended voltage operation to allow for level translation. Each inverter performs the Boolean function Y = A in positive logic. The output level is referenced to the supply voltage (VCC) and supports 1.2V, 1.8V, 2.5V, 3.3V, and 5V CMOS levels.

The input is designed with a lower threshold circuit to support up translation for lower voltage CMOS inputs (for example 1.2V input to 1.8V output or 1.8V input to 3.3V output). Additionally, the 5V tolerant input pins enable down translation (for example 3.3V to 2.5V output).

The SN54SC6T06-SEP device contains six independent inverters with open-drain outputs and extended voltage operation to allow for level translation. Each inverter performs the Boolean function Y = A in positive logic. The output level is referenced to the supply voltage (VCC) and supports 1.2V, 1.8V, 2.5V, 3.3V, and 5V CMOS levels.

The input is designed with a lower threshold circuit to support up translation for lower voltage CMOS inputs (for example 1.2V input to 1.8V output or 1.8V input to 3.3V output). Additionally, the 5V tolerant input pins enable down translation (for example 3.3V to 2.5V output).

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Technische Dokumentation

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Typ Titel Datum
* Data sheet SN54SC6T06-SEP Radiation Tolerant, Hex Inverter Buffers/Drivers With Open-Drain Outputs datasheet PDF | HTML 19 Jan 2024
* Radiation & reliability report SN54SC6T06-SEP Production Flow and Reliability Report PDF | HTML 10 Apr 2024
* Radiation & reliability report SN54SC6T07-SEP Single Event Effects Radiation Report PDF | HTML 21 Feb 2024
* Radiation & reliability report SN54SC6T06-SEP Total Ionizing Dose (TID) Report PDF | HTML 08 Feb 2024
Application note Schematic Checklist - A Guide to Designing With Fixed or Direction Control Translators PDF | HTML 02 Okt 2024
Application brief TI Space Enhanced Plastic Logic Overview and Applications in Low-Earth Orbit Satellite Platforms PDF | HTML 10 Sep 2024
Application note Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators PDF | HTML 12 Jul 2024
Application note Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 03 Jul 2024

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