TXS0101

AKTIV

Bidirektionaler Spannungspegelumsetzer, 1 Bit, für Open-Drain- und Push-Pull-Anwendung

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Datenblatt

document-pdfAcrobat TXS0101 1-Bit Bidirectional Level-Shifting, Voltage-Level Translator With Auto-Direction-Sensing for Open-Drain and Push-Pull Applications datasheet (Rev. D) (Englisch) PDF | HTML

TXS0101

AKTIV

Datenblatt

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Produktdetails

Technology family

TXS

Bits (#)

1

Data rate (max) (Mbps)

24

High input voltage (min) (V)

1.45

High input voltage (max) (V)

5.5

Vout (min) (V)

1.65

Vout (max) (V)

5.5

IOH (max) (mA)

0

IOL (max) (mA)

0

Supply current (max) (µA)

14.4

Features

Edge rate accelerator, Output enable, Partial power down (Ioff), Vcc isolation

Input type

Transmission Gate

Output type

3-State, Transmission Gate

Rating

Catalog

Operating temperature range (°C)

-40 to 85

Technology family

TXS

Bits (#)

1

Data rate (max) (Mbps)

24

High input voltage (min) (V)

1.45

High input voltage (max) (V)

5.5

Vout (min) (V)

1.65

Vout (max) (V)

5.5

IOH (max) (mA)

0

IOL (max) (mA)

0

Supply current (max) (µA)

14.4

Features

Edge rate accelerator, Output enable, Partial power down (Ioff), Vcc isolation

Input type

Transmission Gate

Output type

3-State, Transmission Gate

Rating

Catalog

Operating temperature range (°C)

-40 to 85

DSBGA (YZP)

6

2.1875 mm² 1.75 x 1.25

SOT-23 (DBV)

6

8.12 mm² 2.9 x 2.8

SOT-5X3 (DRL)

6

2.56 mm² 1.6 x 1.6

SOT-SC70 (DCK)

6

4.2 mm² 2 x 2.1

Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
ESD Protection Exceeds JESD 22
- A Port
  - 2500 V Human-Body Model (A114-B)
  - 200 V Machine Model (A115-A)
  - 1500 V Charged-Device Model (C101)
- B Port
  - 8 kV Human-Body Model (A114-B)
  - 200 V Machine Model (A115-A)
  - 1500 V Charged-Device Model (C101)
No Direction-Control Signal Needed
Maximum Data Rates
- 24 Mbps (Push Pull)
- 2 Mbps (Open Drain)
Available in the Texas Instruments NanoFree™ Package
1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B port (V_CCA ≤ V_CCB)
V_CC Isolation Feature – If Either V_CC Input Is at GND, Both Ports Are in the High-Impedance State
No Power-Supply Sequencing Required – Either V_CCA or V_CCB Can be Ramped First
I_off Supports Partial-Power-Down Mode Operation

Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
ESD Protection Exceeds JESD 22
- A Port
  - 2500 V Human-Body Model (A114-B)
  - 200 V Machine Model (A115-A)
  - 1500 V Charged-Device Model (C101)
- B Port
  - 8 kV Human-Body Model (A114-B)
  - 200 V Machine Model (A115-A)
  - 1500 V Charged-Device Model (C101)
No Direction-Control Signal Needed
Maximum Data Rates
- 24 Mbps (Push Pull)
- 2 Mbps (Open Drain)
Available in the Texas Instruments NanoFree™ Package
1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B port (V_CCA ≤ V_CCB)
V_CC Isolation Feature – If Either V_CC Input Is at GND, Both Ports Are in the High-Impedance State
No Power-Supply Sequencing Required – Either V_CCA or V_CCB Can be Ramped First
I_off Supports Partial-Power-Down Mode Operation

This one-bit non-inverting translator uses two separate configurable power-supply rails. The A port is designed to track V_CCA. V_CCA accepts any supply voltage from 1.65 V to 3.6 V. The B port is designed to track V_CCB. V_CCA must be less than or equal to V_CCB. V_CCB accepts any supply voltage from 2.3 V to 5.5 V. This allows for low voltage bidirectional translation between any of the 1.8 V, 2.5 V, 3.3 V, and 5 V voltage nodes.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pull-down resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

This one-bit non-inverting translator uses two separate configurable power-supply rails. The A port is designed to track V_CCA. V_CCA accepts any supply voltage from 1.65 V to 3.6 V. The B port is designed to track V_CCB. V_CCA must be less than or equal to V_CCB. V_CCB accepts any supply voltage from 2.3 V to 5.5 V. This allows for low voltage bidirectional translation between any of the 1.8 V, 2.5 V, 3.3 V, and 5 V voltage nodes.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pull-down resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

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	Typ	Titel		Datum
*	Data sheet	TXS0101 1-Bit Bidirectional Level-Shifting, Voltage-Level Translator With Auto-Direction-Sensing for Open-Drain and Push-Pull Applications datasheet (Rev. D)	PDF \| HTML	22 Jun 2017
	Application note	Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators	PDF \| HTML	12 Jul 2024
	Application note	Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A)	PDF \| HTML	03 Jul 2024
	Application brief	Integrated vs. Discrete Open Drain Level Translation	PDF \| HTML	09 Jan 2024
	Application note	Leveraging Edge Rate Accelerators with Auto-Sensing Level Shifters	PDF \| HTML	29 Sep 2023
	Application note	Do’s and Don’ts for TXB and TXS Voltage Level-Shifters with Edge Rate Accelerato	PDF \| HTML	28 Jun 2023
	EVM User's guide	TXS-EVM User's Guide (Rev. B)	PDF \| HTML	08 Jun 2021
	Selection guide	Voltage Translation Buying Guide (Rev. A)		15 Apr 2021
	Application note	Effects of pullup and pulldown resistors on TXS and TXB devices (Rev. A)		28 Mär 2018
	Application note	Factors Affecting VOL for TXS and LSF Auto-bidirectional Translation Devices		19 Nov 2017
	Application note	Biasing Requirements for TXS, TXB, and LSF Auto-Bidirectional Translators		30 Okt 2017
	Application note	A Guide to Voltage Translation With TXS-Type Translators		29 Jun 2010

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