TXS4555

AKTIV

Stromversorgung für SIM-Karten mit Pegelumsetzer

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Produktdetails

Technology family TXS Applications SIM Card Rating Catalog Operating temperature range (°C) -40 to 85
Technology family TXS Applications SIM Card Rating Catalog Operating temperature range (°C) -40 to 85
UQFN (RUT) 12 3.4 mm² 2 x 1.7 VQFN (RGT) 16 9 mm² 3 x 3
  • Level Translator
    • VCC Range of 1.65 V to 3.3 V
    • VBATT Range from 2.3 to 5.5V
  • Low-Dropout (LDO) Regulator
    • 50-mA LDO Regulator With Enable
    • 1.8-V or 2.95-V Selectable Output Voltage
    • 2.3-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 100mV (Max) at 50mA
  • Incorporates Shutdown Feature for the SIM Card Signals According to ISO-7816-3
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-B)
    • 500-V Charged-Device Model (C101)
    • 8kV HBM for SIM Pins
  • Package
    • 16-Pin QFN (3 mm x 3 mm)
    • 12-Pin QFN (2mm x 1.7mm)

  • Level Translator
    • VCC Range of 1.65 V to 3.3 V
    • VBATT Range from 2.3 to 5.5V
  • Low-Dropout (LDO) Regulator
    • 50-mA LDO Regulator With Enable
    • 1.8-V or 2.95-V Selectable Output Voltage
    • 2.3-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 100mV (Max) at 50mA
  • Incorporates Shutdown Feature for the SIM Card Signals According to ISO-7816-3
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-B)
    • 500-V Charged-Device Model (C101)
    • 8kV HBM for SIM Pins
  • Package
    • 16-Pin QFN (3 mm x 3 mm)
    • 12-Pin QFN (2mm x 1.7mm)

The TXS4555 is a complete Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with a SIM card to store I/O for mobile handset applications. The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces, a low-dropout (LDO) voltage regulator that has output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces.

Note: The Exposed center thermal pad must be connected to Ground

The device has two supply voltage pins. VCC can be operated over the full range of 1.65 V to 3.3 V and VBATT from 2.3 to 5.5 V. VPWR is set to either 1.8 V or 2.95 V and is supplied by an internal LDO. The integrated LDO accepts input voltages as high as 5.5 V and outputs either 1.8 V or 2.95 V at 50 mA to the B-side circuitry and to the external SIM card. The TXS4555 enables system designers to easily interface low-voltage microprocessors to SIM cards operating at 1.8 V or 2.95 V.

The TXS4555 also incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification for SIM cards. Proper shutdown of the SIM card signals helps in prevention of corruption of data during accidental shutdown of the phone. The device also has 8kV HBM protection for the SIM pins and standard 2kV HBM protection for all the other pins.

The TXS4555 is a complete Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with a SIM card to store I/O for mobile handset applications. The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces, a low-dropout (LDO) voltage regulator that has output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces.

Note: The Exposed center thermal pad must be connected to Ground

The device has two supply voltage pins. VCC can be operated over the full range of 1.65 V to 3.3 V and VBATT from 2.3 to 5.5 V. VPWR is set to either 1.8 V or 2.95 V and is supplied by an internal LDO. The integrated LDO accepts input voltages as high as 5.5 V and outputs either 1.8 V or 2.95 V at 50 mA to the B-side circuitry and to the external SIM card. The TXS4555 enables system designers to easily interface low-voltage microprocessors to SIM cards operating at 1.8 V or 2.95 V.

The TXS4555 also incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification for SIM cards. Proper shutdown of the SIM card signals helps in prevention of corruption of data during accidental shutdown of the phone. The device also has 8kV HBM protection for the SIM pins and standard 2kV HBM protection for all the other pins.

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Technische Dokumentation

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Alle anzeigen 4
Typ Titel Datum
* Data sheet 1.8V/3V SIM CARD POWER SUPPLY WITH LEVEL TRANSLATOR datasheet (Rev. B) 27 Aug 2013
Application note Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators PDF | HTML 12 Jul 2024
Application note Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 03 Jul 2024
Selection guide Voltage Translation Buying Guide (Rev. A) 15 Apr 2021

Design und Entwicklung

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Simulationsmodell

TXS4555 IBIS Model

SBOM452.ZIP (47 KB) - IBIS Model
Gehäuse Pins CAD-Symbole, Footprints und 3D-Modelle
UQFN (RUT) 12 Ultra Librarian
VQFN (RGT) 16 Ultra Librarian

Bestellen & Qualität

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  • Blei-Finish/Ball-Material
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  • Materialinhalt
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  • Kontinuierliches Zuverlässigkeitsmonitoring
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