SN74ABT5403

ACTIVO

Inversores de 12 canales, 4,5 V a 5,5 V con entradas CMOS compatibles con TTL y salidas de 3 estados

Detalles del producto

Technology family ABT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 12 IOL (max) (mA) 12 IOH (max) (mA) -12 Supply current (max) (µA) 45000 Input type TTL-Compatible CMOS Output type 3-State Features Balanced outputs, Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Rating Catalog Operating temperature range (°C) -40 to 85
Technology family ABT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 12 IOL (max) (mA) 12 IOH (max) (mA) -12 Supply current (max) (µA) 45000 Input type TTL-Compatible CMOS Output type 3-State Features Balanced outputs, Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Rating Catalog Operating temperature range (°C) -40 to 85
SOIC (DW) 28 184.37 mm² 17.9 x 10.3
  • Output Ports Have Equivalent 25- Series Resistors, So No External Resistors Are Required
  • State-of-the-Art EPIC-IIBTM BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • Typical VOLV (Output Undershoot) < 0.5 V at VCC = 5 V, TA = 25°C
  • Package Options Include Plastic Small-Outline (DW) Package, Ceramic Chip Carriers (FK), and DIPs (JT)

     

    EPIC-IIB is a trademark of Texas Instruments Incorporated.

  • Output Ports Have Equivalent 25- Series Resistors, So No External Resistors Are Required
  • State-of-the-Art EPIC-IIBTM BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • Typical VOLV (Output Undershoot) < 0.5 V at VCC = 5 V, TA = 25°C
  • Package Options Include Plastic Small-Outline (DW) Package, Ceramic Chip Carriers (FK), and DIPs (JT)

     

    EPIC-IIB is a trademark of Texas Instruments Incorporated.

These 12-bit buffers and line drivers are designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters.

The 3-state control gate is a 2-input AND gate with active-low inputs so that if either output-enable ( or) input is high, all 12 outputs are in the high-impedance state. These devices provide inverted data.

The outputs, which are designed to source or sink up to 12 mA, include equivalent 25- series resistors to reduce overshoot and undershoot.

To ensure the high-impedance state during power up or power down, should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT5403 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT5403 is characterized for operation from -40°C to 85°C.

 

 

These 12-bit buffers and line drivers are designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters.

The 3-state control gate is a 2-input AND gate with active-low inputs so that if either output-enable ( or) input is high, all 12 outputs are in the high-impedance state. These devices provide inverted data.

The outputs, which are designed to source or sink up to 12 mA, include equivalent 25- series resistors to reduce overshoot and undershoot.

To ensure the high-impedance state during power up or power down, should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT5403 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT5403 is characterized for operation from -40°C to 85°C.

 

 

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Documentación técnica

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Tipo Título Fecha
* Data sheet 12-Bit Line/Memory Drivers With 3-State Outputs datasheet (Rev. B) 01 ene 1997
Application note Implications of Slow or Floating CMOS Inputs (Rev. E) 26 jul 2021
Selection guide Logic Guide (Rev. AB) 12 jun 2017
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 02 dic 2015
User guide LOGIC Pocket Data Book (Rev. B) 16 ene 2007
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 jul 2004
Application note Selecting the Right Level Translation Solution (Rev. A) 22 jun 2004
Application note Quad Flatpack No-Lead Logic Packages (Rev. D) 16 feb 2004
Application note TI IBIS File Creation, Validation, and Distribution Processes 29 ago 2002
Application note Power-Up 3-State (PU3S) Circuits in TI Standard Logic Devices 10 may 2002
Selection guide Advanced Bus Interface Logic Selection Guide 09 ene 2001
Application note Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 01 ago 1997
Application note Advanced BiCMOS Technology (ABT) Logic Characterization Information (Rev. B) 01 jun 1997
Application note Designing With Logic (Rev. C) 01 jun 1997
Application note Advanced BiCMOS Technology (ABT) Logic Enables Optimal System Design (Rev. A) 01 mar 1997
Application note Family of Curves Demonstrating Output Skews for Advanced BiCMOS Devices (Rev. A) 01 dic 1996
Application note Input and Output Characteristics of Digital Integrated Circuits 01 oct 1996
Application note Live Insertion 01 oct 1996
Application note Understanding Advanced Bus-Interface Products Design Guide 01 may 1996

Diseño y desarrollo

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Modelo de simulación

SN74ABT5403 Behavioral SPICE Model

SCBM137.ZIP (7 KB) - PSpice Model
Encapsulado Pines Símbolos CAD, huellas y modelos 3D
SOIC (DW) 28 Ultra Librarian

Pedidos y calidad

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  • REACH
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  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
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  • Lugar de fabricación
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