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Búferes y controladores no inversores

SN74ABT541B-EP

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Búferes de 8 canales, de 4.5 V a 5.5 V con entradas CMOS compatibles con TTL y salidas de 3 estados

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SN74ABT541B-EP

ACTIVO
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Detalles del producto

Technology family ABT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 64 Supply current (max) (µA) 30000 IOH (max) (mA) -32 Input type TTL-Compatible CMOS Output type 3-State Features Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 85
Technology family ABT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 64 Supply current (max) (µA) 30000 IOH (max) (mA) -32 Input type TTL-Compatible CMOS Output type 3-State Features Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 85
TSSOP (PW) 20 41.6 mm² 6.5 x 6.4
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • High-Drive Outputs (–32-mA IOH, 64-mA IOL)

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
EPIC-IIB is a trademark of Texas Instruments.
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • High-Drive Outputs (–32-mA IOH, 64-mA IOL)

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
EPIC-IIB is a trademark of Texas Instruments.

The SN74ABT541B octal buffer and line driver is ideal for driving bus lines or buffering memory address registers. The device features inputs and outputs on opposite sides of the package to facilitate printed circuit board layout.

The 3-state control gate is a two-input AND gate with active-low inputs so that if either output-enable (OE1\ or OE2)\ input is high, all eight outputs are in the high-impedance state.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74ABT541B octal buffer and line driver is ideal for driving bus lines or buffering memory address registers. The device features inputs and outputs on opposite sides of the package to facilitate printed circuit board layout.

The 3-state control gate is a two-input AND gate with active-low inputs so that if either output-enable (OE1\ or OE2)\ input is high, all eight outputs are in the high-impedance state.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
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Documentación técnica

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Tipo Título Fecha
* Data sheet SN74ABT541B-EP datasheet 06 ene 2004
* VID SN74ABT541B-EP VID V6204700 21 jun 2016
Application note Implications of Slow or Floating CMOS Inputs (Rev. E) 26 jul 2021
Selection guide Logic Guide (Rev. AB) 12 jun 2017
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 02 dic 2015
User guide LOGIC Pocket Data Book (Rev. B) 16 ene 2007
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 jul 2004
Application note Selecting the Right Level Translation Solution (Rev. A) 22 jun 2004
Application note Quad Flatpack No-Lead Logic Packages (Rev. D) 16 feb 2004
Application note TI IBIS File Creation, Validation, and Distribution Processes 29 ago 2002
Application note Power-Up 3-State (PU3S) Circuits in TI Standard Logic Devices 10 may 2002
Selection guide Advanced Bus Interface Logic Selection Guide 09 ene 2001
Application note Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 01 ago 1997
Application note Advanced BiCMOS Technology (ABT) Logic Characterization Information (Rev. B) 01 jun 1997
Application note Designing With Logic (Rev. C) 01 jun 1997
Application note Advanced BiCMOS Technology (ABT) Logic Enables Optimal System Design (Rev. A) 01 mar 1997
Application note Family of Curves Demonstrating Output Skews for Advanced BiCMOS Devices (Rev. A) 01 dic 1996
Application note Input and Output Characteristics of Digital Integrated Circuits 01 oct 1996
Application note Live Insertion 01 oct 1996
Application note Understanding Advanced Bus-Interface Products Design Guide 01 may 1996

Diseño y desarrollo

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