DRV8305-Q1

활성

오토모티브 12V 배터리 3상 스마트 게이트 드라이버(등급 0 및 등급 1)

제품 상세 정보

Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 4.4 Vs ABS (max) (V) 45 Features Current sense Amplifier, LDO, SPI/I2C, Smart Gate Drive, Watchdog timer Operating temperature range (°C) -40 to 150
Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 4.4 Vs ABS (max) (V) 45 Features Current sense Amplifier, LDO, SPI/I2C, Smart Gate Drive, Watchdog timer Operating temperature range (°C) -40 to 150
HTQFP (PHP) 48 81 mm² 9 x 9
  • AEC-Q100 qualified for automotive applications
  • Ambient operating temperature ranges:
    • Temperature grade 0 (E): –40°C to +150°C
    • Temperature grade 1 (Q): –40°C to +125°C
  • 4.4-V to 45-V operating voltage
  • 1.25-A and 1-A Peak gate drive currents
  • Smart gate drive architecture (IDRIVE & TDRIVE)
  • Programmable high- and low-side slew-rate control
  • Charge-pump gate driver for 100% duty cycle
  • Three integrated current-shunt amplifiers
  • Integrated 50-mA LDO (3.3-V and 5-V option)
  • 3-PWM or 6-PWM input control up to 200 kHz
  • Single PWM-mode commutation capability
  • Serial Peripheral Interface (SPI) for device settings and fault reporting
  • Thermally-enhanced 48-Pin HTQFP
  • Protection features:
    • Fault diagnostics and MCU watchdog
    • Programmable dead-time control
    • MOSFET shoot-through prevention
    • MOSFET VDS overcurrent monitors
    • Gate-driver fault detection
    • Reverse battery-protection support
    • Limp home-mode support
    • Overtemperature warning and shutdown
  • AEC-Q100 qualified for automotive applications
  • Ambient operating temperature ranges:
    • Temperature grade 0 (E): –40°C to +150°C
    • Temperature grade 1 (Q): –40°C to +125°C
  • 4.4-V to 45-V operating voltage
  • 1.25-A and 1-A Peak gate drive currents
  • Smart gate drive architecture (IDRIVE & TDRIVE)
  • Programmable high- and low-side slew-rate control
  • Charge-pump gate driver for 100% duty cycle
  • Three integrated current-shunt amplifiers
  • Integrated 50-mA LDO (3.3-V and 5-V option)
  • 3-PWM or 6-PWM input control up to 200 kHz
  • Single PWM-mode commutation capability
  • Serial Peripheral Interface (SPI) for device settings and fault reporting
  • Thermally-enhanced 48-Pin HTQFP
  • Protection features:
    • Fault diagnostics and MCU watchdog
    • Programmable dead-time control
    • MOSFET shoot-through prevention
    • MOSFET VDS overcurrent monitors
    • Gate-driver fault detection
    • Reverse battery-protection support
    • Limp home-mode support
    • Overtemperature warning and shutdown

The DRV8305-Q1 device is a gate driver IC for three-phase motor-drive applications. The device provides three high-accuracy half-bridge drivers, each capable of driving a high-side and low-side N-channel MOSFET. A charge pump driver supports 100% duty cycle and low-voltage operation for cold crank situations. The device can tolerate load dump voltages up to 45-V.

The DRV8305-Q1 device includes three bidirectional current-shunt amplifiers for accurate low-side current measurements that support variable gain settings and an adjustable offset reference.

The DRV8305-Q1 device has an integrated voltage regulator to support an MCU or other system power requirements. The voltage regulator can be interfaced directly with a LIN physical interface to allow low-system standby and sleep currents.

The gate driver uses automatic handshaking when switching to prevent current shoot through. The VDS of both the high-side and low-side MOSFETs is accurately sensed to protect the external MOSFETs from overcurrent conditions. The SPI provides detailed fault reporting, diagnostics, and device configurations such as gain options for the current shunt amplifier, individual MOSFET overcurrent detection, and gate-drive slew-rate control.

Device Options:

  • DRV8305NQ: Grade 1 with voltage reference
  • DRV83053Q: Grade 1 with 3.3-V, 50-mA LDO
  • DRV83055Q: Grade 1 with 5-V, 50-mA LDO
  • DRV8305NE: Grade 0 with voltage reference

The DRV8305-Q1 device is a gate driver IC for three-phase motor-drive applications. The device provides three high-accuracy half-bridge drivers, each capable of driving a high-side and low-side N-channel MOSFET. A charge pump driver supports 100% duty cycle and low-voltage operation for cold crank situations. The device can tolerate load dump voltages up to 45-V.

The DRV8305-Q1 device includes three bidirectional current-shunt amplifiers for accurate low-side current measurements that support variable gain settings and an adjustable offset reference.

The DRV8305-Q1 device has an integrated voltage regulator to support an MCU or other system power requirements. The voltage regulator can be interfaced directly with a LIN physical interface to allow low-system standby and sleep currents.

The gate driver uses automatic handshaking when switching to prevent current shoot through. The VDS of both the high-side and low-side MOSFETs is accurately sensed to protect the external MOSFETs from overcurrent conditions. The SPI provides detailed fault reporting, diagnostics, and device configurations such as gain options for the current shunt amplifier, individual MOSFET overcurrent detection, and gate-drive slew-rate control.

Device Options:

  • DRV8305NQ: Grade 1 with voltage reference
  • DRV83053Q: Grade 1 with 3.3-V, 50-mA LDO
  • DRV83055Q: Grade 1 with 5-V, 50-mA LDO
  • DRV8305NE: Grade 0 with voltage reference

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관심 가지실만한 유사 제품

open-in-new 대안 비교
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기술 자료

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17개 모두 보기
유형 직함 날짜
* Data sheet DRV8305-Q1 Three-Phase Automotive Smart Gate Driver With Three Integrated Current Shunt Amplifiers and Voltage Regulator datasheet (Rev. D) PDF | HTML 2019/07/19
White paper Understanding Functional Safety FIT Base Failure Rate Estimates per IEC 62380 and SN 29500 (Rev. A) PDF | HTML 2024/04/30
Application note Best Practices for Board Layout of Motor Drivers (Rev. B) PDF | HTML 2021/10/14
Application note System Design Considerations for High-Power Motor Driver Applications PDF | HTML 2021/06/22
Application note Understanding Smart Gate Drive (Rev. D) 2021/03/01
Application brief Low Voltage Motor Drive Operation With Smart Gate Drive 2018/12/20
Application brief Designing High-Side and 3-Phase Isolator MOSFET Circuits in Motor Apps 2018/05/09
Application note Dual Motor Ctl Using FCL and Perf Analysis Using SFRA on TMS320F28379D LaunchPad (Rev. A) 2018/03/20
Application note Performance Analysis of Fast Current Loop (FCL) in Servo 2018/03/06
Technical article Six weird ways to design with a brushless-DC driver PDF | HTML 2017/08/28
Technical article Why are you still driving automotive motors with relays? PDF | HTML 2017/07/13
Technical article The power to innovate industrial design PDF | HTML 2017/03/27
Technical article The other motors in electric vehicle systems (part 4) PDF | HTML 2016/11/17
Technical article The other motors in electric vehicle systems (part 3) PDF | HTML 2016/10/31
Technical article The other motors in electric vehicle systems (part 2) PDF | HTML 2016/10/17
Technical article How motor drivers aid in an automobile’s “limp-home” mode PDF | HTML 2016/10/06
Application note Sensored 3-Phase BLDC Motor Control Using MSP430 2011/07/20

설계 및 개발

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The BOOSTXL-DRV8305EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8305 motor gate driver and CSD18540Q5B NexFET™ power MOSFET. The module has individual DC bus and phase voltage sense as well as individual low-side current shunt sense for sensorless BLDC algorithms. The module (...)

사용 설명서: PDF
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The DRV8305-Q1EVM evaluation module (EVM) is a 4.4 V to 45 V, 25 A, 3-phase motor drive and control system based on the DRV8305-Q1 automotive motor gate driver, TMS320F28027 motor control microcontroller, and CSD18540Q5B NexFET™ power MOSFET. The EVM allows for simple evaluation of the (...)

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회로도: PDF
패키지 CAD 기호, 풋프린트 및 3D 모델
HTQFP (PHP) 48 Ultra Librarian

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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