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精密度運算放大器 (Vos<1mV)

TLC1079

現行

四路微功耗精密低電壓運算放大器

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產品規格表

現在提供此產品的更新版本

open-in-new 比較替代產品
功能相同，但引腳輸出與所比較的裝置不同
最新 TLV9144 現行 四路、18V、125kHz、微功耗 (7μA)、低輸入偏壓電流 (0.5pA) RRIO 運算放大器 Improved power consumption (0.007 mA), rail-to-rail performance (In, Out) and offset drift (0.5 µV/°C).

TLC1079

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 1.4 Vos (offset voltage at 25°C) (max) (mV) 0.85 Offset drift (typ) (µV/°C) 1.1 Input bias current (max) (pA) 60 GBW (typ) (MHz) 0.1 Slew rate (typ) (V/µs) 0.032 Rail-to-rail In to V- Iq per channel (typ) (mA) 0.01 Vn at 1 kHz (typ) (nV√Hz) 68 CMRR (typ) (dB) 95 Rating Catalog Operating temperature range (°C) 0 to 70 Iout (typ) (A) 0.01 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -0.8 Output swing headroom (to negative supply) (typ) (V) 0.025 Output swing headroom (to positive supply) (typ) (V) -0.8
Number of channels 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 1.4 Vos (offset voltage at 25°C) (max) (mV) 0.85 Offset drift (typ) (µV/°C) 1.1 Input bias current (max) (pA) 60 GBW (typ) (MHz) 0.1 Slew rate (typ) (V/µs) 0.032 Rail-to-rail In to V- Iq per channel (typ) (mA) 0.01 Vn at 1 kHz (typ) (nV√Hz) 68 CMRR (typ) (dB) 95 Rating Catalog Operating temperature range (°C) 0 to 70 Iout (typ) (A) 0.01 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -0.8 Output swing headroom (to negative supply) (typ) (V) 0.025 Output swing headroom (to positive supply) (typ) (V) -0.8
PDIP (N) 14 181.42 mm² 19.3 x 9.4 SOIC (D) 14 51.9 mm² 8.65 x 6
  • Power Dissipation as Low as 10 uW Typ Per Amplifier
  • Operates on a Single Silver-Oxide Watch Battery, VDD = 1.4 V Min
  • VIO...450 uV/850 uV Max in DIP and Small-Outline Package (TLC1078/79)
  • Input Offset Voltage Drift...0.1 uV/Month Typ, Including the First 30 Days
  • High-impedance LinCMOSTM Inputs
  • IIB = 0.6 pA Typ
  • High Open-Loop Gain...800000 Typ
  • Output Drive Capability > 20 mA
  • Slew Rate...47 V/ms Typ
  • Common-Mode Input Voltage Range Extends Below the Negative Rail
  • Output Voltage Range Includes Negative Rail
  • On-Chip ESD-Protection Circuitry
  • Small-Outline Package Option Also Available in Tape and Reel

LinCMOS is a trademark of Texas Instruments Incorporated.
  • Power Dissipation as Low as 10 uW Typ Per Amplifier
  • Operates on a Single Silver-Oxide Watch Battery, VDD = 1.4 V Min
  • VIO...450 uV/850 uV Max in DIP and Small-Outline Package (TLC1078/79)
  • Input Offset Voltage Drift...0.1 uV/Month Typ, Including the First 30 Days
  • High-impedance LinCMOSTM Inputs
  • IIB = 0.6 pA Typ
  • High Open-Loop Gain...800000 Typ
  • Output Drive Capability > 20 mA
  • Slew Rate...47 V/ms Typ
  • Common-Mode Input Voltage Range Extends Below the Negative Rail
  • Output Voltage Range Includes Negative Rail
  • On-Chip ESD-Protection Circuitry
  • Small-Outline Package Option Also Available in Tape and Reel

LinCMOS is a trademark of Texas Instruments Incorporated.

The TLC107x operational amplifiers offer ultra-low offset voltage, high gain, 110-kHz bandwidth, 47-V/ms slew rate, and just 150-uW power dissipation per amplifier.

With a supply voltage of 1.4 V, common-mode input to the negative rail, and output swing to the negative rail, the TLC107xC is an ideal solution for low-voltage battery-operated systems. The 20-mA output drive capability means that the TLC107x can easily drive small resistive and large capacitive loads when needed, while maintaining ultra-low standby power dissipation.

Since this device is functionally compatible as well as pin compatible with the TLC27L2/4 and TLC27L7/9, the TLC107x easily upgrades existing designs that can benefit from its improved performance.

The TLC107x incorporates internal ESD-protection circuits that will prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised when handling these devices as exposure to ESD may result in degradation of the device parametric performance. The TLC107x design also inhibits latch-up of the device inputs and outputs even with surge currents as large 100 mA.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C. The wide range of packaging options includes small-outline and chip-carrier versions for high-density system applications.

The TLC107x operational amplifiers offer ultra-low offset voltage, high gain, 110-kHz bandwidth, 47-V/ms slew rate, and just 150-uW power dissipation per amplifier.

With a supply voltage of 1.4 V, common-mode input to the negative rail, and output swing to the negative rail, the TLC107xC is an ideal solution for low-voltage battery-operated systems. The 20-mA output drive capability means that the TLC107x can easily drive small resistive and large capacitive loads when needed, while maintaining ultra-low standby power dissipation.

Since this device is functionally compatible as well as pin compatible with the TLC27L2/4 and TLC27L7/9, the TLC107x easily upgrades existing designs that can benefit from its improved performance.

The TLC107x incorporates internal ESD-protection circuits that will prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised when handling these devices as exposure to ESD may result in degradation of the device parametric performance. The TLC107x design also inhibits latch-up of the device inputs and outputs even with surge currents as large 100 mA.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C. The wide range of packaging options includes small-outline and chip-carrier versions for high-density system applications.
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類型 標題 日期
* Data sheet LinCMOS uPower Precision Op Amps datasheet (Rev. A) 2001年 3月 21日

訂購與品質

內含資訊：
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊：
  • 晶圓廠位置
  • 組裝地點

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