제품 상세 정보

Current consumption (mA) 120 Frequency (min) (MHz) 3200 Frequency (max) (MHz) 4200 Gain (typ) (dB) 18.8 Noise figure (typ) (dB) 3.8 OIP3 (typ) (dBm) 31.5 P1dB (typ) (dBm) 18 Number of channels 1 Operating temperature range (°C) -40 to 105 Type Active Balun Rating Catalog
Current consumption (mA) 120 Frequency (min) (MHz) 3200 Frequency (max) (MHz) 4200 Gain (typ) (dB) 18.8 Noise figure (typ) (dB) 3.8 OIP3 (typ) (dBm) 31.5 P1dB (typ) (dBm) 18 Number of channels 1 Operating temperature range (°C) -40 to 105 Type Active Balun Rating Catalog
WQFN (RRL) 12 4 mm² 2 x 2
  • Single-Channel, Narrow-Band Differential Input to Single-Ended Output RF Gain Block Amplifier
  • Supports 3.2 – 4.2 GHz 1-dB BW Typical
  • 18 dB Typical Gain Across the Band
  • 3.8 dB Noise Figure
  • 31.5 dBm OIP3
  • 18 dBm Output P1dB
  • 395 mW Power Consumption on Single +3.3 V Supply
  • Up to 105°C TC Operating Temperature
  • Single-Channel, Narrow-Band Differential Input to Single-Ended Output RF Gain Block Amplifier
  • Supports 3.2 – 4.2 GHz 1-dB BW Typical
  • 18 dB Typical Gain Across the Band
  • 3.8 dB Noise Figure
  • 31.5 dBm OIP3
  • 18 dBm Output P1dB
  • 395 mW Power Consumption on Single +3.3 V Supply
  • Up to 105°C TC Operating Temperature

LMH9135 are high-performance, single-channel, differential input to single-ended output transmit radio frequency (RF) gain block amplifiers that support 3.2 – 4.2 GHz frequency band. The device can support the requirements for next generation 5G active antenna systems (AAS) or small-cell applications while driving the input of a power amplifier (PA). The RF amplifier provides 18 dB typical gain with good linearity performance of +31.5 dBm Output IP3, while maintaining less than 4 dB noise figure across the whole 1 dB bandwidth. The device is internally matched for 100-Ω differential input impedance providing easy interface with an RF-sampling or Zero-IF analog front-end (AFE) at the input. Also, the device is internally matched for 50-Ω single-ended output impedance that is required to easily interface with a post-amplifier, surface acoustic wave (SAW) filter, or power amplifier (PA).

Operating on a single 3.3 V supply, the device consumes about 395 mW typical active power making it suitable for high-density 5G massive MIMO applications. Also, the device is available in a space saving 2 mm x 2 mm, 12-pin QFN package. The device is rated for an operating temperature of up to 105°C to provide a robust system design. There is a 1.8-V JEDEC compliant power down pin available for fast power down and power up of the device suitable for time division duplex (TDD) systems.

LMH9135 are high-performance, single-channel, differential input to single-ended output transmit radio frequency (RF) gain block amplifiers that support 3.2 – 4.2 GHz frequency band. The device can support the requirements for next generation 5G active antenna systems (AAS) or small-cell applications while driving the input of a power amplifier (PA). The RF amplifier provides 18 dB typical gain with good linearity performance of +31.5 dBm Output IP3, while maintaining less than 4 dB noise figure across the whole 1 dB bandwidth. The device is internally matched for 100-Ω differential input impedance providing easy interface with an RF-sampling or Zero-IF analog front-end (AFE) at the input. Also, the device is internally matched for 50-Ω single-ended output impedance that is required to easily interface with a post-amplifier, surface acoustic wave (SAW) filter, or power amplifier (PA).

Operating on a single 3.3 V supply, the device consumes about 395 mW typical active power making it suitable for high-density 5G massive MIMO applications. Also, the device is available in a space saving 2 mm x 2 mm, 12-pin QFN package. The device is rated for an operating temperature of up to 105°C to provide a robust system design. There is a 1.8-V JEDEC compliant power down pin available for fast power down and power up of the device suitable for time division duplex (TDD) systems.

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기술 자료

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3개 모두 보기
유형 직함 날짜
* Data sheet LMH9135 3.2 – 4.2 GHz Differential to Single-Ended Amplifier with Integrated Balun datasheet PDF | HTML 2020/08/21
Certificate LMH9135RRLEVM EU Declaration of Conformity (DoC) 2020/05/15
EVM User's guide LMH9135 Evaluation Module User's Guide PDF | HTML 2020/04/02

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

평가 보드

AFE79-LMH9-EVM — 액티브 발룬 LMH9126, LMH9226, LMH9135 및 LMH9235가 포함된 AFE7920 레퍼런스 디자인 평가 보드

The AFE79-LMH9-EVM evaluation module (EVM) is a board for evaluating the performance of the AFE79xx family of integrated RF sampling transceivers interfaced with the LMH9xxx family of active baluns. The AFE79-LMH9-EVM showcases the AFE7920, LMH9126, LMH9226, LMH9135, and LMH9235. The device is (...)
사용 설명서: PDF
평가 보드

LMH9135-EVM — 3.55GHz 차동 입력-단일 종단 출력 증폭기 평가 모듈

The LMH9135 evaluation module (EVM) is used to evaluate the LMH9135 device, which is a differential input to single-ended output 18dB gain block amplifier available in 2x2mm2 12-pin RRL package. The device is well suited to support requirements for the next generation 5G m-MIMO active antenna (...)
사용 설명서: PDF
TI.com에서 구매 불가
소프트웨어 개발 키트(SDK)

PCM-3P-PC802 PCM-3P-PC802 reference design

지원되는 제품 및 하드웨어

지원되는 제품 및 하드웨어

제품
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RF FDA
LMH9135 발룬 기능이 통합된 3.2~4.2GHz 차동-단일 종단 증폭기
RF 트랜시버
AFE7728D 듀얼 피드백 경로와 일체형 CFR/DPD - 200MHz를 지원하는 듀얼 채널 RF 트랜시버 AFE7768D 듀얼 피드백 경로와 일체형 CFR/DPD - 200MHz를 지원하는 4채널 RF 트랜시버 AFE7769D 듀얼 피드백 경로와 일체형 CFR/DPD를 지원하는 쿼드 채널 RF 트랜시버
시뮬레이션 모델

LMH9135 S-parameter Models

SBOMB71.ZIP (15 KB) - S-Parameter Model
패키지 CAD 기호, 풋프린트 및 3D 모델
WQFN (RRL) 12 Ultra Librarian

주문 및 품질

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  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
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  • 팹 위치
  • 조립 위치

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