홈 전원 관리 MOSFET
홈
전원 관리
MOSFET

TPS1101

활성

단일 P-채널 향상 모드 MOSFET

지금 주문
데이터 시트

이 제품의 최신 버전이 있습니다

open-in-new 대안 비교
비교 대상 장치와 유사한 기능
TPS25221 활성 0.275-2.7A 조정 ILIMIT, 2.5-5.5V, 70mΩ USB 전원 스위치, 액티브-하이, 역방향 차단 This product is a single channel adjustable current limit switch.

TPS1101

활성
데이터 시트 지금 주문

제품 상세 정보

Rating Catalog Operating temperature range (°C) to
Rating Catalog Operating temperature range (°C) to
SOIC (D) 8 29.4 mm² 4.9 x 6 TSSOP (PW) 16 32 mm² 5 x 6.4
  • Low rDS(on) . . . 0.09 Typ at VGS = -10 V
  • 3 V Compatible
  • Requires No External VCC
  • TTL and CMOS Compatible Inputs
  • VGS(th) = -1.5 V Max
  • Available in Ultrathin TSSOP Package (PW)
  • ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015

  • Low rDS(on) . . . 0.09 Typ at VGS = -10 V
  • 3 V Compatible
  • Requires No External VCC
  • TTL and CMOS Compatible Inputs
  • VGS(th) = -1.5 V Max
  • Available in Ultrathin TSSOP Package (PW)
  • ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015

The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of the Texas Instruments LinBiCMOSTM

process. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1101 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on) and excellent ac characteristics (rise time 5.5 ns typical) of the TPS1101 make it the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers.

The ultrathin thin shrink small-outline package or TSSOP (PW) version fits in height-restricted places where other P-channel MOSFETs cannot. The size advantage is especially important where board height restrictions do not allow for an small-outline integrated circuit (SOIC) package. Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other P-channel MOSFETs in SOIC packages.

The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of the Texas Instruments LinBiCMOSTM

process. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1101 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on) and excellent ac characteristics (rise time 5.5 ns typical) of the TPS1101 make it the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers.

The ultrathin thin shrink small-outline package or TSSOP (PW) version fits in height-restricted places where other P-channel MOSFETs cannot. The size advantage is especially important where board height restrictions do not allow for an small-outline integrated circuit (SOIC) package. Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other P-channel MOSFETs in SOIC packages.
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기술 자료

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유형 직함 날짜
* Data sheet Single P-Channel Enhancement-Mode MOSFETs datasheet (Rev. C) 1995/08/01

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

지원 및 교육

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