TPS51116
- Synchronous Buck Controller (VDDQ)
- Wide-Input Voltage Range: 3.0-V to 28-V
- D−CAP™ Mode with 100-ns Load Step Response
- Current Mode Option Supports Ceramic Output Capacitors
- Supports Soft-Off in S4/S5 States
- Current Sensing from RDS(on) or Resistor
- 2.5-V (DDR), 1.8-V (DDR2), Adjustable to
1.5-V (DDR3), 1.35-V (DDR3L), 1.2-V (LPDDR3 and DDR4) or
Output Range 0.75-V to 3.0-V - Equipped with Powergood, Overvoltage Protection and Undervoltage Protection
- 3-A LDO (VTT), Buffered Reference (VREF)
- Capable to Sink and Source 3 A
- LDO Input Available to Optimize Power Losses
- Requires only 20-µF Ceramic Output Capacitor
- Buffered Low Noise 10-mA VREF Output
- Accuracy ±20 mV for both VREF and VTT
- Supports High-Z in S3 and Soft-Off in S4/S5
- Thermal Shutdown
The TPS51116 provides a complete power supply for DDR/SSTL-2, DDR2/SSTL-18, DDR3/SSTL-15, DDR3L, LPDDR3 and DDR4 memory systems. It integrates a synchronous buck controller with a 3-A sink/source tracking linear regulator and buffered low noise reference. The device offers the lowest total solution cost in systems where space is at a premium. The synchronous controller runs fixed 400-kHz, pseudo-constant frequency PWM with an adaptive on-time control that can be configured in D-CAP™ Mode for ease of use and fastest transient response or in current mode to support ceramic output capacitors. The 3-A sink/source LDO maintains fast transient response only requiring 20-µF (2 × 10 µF) of ceramic output capacitance. In addition, the LDO supply input is available externally to significantly reduce the total power losses. The device supports all of the sleep state controls placing VTT at high-Z in S3 (suspend to RAM) and discharging VDDQ, VTT and VTTREF (soft-off) in S4/S5 (suspend to disk). The device has all of the protection features including thermal shutdown and is offered in both a 20-pin HTSSOP PowerPAD™ package and 24-pin 4 × 4 QFN.
기술 자료
설계 및 개발
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TPS51116EVM-001 — TPS51116 메모리 전원 솔루션, 동기 벅 컨트롤러 평가 모듈
The TPS51116EVM evaluation module (EVM) is a dual-output converter for DDR and DDRII memory modules. It uses a 10 A synchronous buck converter to provide the core voltage (VDDQ) for DDR memory modules. The EVM is designed to use a 4.5 V to 28 V supply voltage and a 4.75 V to (...)
TPS51116 TINA-TI Transient Reference Design
패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
---|---|---|
HTSSOP (PWP) | 20 | Ultra Librarian |
VQFN (RGE) | 24 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치
권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.