LM5110
- Independently Drives Two N-Channel MOSFETs
- Compound CMOS and Bipolar Outputs Reduce Output Current Variation
- 5A sink/3A Source Current Capability
- Two Channels can be Connected in Parallel to Double the Drive Current
- Independent Inputs (TTL Compatible)
- Fast Propagation Times (25-ns Typical)
- Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load)
- Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation
- Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground
- Available in Dual Noninverting, Dual Inverting and Combination Configurations
- Shutdown Input Provides Low Power Mode
- Supply Rail Undervoltage Lockout Protection
- Pin-Out Compatible With Industry Standard Gate Drivers
- Packages:
- SOIC-8
- WSON-10 (4 mm × 4 mm)
The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.
기술 자료
| 유형 | 직함 | 날짜 | ||
|---|---|---|---|---|
| * | Data sheet | LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability datasheet (Rev. B) | PDF | HTML | 2012/11/05 |
| Application note | Why use a Gate Drive Transformer? | PDF | HTML | 2024/03/04 | |
| Application note | Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs | PDF | HTML | 2024/01/22 | |
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020/02/28 | ||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020/02/28 | ||
| Application brief | How to overcome negative voltage transients on low-side gate drivers' inputs | 2019/01/18 | ||
| More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018/10/29 | ||
| Selection guide | Power Management Guide 2018 (Rev. R) | 2018/06/25 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
UCC27423-4-5-Q1EVM — UCC2742xQ1 활성화를 지원하는 듀얼 4A 고속 저압측 MOSFET 드라이버 평가 모듈(EVM)
LM5110-1M TINA-TI Transient Reference Design
LM5110-2M TINA-TI Transient Reference Design
LM5110-3M TINA-TI Transient Reference Design
PSPICE-FOR-TI — TI 설계 및 시뮬레이션 툴용 PSpice®
TI 설계 및 시뮬레이션 환경용 PSpice는 기본 제공 라이브러리를 이용해 복잡한 혼합 신호 설계를 시뮬레이션할 수 있습니다. 레이아웃 및 제작에 (...)
| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| SOIC (D) | 8 | Ultra Librarian |
| WSON (DPR) | 10 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치
권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.